單晶碳化矽(SiC)晶圓是眾所矚目的第三代半導體材料之一，其低漏電流特性、較高的熱傳導率、寬能隙(WBG)和耐化學性，廣泛應用於高功率及高電壓能量轉換裝置元件，然而碳化矽的硬度和脆性使其鑽石線鋸切割技術面臨挑戰。本研究研發選擇性電泳沉積反應式冷卻液(Selective Electrophoretic Deposition, SEPD)輔助製程於複線式鑽石線鋸機進行切割單晶碳化矽晶錠，以線速度10 m/s，進給速度0.1 mm/min，線張力25 N，5度搖擺模式，直徑150 μm含鑽石顆粒的電鍍鑽石線將其切割成片厚200 μm的晶圓。反應式冷卻液添加四氧化三鐵(Fe3O4)、過氧化氫(H2O2)、TMC、DP0500和冷卻液(#787)作為輔助溶液。透過X射線電子能譜儀(XPS)了解化學反應對碳化矽晶圓的影響，使用綠光干涉儀(CCI)測量晶片的表面粗糙度。透過選擇性電泳沉積的效果，鑽石線可吸附四氧化三鐵反應磨料，且避免碳化矽切屑附著，以減少切屑對晶片表面的刮削。實驗總結與傳統製程相比，選擇性電泳沉積反應式冷卻液有效輔助線鋸製程，提高了材料去除率並改善晶圓表面粗糙度23.33%，由雙束型聚焦離子束顯微鏡(FIB)測試，平均次表層破壞減少了58.54%。

Single crystal silicon carbide (SiC) wafer is one of the promising third-generation semiconductor materials. It is vital for high power and high voltage energy conversion devices due to its low current leakage characteristics, higher temperature conductivity, wide bandgap (WBG), and chemical resistance. However, its hardness and brittleness make it difficult to slice wafers using diamond wire sawing technology. In this study, a selective electrophoretic deposition (SEPD) with chemical reaction is developed for sawing a 4" N-type single crystal SiC in wire sawing process. The ingot is sliced into 200 μm thickness using Ni-based electroplated diamond wire with 150 μm diameter and 11.77 μm average diamond abrasive size. The wire speed of 10 m/s, feed rate of 0.1 mm/min, wire tension of 25 N, and a rocking mode of 5˚ are selected as process parameters. Besides, different types of chemicals, iron tetroxide (Fe3O4), hydrogen peroxide (H2O2), TMC, DP-0500, and #787 oil are used as a coolant. In addition, the effect of the chemical reaction is examined by X-ray photoelectron spectroscopy (XPS), and the surface topography of the wafer is measured by coherent confocal interferometry (CCI). The result indicated that, through selective electrophoretic deposition, diamond wire could only adsorb the ferric tetroxide reactive abrasive, avoiding the adsorption of silicon carbide chips, reducing the scraping of the wafer surface by chips. Chemical reaction assisted by SEPD decreased surface roughness by 23.33%. And decreased the subsurface damage (SSD) by 58.54% measured by focus ion beam microscope (FIB), respectively compared to the traditional wire sawing process.

[1] "Application Benefits of Using 4th Generation SiC MOSFETs", ROHM, February 2022.
[2] Akagi, Hirofumi. "The next‐generation medium‐voltage power conversion systems." Journal of the Chinese Institute of Engineers 30.7 (2007): 1117-1135.
[3] "Power Electronics for E-Mobility 2021", Yole Développement, February 2021.
[4] 張士宸，"氣液輔助化學機械拋光應用於單晶碳化矽基板之平坦化製程分析研究"，國立台灣科技大學，機械工程研究所碩士論文，2016。
[5] 楊竣凱，"複合式能量化學機械拋光於單晶碳化矽基板平坦化製程之研究"，國立台灣科技大學，機械工程研究所碩士論文，2014。
[6] 陳鼎鈞，"單晶碳化矽基板之鑽石研光與化學機械拋光平坦化製程研究"，國立台灣科技大學，機械工程研究所碩士論文，2015。
[7] Lin, Shenghuang, and Zhiming Chen. "Effect of growth gas flow rate on the SiC crystal resistivity." Journal of Materials Research 28.1 (2013): 23-27.
[8] Carter, C. Barry, and M. Grant Norton. Ceramic materials: science and engineering. Vol. 716. New York: springer, 2007.
[9] 陳冠諭，"選擇性電泳沉積之反應式輔助複線式鑽石線鋸於單晶矽晶圓加工研究"，國立台灣科技大學，機械工程研究所碩士論文，2021。
[10] Chen, Chao Chang Arthur, and Pei Hsiun Chao. "Surface texture analysis of fixed and free abrasive machining of silicon substrates for solar cells." Advanced Materials Research. Vol. 126. Trans Tech Publications Ltd, 2010.
[11] 林鼎將，"矽基板線鋸加工之表面形貌分析研究"，國立台灣科技大學，機械工程研究所碩士論文，2013。
[12] 詹明賢，"單晶與多晶矽基板鑽石線鋸加工之切屑分析研究"，國立台灣科技大學，機械工程研究所碩士論文，2014。
[13] 黃浩維，"單晶碳化矽晶圓之鑽石線鋸加工模式分析研究"，國立台灣科技大學，機械工程研究所碩士論文，2015。
[14] Ge, Mengran, et al. "Investigation on critical crack-free cutting depth for single crystal silicon slicing with fixed abrasive wire saw based on the scratching machining experiments." Materials Science in Semiconductor Processing 74 (2018): 261-266.
[15] Costa, Erick Cardoso, et al. "Effect of cutting parameters on surface integrity of monocrystalline silicon sawn with an endless diamond wire saw." Solar Energy 207 (2020): 640-650.
[16] Wang, Liyuan, et al. "Analytical prediction of subsurface microcrack damage depth in diamond wire sawing silicon crystal." Materials Science in Semiconductor Processing 112 (2020): 105015.
[17] 黃堯弘，"電泳沉積輔助線鋸切割於矽基板加工之永續性分析之研究"，國立台灣科技大學，機械工程研究所碩士論文，2012。
[18] 陳冠霖，"電泳反應式鑽石線鋸製程應用於太陽能矽基板加工之研究"，國立台灣科技大學，機械工程研究所碩士論文，2015。
[19] 李奕德，"複線式電泳反應式鑽石線鋸加工製程於單晶氧化鋁基板之研究"，國立台灣科技大學，機械工程研究所碩士論文，2018。
[20] Yin, Tao, et al. "Processing properties of strong oxidizing slurry and effect of processing atmosphere in SiC-CMP." ICPT 2012-International Conference on Planarization/CMP Technology. VDE, 2012.
[21] Ohnishi, Osamu, et al. "Effects of atmosphere and ultraviolet light irradiation on chemical mechanical polishing characteristics of SiC wafers." Japanese Journal of Applied Physics 51.5S (2012): 05EF05.
[22] Deng, H., and K. Yamamura. "Atomic-scale flattening mechanism of 4H-SiC (0 0 0 1) in plasma assisted polishing." CIRP Annals 62.1 (2013): 575-578.
[23] Deng, Hui, et al. "Electro-chemical mechanical polishing of single-crystal SiC using CeO2 slurry." Electrochemistry Communications 52 (2015): 5-8.
[24] 蕭祈暐，"過錳酸鉀溶液輔助複線式鑽石線鋸於單晶碳化矽晶圓加工影響之研究"，國立台灣科技大學，機械工程研究所碩士論文，2017。
[25] Lu, Jiabin, et al. "The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction." Precision Engineering 52 (2018): 221-226.
[26] 林妤靜，"氧化石墨烯複合式拋光液於單晶碳化矽晶圓之化學機械拋光製程分析研究"，國立台灣科技大學，機械工程研究所碩士論文，2019。
[27] 林鴻良，"Sapphire screen processing technique"，大 陸 專 利CN103895114A，2014。
[28] 盧建偉，"一種單晶矽棒截斷機及單晶矽棒截斷方法"大陸專利 CN105196433A，2015。
[29] Hanbo ZHU, "Wire sawing machine", United States Patent, Number: 0184908 A1, 2016.
[30] 陳正昌，"線鋸製程用線材之複捲機研製"，國立台灣科技大學，機械工程研究所碩士論文，2017。
[31] Wang, Xuehan, et al. "Accelerated C-face polishing of silicon carbide by alkaline polishing slurries with Fe3O4 catalysts." Journal of Environmental Chemical Engineering 9.6 (2021): 106863.
[32] Deng, Jiayun, et al. "The mechanism of Fenton reaction of hydrogen peroxide with single crystal 6H-SiC substrate." Surfaces and Interfaces 21 (2020): 100730.
[33] Moreira, Francisca C., et al. "Electrochemical advanced oxidation processes: a review on their application to synthetic and real wastewaters." Applied Catalysis B: Environmental 202 (2017): 217-261.
[34] Sun, Jing, and Lian Gao. "Dispersing SiC powder and improving its rheological behaviour." Journal of the European ceramic society 21.13 (2001): 2447-2451.
[35] Zhang, J. X., et al. "Aqueous processing of SiC green sheets I: Dispersant." Journal of materials research 17.8 (2002): 2012-2018.
[36] Zhang, Jingxian, et al. "Effect of citric acid on the adsorption behavior of polyethylene imine (PEI) and the relevant stability of SiC slurries." Colloids and Surfaces A: Physicochemical and Engineering Aspects 276.1-3 (2006): 168-175.
[37] 許仙薇，"搖擺運動於單晶氧化鋁基板鑽石線切割影響之研究"，國立台灣科技大學，機械工程研究所碩士論文，2013。
[38] "SILICON CARBIDE (SiC) SUBSTRATES ", II-VI Incorporated, 2022.