半導體晶圓製造往往會遇到品質提升與成本降低的挑戰，晶片通過一系列的製造處理，包括晶體生長，切片，壓扁和清潔，線鋸加工是應用於晶片基板製造的主要切片工具。游離磨料線鋸加工為起先在半導體行業中使用之切片工具。然而固定磨料線鋸加工有取代游離磨料線鋸加工的趨勢，原因在於高的切削效率以及鋸切硬脆材料的能力，線鋸加工是一項極為昂貴的製程，約佔掉晶圓製造成本的30%以上，因此線鋸加工影響到晶圓基板的品質以及價格， 一個良好的的模型可幫助改善晶圓製造過程的品質以及容量，在本篇論文中提出利用數學方法進行對固定磨料鑽石線鋸的研究，利用電腦模擬固定磨料線鋸在實際切削的鋸切情形，以克服線鋸切割不易以傳統的實驗方法進行深入研究之困難點，研究結果表示此線鋸模型成功地以隨機的線參數像是磨料大小及磨料在線材上的位置建立鍍鑽石線模型，而晶圓的表面形貌可透過線材與工件間的相對運動模擬，並且以實驗結果驗證模擬分析結果，確認此方法的有效性。再以此模型進行鑽石線及製程參數研究，以了解對於切片晶圓表面品質的影響。本文也對於線鋸上單顆磨料的切削深度進行探討，結果驗證了固定磨料線鋸加工主要是利用脆性磨壞的磨削加工方式進行材料移除。此外，提出減少每個磨粒的切削深度的對策以利於減少次表面損傷層以及提高表面品質。

Semiconductor wafer manufacturing always faces the urgent challenges of quality improvement and cost reduction. Wafers are produced through a series of processes including crystal growth, slicing, flattening and cleaning. Wire saw is the main slicing tool in wafer substrate manufacturing. Slurry wire saw was first employed in the semiconductor industry. However, fixed diamond wire saw is replacing slurry wire saw because of its efficiency and ability to slice very hard materials. Wire sawing is a costly process which can cost up to 30% of the total silicon wafer production cost. Therefore, wire sawing affects the quality and price of wafer substrates. A good physical understanding and detailed models are required to improve wafer quality and increase capacity of wafer manufacturing processes. In this thesis, numerical approach to investigate the fixed diamond wire sawing is proposed. The study utilized computer simulation as a tool to simulate actual slicing process which is difficult to investigate in deep by experimental methods. The tool model successfully represents the surface of diamond coated wire with the wire parameters including random characteristics such as abrasive sizes and abrasive positions on the wire surface. The sliced wafer surface morphology is modeled by mapping the wire surface profile into the workpiece. The comparison between simulation output and experimental data verifies the model. Based on the validation of the approach, parametric study will be carried out to understand the effects of abrasive and process parameters to the quality of sliced wafer surface. The depth of cut per individual abrasive during wire sawing is also investigated in this thesis. The results again affirm that the material removal in wire sawing is mainly contributed by brittle fracture. In addition, the strategies to decrease the depth of cut per abrasive by which the surface and subsurface damages can be reduced are discussed.

[1] 2011, "International Technology Roadmap of Standard of Semiconductors 2011 edition," http://www.itrs.net/.
[2] Erk, H. F., 2009, "Challenges in wafering processes for semiconductor and solar wafers," Proc. China Semiconductor Technology International Conference, Electrochemical Society, pp. 969-981.
[3] Moller, H. J., 2004, "Basic mechanisms and models of multi-wire sawing," Advanced Engineering Materials, 6(7), pp. 501-513.
[4] Moller, H. J., 2006, "Wafering of silicon crystals," Physica Status Solid, 203(4), pp. 659-669.
[5] Brun, X. F., and Melkote, S. N., 2009, "Analysis of stresses and breakage of crystalline silicon wafers during handling and transport," Solar Energy Materials and Solar Cells, 93(8), pp. 1238-1247.
[6] Watanabe, M., and Kramer, S., 2006, "450 mm Silicon: An opportunity and wafer scaling," Electrochemical Society Interface, 15(4), pp. 28-31.
[7] Pettinato, J. S., and Pillai, D., 2005, "Technology decisions to minimize 450-mm wafer size transition risk," Semiconductor Manufacturing, IEEE Transactions on, 18(4), pp. 501-509.
[8] Pauli, P., 2005, "Swiss wafer slicing technology for the global PV market from Meyer + Burger AG-Novel Trends for the future in photovoltaic wafer manufacturing," Proc. 6th Symposium Photovoltaique National.
[9] Li, J., Kao, I., and Prasad, V., 1998, "Modeling Stresses of Contacts in Wire Saw Slicing of Polycrystalline and Crystalline Ingots: Application to Silicon Wafer Production," Journal of Electronic Packaging, 120(2), pp. 123-128.
[10] Liedke, T., and Kuna, M., 2011, "A macroscopic mechanical model of the wire sawing process," International Journal of Machine Tools and Manufacture, 51(9), pp. 711-720.
[11] Liedke, T., and Kuna, M., 2013, "Discrete element simulation of micromechanical removal processes during wire sawing," Wear, 304(1-2), pp. 77-82.
[12] Nassauer, B., Hess, A., and Kuna, M., 2014, "Numerical and experimental investigations of micromechanical processes during wire sawing," International Journal of Solids and Structures, 51(14), pp. 2656-2665.
[13] Wu, H., and Melkote, S. N., 2008, "Study of Ductile-to-Brittle Transition in Single Grit Diamond Scribing of Silicon: Application to Wire Sawing of Silicon Wafers," Journal of Engineering Materials and Technology, 134(4), pp. 1-8.
[14] Gao, Y., and Ge, P., 2011, "Relationship between the grit cut depth and process parameters in electroplated diamond wire sawing KDP crystal," Proc. International Conference on Engineering Design and Optimization, Trans Tech Publications, pp. 950-953.
[15] Chung, C., 2012, "Abrasive distribution of the fixed diamond wire in wire sawing process," Advanced Materials Research, 579, pp. 145-152.
[16] Teomete, E., 2011, "Roughness damage evolution due to wire saw process," International Journal of Precision Engineering and Manufacturing, 12(6), pp. 941-947.
[17] Teomete, E., 2011, "Investigation of long waviness induced by the wire saw process," Proc. of the Institution of Mechanical Engineers, Part B: Journal of Engineering Manufacture, SAGE Publications Ltd, pp. 1153-1162.
[18] Wu, H., Melkote, S. N., and Danyluk, S., 2012, "Mechanical Strength of Silicon Wafers Cut by Loose Abrasive Slurry and Fixed Abrasive Diamond Wire Sawing," Advanced Engineering Materials, 14(5), pp. 342-348.
[19] Chen, C.-C. A., and Chao, P.-H., 2010, "Surface texture analysis of fixed and free abrasive machining of silicon substrates for solar cells," Proc. 13th International Symposium on Advances in Abrasive Technology, Trans Tech Publications, pp. 177-180.
[20] Wu, H., Yang, C., and Melkote, S. N., 2014, "Effect of reciprocating wire slurry sawing on surface quality and mechanical strength of as-cut solar silicon wafers," Precision Engineering, 38(1), pp. 121-126.
[21] Nguyen, T. A., and Butler, D. L., 2005, "Simulation of precision grinding process, part 1: generation of the grinding wheel surface," International Journal of Machine Tools and Manufacture, 45(11), pp. 1321-1328.
[22] Sakakura, M., Tsukamoto, S., Fujiwara, T., Inasaki, I., Pham, D. T., Eldukhri, E. E., and Soroka, A. J., 2006, "Visual Simulation of Grinding Process," Intelligent Production Machines and Systems, Elsevier Science Ltd, Oxford, pp. 107-112.
[23] Nguyen, T. A., and Butler, D. L., 2005, "Simulation of surface grinding process, Part 2: Interaction of the abrasive grain with the workpiece," International Journal of Machine Tools and Manufacture, 45(11), pp. 1329-1336.
[24] Zhou, X., and Xi, F., 2002, "Modeling and predicting surface roughness of the grinding process," International Journal of Machine Tools and Manufacture, 42(8), pp. 969-977.
[25] Chen, X., and Brian Rowe, W., 1996, "Analysis and simulation of the grinding process. Part II: Mechanics of grinding," International Journal of Machine Tools and Manufacture, 36(8), pp. 883-896.
[26] Chen, X., and Rowe, W. B., 1996, "Analysis and simulation of the grinding process. Part I: Generation of the grinding wheel surface," International Journal of Machine Tools and Manufacture, 36(8), pp. 871-882.
[27] Chen, X., Rowe, W. B., Mills, B., and Allanson, D. R., 1996, "Analysis and simulation of the grinding process. Part III: Comparison with experiment," International Journal of Machine Tools and Manufacture, 36(8), pp. 897-906.
[28] Chen, X., Rowe, W. B., Mills, B., and Allanson, D. R., 1998, "Analysis and simulation of the grinding process. Part IV: Effects of wheel wear," International Journal of Machine Tools and Manufacture, 38(12), pp. 41-49.
[29] Chung, C., and Nhat, L. V., 2013, "Surface generation of diamond coated wire for wire sawing process," Proc. Proceedings of 16th International Conference on Advances in Materials and Processing Technologies, AMPT.
[30] Chung, C., and Nhat, L. V., 2014, "Generation of Diamond Wire Sliced Wafer Surface based on the Distribution of Diamond Grits," International Journal of Precision Engineering and Manufacturing, 1(5), pp. 789-796.
[31] Davis, K. E., "Semiconductor industry transition to 450 mm," Proc. SME Technical Papers - 1st Quarter 2013, Society of Manufacturing Engineers.
[32] Venkatesh, V. C., and Izman, S., 2007, "Development of a novel binderless diamond grinding wheel for machining IC chips for failure analysis," Journal of Materials Processing Technology, 185(13), pp. 31-37.
[33] Chiba, Y., Tani, Y., Enomoto, T., and Sato, H., 2003, "Development of a high-speed manufacturing method for electroplated diamond wire tools," CIRP Annals - Manufacturing Technology, 52(1), pp. 281-284.
[34] De Pellegrin, D. V., Corbin, N. D., Baldoni, G., and Torrance, A. A., 2009, "Diamond particle shape: Its measurement and influence in abrasive wear," Tribology International, 42(1), pp. 160-168.
[35] Bidiville, A., Wasmer, K., Michler, J., Nasch, P. M., Van Der Meer, M., and Ballif, C., 2008, "Mechanisms of wafer sawing and impact on wafer properties," Progress in Photovoltaics: Research and Applications, 18(8), pp. 563-572.
[36] Chi, Y., and Li, H., 2013, "Simulation and analysis of grinding wheel based on Gaussian mixture model," Frontiers of Mechanical Engineering, 7(4), pp. 427-432.
[37] Koshy, P., Jain, V. K., and Lal, G. K., 1997, "Stochastic simulation approach to modelling diamond wheel topography," International Journal of Machine Tools and Manufacture, 37(6), pp. 751-761.
[38] Gong, Y. D., Wang, B., and Wang, W. S., 2002, "The simulation of grinding wheels and ground surface roughness based on virtual reality technology," Journal of Materials Processing Technology, 129(13), pp. 123-126.
[39] Moore, M. A., and King, F. S., 1980, "Abrasive wear of brittle solids," Wear, 60(1), pp. 123-140.
[40] Gao, Y., Ge, P., and Hou, Z., 2008, "Study on removal mechanism of fixed-abrasive diamond wire saw slicing monocrystalline silicon," Key Engineering Materials, Trans Tech Publications Ltd, pp. 450-454.
[41] Teomete, E., 2011, "Effect of process parameters on surface quality for wire saw cutting of alumina ceramic," Gazi University Journal of Science, 24(2), pp. 291-297.
[42] Gao, Y., Ge, P., and Li, S., 2009, "Investigation of subsurface damage depth of single crystal silicon in electroplated wire saw slicing," Proc. 15th Conference on Abrasive Technology in China: Advances in grinding and abrasive technology, Trans Tech Publications Ltd, pp. 306-310.
[43] Meng, J. F., Li, J. F., Ge, P. Q., and Gao, W., 2004, "Removal mechanism in wire-sawing of hard-brittle material," Proc. 11th International Manufacturing Conference - Advances in Materials Manufacturing Science and Technology, Trans Tech Publications Ltd, pp. 192-195.
[44] Shimada, S., Ikawa, N., Inamura, T., Takezawa, N., Ohmori, H., and Sata, T., 1995, "Brittle-Ductile Transition Phenomena in Microindentation and Micromachining," CIRP Annals - Manufacturing Technology, 44(1), pp. 523-526.
[45] Bifano, T. G., Dow, T. A., and Scattergood, R. O., 1991, "Ductile-regime grinding. A new technology for machining brittle materials," Journal of engineering for industry, 113(2), pp. 184-189.
[46] Arif, M., Xinquan, Z., Rahman, M., and Kumar, S., 2013, "A predictive model of the critical undeformed chip thickness for ductile–brittle transition in nano-machining of brittle materials," International Journal of Machine Tools and Manufacture, 64(0), pp. 114-122.
[47] Wang, J.-J. J., and Liao, Y.-Y., 2007, "Critical Depth of Cut and Specific Cutting Energy of a Microscribing Process for Hard and Brittle Materials," Journal of Engineering Materials and Technology, 130(1), pp. 011002-011002.
[48] Marshall, D. B., Lawn, B. R., and Evans, A. G., 1982, "Elastic/plastic indentation damage in ceramics: The lateral crack system," Journal of the American Ceramic Society, 65(11), pp. 561-566.
[49] Evans, A. G., Gulden, M. E., and Rosenblatt, M., 1978, "Impact damage in brittle materials in the elastic-plastic response regime," Proceedings of the Royal Society A, 361(1706), pp. 343-365.
[50] Lee, J. H., Gao, Y. F., Johanns, K. E., and Pharr, G. M., 2012, "Cohesive interface simulations of indentation cracking as a fracture toughness measurement method for brittle materials," Acta Materialia, 60(15), pp. 5448-5467.
[51] Bhagavat, S., and Kao, I., 2007, "Ultra-low load multiple indentation response of materials: In purview of wiresaw slicing and other free abrasive machining (FAM) processes," International Journal of Machine Tools and Manufacture, 47(3-4), pp. 666-672.