目前太陽能電池製程前端所使用之結晶矽基板，主要以複線式線鋸加工技術(Multi Wire Sawing)進行矽晶錠切片(Slicing)，其中游離磨料線鋸受到切割高硬脆材料效率不佳、漿料會對環境汙染、清理作業繁複等影響，近期改良之固定磨料線鋸加工，又稱鑽石線線鋸加工，可改善許多先前切割技術缺點，已是晶圓基板切片產業發展趨勢。本研究主要目的為探討固定磨料線鋸製程參數對於結晶矽材料所產生之矽切屑情況，再藉由比切削能計算，建立延、脆性兩種破壞機制評斷方法，同時藉由切屑大小估算與實際觀察作一相互驗證。研究方法為先就切削用鑽石線材表面黏著之鑽石磨料對於單晶矽、多晶矽二種材料之線鋸製程，作一比切削能(Specific Cutting Energy)和材料體積移除量估算。同時，針對固定磨料線鋸之矽切屑作一大小估算。並設定不同製程參數進行實際線鋸試切單晶矽晶錠，觀察矽晶片表面粗糙度和厚度變化，還有相關材料移除率估算，和先前已估算之相關參數值作一實際驗證，並同時進行冷卻液之切屑形貌拍攝做相關硬脆材料加工模式之延性破壞和脆性破壞探討。最後使用改良之磨耗試驗機進行鑽石線與矽晶錠磨耗實驗，針對磨削比做相關計算，作為一鑽石線材品質評估方式。由於多晶鑽石因晶體結構關係，其具有良好的自銳性能力，適合應用在矽晶片線鋸製程的電鍍鑽石線上；本研究對於單晶矽晶錠材料試切，當進給速度為0.01mm/min至0.1mm/min之間，比切削能為0.538至5.385 J/〖mm〗^3，會同時伴有延、脆性破壞產生。當進給速度達到0.3 mm/min以上、比切削能為0.179 J/〖mm〗^3以下時，主要為脆性破壞。本研究所用250μm鑽石線徑線材之鑽石磨料傾角半角平均角度為56.25°，磨料應用於單晶矽(100)之體積移除量估算為3.045×〖10〗^(-7) 〖mm〗^3/顆，多晶矽之體積移除量估算為4.099×〖10〗^(-7) 〖mm〗^3/顆，總材料體積移除率估算與本文實際線鋸之實際移除率相互比較相差約1.9%至2.7%之間。本文總材料移除體積估算模式未來可應用至切割不同大小尺寸硬脆材料上。

Multi-wire sawing process of ingot slicing is important for solar cell industry due to high production efficiency of brittle materials. However, the environmental pollution and complex clean-up operations of slurry wire sawing (SWS) need to be improved. Development of fixed abrasive wire saw or diamond wire sawing (DWS) is a positive trend that can overcome many shortcomings of SWS. This study aims to investigate the parametric effect of silicon chips produced from DWS of mono and polycrystalline silicon materials. This study establishes an efficient method for evaluating ductile and brittle maching mechanisms by calculating the specific cutting energy. It has been verified by comparing the estimating chip size and experimental results of silicon chips from developed model. Research methods focus on the calculating of specific cutting energy and removal volume of material of mono and poly crystalline by DWS. This study sets different process parameters to slice the monocrystalline silicon ingot by DWS to measure surface roughness and thickness variations of silicon wafer, and material removal ratio (MRR) for different process parameters. Meanwhile, this study makes a size estimating and measuring for silicon chips to distinguish the brittle or ductile maching condition. Finally, this study uses a modified wearing test machine of diamond wire and silicon ingot to perform wear experiments for calculating the grinding ratio to justify efficiency of diamond wire. The polycrystalline diamond is suited for electroplated diamond wire because its structure and self-dressing. When silicon ingot by DWS has feed rate at 0.01mm/min with specific cutting energy of 5.385 J/〖mm〗^3, ductile maching can be detected. Feed speed of silicon ingot of DWS sets at 0.3 mm/min with specific cutting energy of 0.179 J/〖mm〗^3, brittle maching can be found. Feed speed of silicon ingot of DWS sets at 0.1 mm/min with specific cutting energy of 0.538 J/〖mm〗^3, ductile maching and brittle maching can be both found. The diamond abrasive edge angle of 250 μm diameter of diamond wire can be found as average of 56.25 degrees. For monocrystalline silicon (100) and polycrystalline silicon, results of removal volume are obtained to 3.045 ×〖10〗^(-7) 〖mm〗^3/pcs and 4.099 ×〖10〗^(-7) 〖mm〗^3/pcs respectively. Different MRR between the estimated model and experimental results can developed in this study is about 1.9% to 2.7%. The reciprocating ratio is important in diamond wire lifetime of DWS. The material removal model extended and applied to slicing hard and brittle substrates of large sizes.

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