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| 研究生： |
楊智安 Chih-An Yang |
|---|---|
| 論文名稱： |
電泳沉積複合式游離磨料線鋸應用於單晶矽晶圓加工之研究 Study on Electrophoresis Deposition with Hybrid Slurry Wire Sawing Process of Single Crystalline Silicon Wafers |
| 指導教授： |
陳炤彰
Chao-Chang A.Chen |
| 口試委員: |
陳炤彰
陳士勛 趙崇禮 陳順同 蔡曜陽 |
| 學位類別： |
碩士 Master |
| 系所名稱： |
工程學院 - 機械工程系 Department of Mechanical Engineering |
| 論文出版年： | 2017 |
| 畢業學年度： | 105 |
| 語文別： | 中文 |
| 論文頁數： | 153 |
| 中文關鍵詞： | 游離磨料加工 、電泳沉積製程 、半導體矽晶圓 、表面粗糙度 、固相化學 |
| 外文關鍵詞： | Free abrasive processing, Electrophoretic deposition process, Semiconductor Silicon Wafer, Surface roughness, Solid phase chemistry |
| 相關次數： | 點閱：251 下載：6 |
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矽晶圓為製造半導體元件的關鍵基礎材料與太陽能製造用的矽基板不同的是，半導體用之矽晶圓經過線切割後，還需要經過蝕刻、拋光之加工，如何有效提供加工效率以及減少後續拋光製程之加工為本研究主要目的。本研究將傳統式游離磨料進行一改良，在原本的比例中添加了反應式磨料，稱為複合式游離磨料製程，以固相化學方式進行加工，碳酸鈣與矽反應物為矽酸鈣，並且在研究中使用拉曼以及EDS確認矽酸鈣之存在，利用電泳沉積製程，提升複合式游離磨料之加工效能，本研究先以實驗用之小機台EPD-WS單線測試機，進行各製程之加工於水刀切割後之晶碇，將切割後之結果進行表面品質分析後，實際應用於商業用機台DWS-150進行切片之結果比較。由實驗結果可得，在表面粗糙度方面，添加碳酸鈣之製程可有效將其表面粗糙度以及次表層損傷深度得到改善，次表層裂縫深度降，低對於線鋸之後相關製程得到一效率上的提升，可供日後游離磨料加工製程之發展。
Silicon wafers are the key materials for fabricating semiconductor components. This study is to improve efficiency of slurry wire sawing (SWS) process by adding reactive abrasives into the slurry. The conventional free abrasive of SWS has been compared with the Reactive SWS using the composite slurry with calcium carbonate abrasives that can induce solid-state chemical reaction (SSCR) with silicon. The reactants has been found as calcium silicate by Raman and EDS inspection. Moreover, an electrophoretic deposition process has been developed to enhance the Reactive SWS process. Use the EPD-WS to slice the substrates and measurement its surface quality. Also some 3" Silicon ingots have been sliced by revised DWS-150 machine with EPD function. From experimental results, adding calcium carbonate can significantly improve materials removal rate (MRR), the surface roughness and also reduce sub-surface crack length. Future study can apply this developed process on high-volume multi-wire sawing of semiconductor Silicon wafers.
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