單晶碳化矽晶圓(Silicon Carbide, SiC)擁有高崩潰電壓、寬能隙及高熱傳導率之材料特性，因此像是電動車等高功率元件市場上有較大的需求，然而單晶碳化矽晶圓具有高硬度與高抗化學之材料性質，使其在製造過程中所花費時間冗長導致成本增加。本研究主要針對單晶4H碳化矽晶圓之化學機械拋光(Chemical Mechanical Polishing, CMP)，並以降低其製程時間為目標進行研究。本研究建構一加入富勒烯之複合式拋光液(Compound Slurry, CS)並結合氣液輔助化學機械拋光(Gas Liquid Assisted Chemical Mechanical Polishing, GLACMP)，此方法為在C60通氧後與氧原子結合並與碳化矽反應形成氧化層，達到提高製程效率的目標。研究方法先針對富勒烯與環糊精結合之水溶液的粒徑大小做研究，結果根據DLS與FESEM發現C60會吸附在膠體二氧化矽的上面。在浸泡實驗的結果中，經由XPS的結果得到碳化矽於浸泡C60/HP-β-CD+O2之水溶液後會生成Si-O鍵結與C-O鍵結，且在奈米壓痕的結果得到硬度從40.91GPa降低至33.57 GPa (17.94%)。應用於兩吋碳化矽晶圓之拋光製程中，CS+GLACMP之材料移除率(460.25 nm/hr)相較於普通CMP之材料移除率(419.48 nm/hr)提升了9.72%， CS+GLACMP之Ra (0.19 nm)與Sa (0.52 nm)相較於普通CMP之Ra (0.42 nm)與Sa (1.21 nm)分別改善了54.76%和57.02%，可有效地改善碳化矽晶圓的拋光效益。

Monocrystalline silicon carbide (SiC) wafer has desirable properties such as high breakdown voltage, wide band gap and high thermal conductivity. It has high potential in high-power device market, such as electrical vehicles. However, high mechanical hardness and strong chemical inertness of SiC wafer make it very difficult to achieve a damage-free and scratch-free surface. This study aims to improve the planarization efficiency to shorten the process time in chemical mechanical polishing (CMP) of C-face 4H-SiC wafer. A compound slurry (CS) with fullerene/2-hydroxypropyl-β-cyclodextrin (C60/HP-β-CD) has been developed and combined with a gas liquid assisted CMP (GLACMP). Results of dipping tests of SiC in slurry, SiC surface can form Si-O bond and C-O bond after immersing in water-soluble fullerene with oxygen solution. Nanoindentation test shows that the hardness decreases to 33.57GPa from 40.91GPa. From the results of SiC CS+GLACMP to compare with the conventional SiC CMP, the material removal rate (MRR) is increased by 9.72% from 419.48 nm/hr to 460.25 nm/hr, and the surface roughness is decreased by 54.76% from Ra 0.42 nm to Ra 0.19 nm. The water-soluble fullerene with oxygen solution can form an easily removed oxide layer to increase polish efficiency. Future study can focus on high efficient of SiC wafer polishing.

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