半導體製程中昂貴複雜及無可取代之製程-化學機械拋光/平坦化(Chemical Mechanical Plolishing/Planarization, CMP)，因具可有效地解決銅導線化及特徵尺寸進入20奈米世代所需之全域平坦化表面，其決定最終元件效能、可靠度及成本，藉由製程改良能得到更快速、零缺陷之晶圓表面之關鍵製程而備受重視。早期電化學機械拋光(Eelectro-CMP, ECMP)，雖可提升移除率，但參數複雜及電化學對奈米級導線有極大不確定性而終止研發。本研發新一代電致動力輔助CMP (Electro-Kinetic Force Chemical Mechanical Plolishing, EKF-CMP)，以電滲流(Electro-osmosis Flow)提升磨粒分佈於拋光墊上之有效拋光。首先研究方法使用COMSOL軟體進行電極參數化模擬與輔助設計，強化電滲流強度及分布均勻性。銅膜晶圓拋光實驗中發現表面粗糙度(Sa)從8.62nm降至7.72nm，銅圖案化晶圓(SEMATECH 854AZ)實驗結果顯示，可減少37.5%所需之Over-Polishing時數，且降低100/100、50/50及10/90之銅導線凹陷(Dishing)為2.84%-9.79%及介電質腐蝕(Erosion)為73.78%-96.14%之程度。本研究創先研究奈米磨粒擾動之現象，未來能針對非金屬基材料，如單晶氧化鋁及碳化矽之硬脆基板平坦化製程，以及二維/三維結構變化之電極改良設計的EKF-CMP探討。

Chemical Mechanical Polishing/Planarization (CMP) has been recognized as an
irreplaceable technology of approaching the IC fabrication with global planarization, solving
the issues of copper metallization and miniaturization of feature size down to 20nm, though
it is expensive and complicated. CMP affects the final efficiency, reliability, and cost of IC
production so that the process has been improved for efficient and defect-free surface
demands. Electrochemical mechanical polishing (ECMP) though gained high removal rate,
unfortunately, it was terminated due to the potential threat to nano-wire devices and
complicated parameters in high volume manufacturing. This study aims to develop a novel
Electro-Kinetic Force assisted CMP (EKF-CMP) to enhance the electro-osmosis flow for
distributing flow on pad asperity to increase the abrasives effectivity. Based on numerical
simulation by a commercial software, COMSOL Multiphysics, of hybrid energy field on
characteristics of EKF-CMP, a novel design of electrode has been developed. Experiments
of EKF-CMP have been performed on Cu-blanket and patterned wafer (SEMATECH 854AZ)
polishing. Results of Cu blanket CMP show that the lower surface roughness have been
observed from Sa 8.62nm to 7.72nm. For Cu patterned wafers CMP, it has achieved in
reducing the total-process time by reducing the over-polishing stage of 37.5% Moreover,
EKF-CMP has also reduced dishing as 2.84%-9.79%, and erosion as 73.78%-96.14% on
100/100, 50/50, and 10/90 pattern. Finally, the EKF-CMP can significantly control not only
slurry circulation to enhance removal rate of copper film, but also to reduce the degrees of
dishing and erosion on the test key patterns. Future study can focus on non-metallic substrate,
such as sapphire and SiC wafers. The electrode design can also be developed for 2D and 3D
FinFET CMP for advanced node applications.

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