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研究生： Mai Phuoc Trai
MAI PHUOC TRAI
論文名稱： 電致動力輔助化學機械拋光製程中 有效粒子之動能研究
Study on Kinetic Energy of Effective Particle for EKF-CMP Process
指導教授： 陳炤彰
Chao-Chang A. Chen
呂立鑫
Li-Shin Lu
口試委員: 楊宏智
Hong-Tsu Young
徐文祥
Wen-Syang Hsu
趙崇禮
Chong-li Zhao
劉顯光
Hsien-Kuang Liu
呂立鑫
Li-Shin Lu
田維欣
Wei-Hsin Tien
陳炤彰
Chao-Chang A. Chen
學位類別： 博士
Doctor
系所名稱： 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年： 2022
畢業學年度： 110
語文別： 英文
論文頁數： 193
中文關鍵詞： 電致動力輔助化學機械拋光 、有效粒子分析 、粒子動能 、材料移除率 、表面粗糙度 、非均勻度
外文關鍵詞： EKF-CMP, Effective particle analysis, Particle kinetic energy, Material removal rate, Surface roughness, Non-uniformity.
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    • 在半導體積體電路製程中，局部拋光液膜中奈米粒子磨粒之動能在化學機械拋光過程中扮演重要角色。本研究使用電致動力技術 (Electro-Kinetic Force, EKF)配合高精密拋光機，利用電雙層理論所產生之電滲流 (Electro-Osmosis Flow, EOF)效應來提升磨粒的拋光效能。本研究以COMSOL Multi-physics® 商用模擬軟體建立三維模型，模擬磨粒在EOF的驅使下，在有/無溝槽的聚氨酯拋光墊上的運動軌跡。藉由粒子圖像測速法 (Particle Image Velocimetry, PIV)，測得實驗中粒子的速度場，並與各種模擬條件下的EOF模擬結果進行比較。當電極的電壓上升，有助於提升有效磨粒的總數；但隨電極間距以及拋光墊厚度的增加，則會使有效磨粒的總數下降。模擬結果顯示，粒子動能(Particle Kinetic Energy, PKE) 的大小，在接近晶圓表面的磨粒由於交互作用的緣故，PKE被消耗而顯得較低；反之PKE則較高。由磨粒的平移動能(Translational Kinetic Energy, TKE) 以及轉動動能 (Rotational Kinetic Energy, RKE) 的結果得知，磨粒的平移速度大於自旋(角)速度，因此TKE顯得比RKE數值來得大。另外，由於局部拋光液中的磨粒Zeta電位分布不均，使得每一層拋光液及溝槽內的磨粒之TKE及RKE皆不均勻。接觸於晶圓表面的磨粒總動能，會隨著施加的相對速度以及電壓的升高而增強，並在電極間隙為 2 mm時達最佳值。最後，電致動力輔助化學機械拋光 (EKF-CMP) 與製程參數最佳化後，在銅膜晶圓及玻璃基板的拋光研究中，材料移除率、非均勻性及表面粗糙度上都得到顯著性提升。本研究結果能有效地推廣至現今半導體製造產業，並對未來EKF-CMP製程技術的改進和優化做出貢獻。

    Abrasive particle kinetic energy in local slurry film of chemical-mechanical planarization (CMP) process plays a significant role in polishing integrated circuits (IC) in semiconductor manufacturing. In this dissertation, electro-kinetic force (EKF) technique has been applied for high-precision polishing tool by electro-osmosis flow (EOF) phenomena as theoretical electric double layer for improving the polishing performance. A novel three-dimensional (3D) model of EOF for both non-groove and groove geometry of polyurethane pad has been developed for simulating the particle-slurry motion by COMSOL Multi-physics® software. EOF magnitude under various simulation conditions have been compared with both experimental and theoretical results by velocity fields of particle image velocimetry technique. Total number of effective particles intensifies significantly with increasing electrode voltage, but decreases in both cases as raising electrode gap and larger pad thickness. Analysis results for particle kinetic energy (PKE) have indicated that the PKE value at the top layer is smaller compared to that at the bottom layer due to dissipating PKE in the interactions between abrasive nanoparticles and wafer surface. Results of translational and rotational kinetic energy (TKE & RKE) of abrasive particle have shown that RKE value of particle is smaller than TKE because translational velocity’s particle is larger than its angular velocity in inertial motion. Both TKE and RKE of particles in each layer of local slurry film and groove is non-uniformity due to the zeta potential distribution in the local slurry is non-uniformity. Total kinetic energy of abrasive particle contacting wafer surface increases as raising of applied relative velocity and voltage, and achieves optimal value at electrode gap of 2 mm. Finally, optimal polishing performance for Cu blanket wafer and glass substrates of EKF-CMP improves significantly for material removal rate, non-uniformity, surface roughness. Results of this study can be effectively extended to contribute to the improvement and optimization of EKF-CMP process for semiconductor industry.

    摘要 Abstract Acknowledgement Table of Contents List of Figures List of Tables Nomenclature Chapter 1 INTRODUCTION 1.1 CMP background 1.2 Motivation 1.3 Objective 1.4 Dissertation contribution and scope 1.5 Dissertation outline Chapter 2 LITERATURE REVIEW 2.1 Previous studies of EKF-CMP in PML 2.2 CMP components 2.2.1 Pad parameter 2.2.2 The role of diamond dressing on pad asperity or roughness 2.2.3 Wafer parameter 2.2.4 Particle-slurry parameter 2.2.5 The role of slurry flow on passivated surface layer 2.3 Overview slurry flow 2.3.1 Analysis on mechanics for contact area 2.3.2 Analysis on lubrication region 2.3.3 Analysis on hydrodynamic flow pressure 2.3.4 Analysis on slurry flow velocity 2.3.5 Lubrication model in CMP 2.4 CMP performance 2.4.1 Preston equation 2.4.2 Parameters affecting MRR 2.5 Summary of literature review Chapter 3 EKF-CMP THEORY AND MODEL 3.1 EKF theory 3.1.1 Electro-kinetic force (EKF) 3.1.2 Electric double layer (EDL) 3.1.3 Zeta potential 3.1.4 Electro-osmosis flow (EOF) 3.2.5 EKF-CMP definition 3.2 Physical module in COMSOL applying 3D-EOF model 3.2.1 Electric current module 3.3.2 Laminar flow module 3.3.3 Particle tracing module 3.3 Development of 3D-EOF model 3.3.1 Definition of effective particle 3.2.2 Model of 3D-EOF in COMSOL 3.2.3 Assumption of 3D-EOF model 3.4 Result and discussion 3.4.1 EOF verification between theory and simulation 3.4.2 Analysis on effective particle 3.5 Summary of Chapter 3 Chapter 4 PARTICLE KINETIC ENERGY FOR EKF-CMP 4.1 Role of particle kinetic energy 4.2 Research method 4.2.1 3D-EOF simulation model development 4.2.2 Assumptions of 3D-EOF simulation model 4.2.3 Definition of particle kinetic energy 4.2.4 3D-EOF model for PIV test 4.3 Result and discussion 4.3.1 PIV results of 3D-EOF for IC-1000 pad 4.3.2 Investigation of particle kinetic energy 4.4 Summary of Chapter 4 Chapter 5 TRANSLATIONAL-ROTATIONAL KINETIC ENERGY OF PARTICLE IN EKF-CMP 5.1 Statement of translational-rotational kinetic energy of particle in EKF-CMP .2 Material and method 5.2.1 Physical mechanism of EKF-CMP 5.2.2 3D model development for EKF-CMP 5.2.3 Assumption of novel 3D model for EKF-CMP 5.2.4 Mathematical equation of TKE & RKE of particle 5.3 Result and discussion 5.3.1 Analysis on PIV result of 3D-EOF for IC-1400 pad 5.3.2 Analysis on results of relative velocity 5.3.3 Analysis on translational-rotational kinetic energy of particle 5.4 Summary of Chapter 5 Chapter 6 EKF-CMP EXPERIMENT 6.1 EKF-CMP experiment system 6.2 Result and discussion 6.2.1 Discussion on EKF-CMP efficiency for Cu blanket wafer at 1.5 psi 6.2.2 Discussion on EKF-CMP efficiency for Cu blanket wafer at 2.5 psi 6.2.3 Discussion on EKF-CMP performance for glass wafer 6.5 Summary of Chapter 6 Chapter 7 CONCLUSION AND RECOMENDATION 7.1 Conclusion 7.2 Recommendation Reference Appendix A Matlab program of effective particle analysis Appendix B Matlab program of particle kinetic energy Appendix C Matlab program of translational and rotational kinetic energy’s particle Appendix D Results of particle tracing in 3D model without groove in COMSOL Appendix E Results of particle tracing in 3D model with x-y groove in COMSOL Appendix F Results of particle tracing in 3D model with concentric circle groove in COMSOL Appendix G Results of Cu surface roughness after CMP and EKF CMP at 1.5 psi Appendix H Results of Cu surface roughness after CMP and EKF CMP at 2.5 psi Appendix I Results of Glass surface roughness after CMP and EKF CMP at 3.5 psi Appendix J Measuring and experimental equipment in PML Biography of Author

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