由於極紫外光微影系統技術開發上仍有困難，無法立即取代現有生產線上ArF-193nm浸潤式微影系統微影製程生產，因此吸引許多研究者尋找改善方案，其中可利用光源光罩最佳化程序搜尋最佳的光罩圖案設計與對應的最佳光源模態，進而改善微影成像品質的有效方法為本研究的研究方向。在本論文中，以光罩圖案最佳化為目標開發Interference Map Lithography Genetic Algorithm Optimization (IMLGAO)演算法。在IMLGAO中利用IM分佈圖(Interference Map)設計潛在的次級解析輔助特徵，並以MRC(mask rule checking)規則過濾所搜索次級解析輔助特徵是否合於製程規則。在計算主要光罩圖案對應之一組次級解析輔助特徵圖案後，對應此次級解析輔助特徵下利用PROLITH微影光學軟體進行主要光罩圖案之光學鄰近效應修正，以此為一組完整的光罩圖案組合，利用基因演算法搜尋最佳的一組次級解析輔助特徵與其所對應的主要光罩圖案之光學鄰近修正，如此程序持續至直到所設定的目標函數進入所設定的範圍。本論文所開發的演算法與傳統使用最佳化梯度降階法搜尋最佳次級解析輔助特徵圖案方法不同之處有三點：第一簡化光罩上次級解析輔助特徵圖案的複雜度使光罩成本降低，所開發IMLGAO設計之次級解析輔助特徵均為矩形。第二由不同製程參數下計算的邊緣位置誤差做為 IMLGAO 之個體環境適應度參數，故經IMLGAO選擇之光罩能確保製程視窗增加。第三除了IM分佈圖以外亦透過MRC 規則尋找潛在次級解析輔助特徵，故不需推導環境適應度參數與光罩間的關係做梯度運算，即可計算出次級解析輔助特徵之位置大小。本論文研究已成功開發浸潤式微影系統光學模型與IMLAGO演算程序，並利用所開發程序成功測試一維及二維圖案。

Before the extreme ultraviolet lithography system solves the bottleneck for implementing in the semiconductor production line, many researchers are searching for solutions for improvement in the lithography process quality at the ArF-193nm immersion lithography systems. The source mask optimization (SMO) technique is well known for its capability to improve the quality of lithography imaging. This thesis aims to develop the interference map lithography genetic algorithm optimization (IMLGAO) for mask optimization (MO). In IMLGAO, an interference map is calculated to design possible sub-resolution assist features (SRAFs) and MRC (mask rule checking) rules are used to filter whether the searched SRAFs are compatible with process rules. Firstly, the main feature without correction is combined with the SRAF calculated by IMLGAO. Next to apply the optical proximity correction (OPC) to modify the main feature and find the corresponding SRAF based on the developed IMLGAO. The searching loop continues until the objective function into the setting range. The significance between the algorithm developed in this thesis and the conventional method for searching the best SRAFs: the complexity of the SRAFs based on the IMLGAO is reduced, the IMLGAO ensures the process window increased, the integrated MRC rule is to find the possible SRAFs based on the IM profile to avoid the complicated calculation. This thesis successfully developed the optical model of immersion lithography and IMLAGO. The developed procedure has been successfully tested on the two dimensional mask patterns.

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