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研究生: Ajay Gupta
Ajay Gupta
論文名稱: 硬脆材料的鑽石線鋸加工研究之理論和實驗分析
Study on Diamond Wire Sawing Process for Hard and Brittle Materials: Theoretical and Experimental Analysis
指導教授: 陳炤彰
Chao-Chang Chen
口試委員: 蔡宏營
Hung-Yin Tsai
蔡曜陽
Yao-Yang Tsai
崔海平
Hai-Ping Hsui
趙崇禮
Choung-Lii Chao
蔡志成
Jhy-Cherng Tsai
許厲生
Li-Sheng Hsu
陳士勛
Shih-Hsun Chen
學位類別: 博士
Doctor
系所名稱: 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年: 2020
畢業學年度: 108
語文別: 英文
論文頁數: 245
中文關鍵詞: 鑽石線線鋸切割線接觸長度表面粗糙度次表面破壞
外文關鍵詞: Diamond wire sawing (DWS), Contact length, Surface roughness, Sub-surface damage
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  • 固定式磨料或鑽石線鋸切割技術(DWS)隨著技術的進步已逐漸被開發為游離磨料線鋸切削(SWS)的潛在替代品,可用於對硬質和脆性材料進行切片。儘管此技術有許多優點,DWS工藝仍會在切割表面上造成粗糙度、波紋度和鋸痕,以及在晶圓表面下的次表面損傷(SSD)。因此,本論文旨在改進現有的線切割技術,優化矽和藍寶石DWS製程的參數設定,以達到更好的切割表面並降低次表層破壞。為此吾人對搖擺模式下的DWS技術進行了基礎研究,以生成線網 (wire web) 方式進行模擬,並建立晶錠與金屬線網接觸長度的理論模型。實驗結果顯示,搖擺模式可使線材與工件之間的接觸長度較小且保持一致,從而在整個晶圓表面上提供更均勻的切割條件,並改善了表面結果。除此之外,研究中進行了參數分析,以了解製程參數設定和鋼線特性對c面藍寶石晶片的表面形態,表面粗糙度,次表面損傷和鑽石線磨損的影響。結果顯示線速度的影響比磨料尺寸和分佈對切成薄片的晶片表面粗糙度的影響更大。同時研究中開發了將SSD與矽晶圓的表面粗糙度(Rz)相關聯的次表面損傷(SSD)預測模型。以脆性裂紋系統和壓痕斷裂力學為基礎進行分析,可得到矽晶圓基板的鑽石線鋸製程中SSD與Rz的明確關係。實驗證明所預測的SSD值與從實驗中獲得的值相當。研究最後基於鋼線特性和製程參數,建立了單晶矽DWS的粗糙度預測模型。考慮具有隨機特徵的線特性,包括磨粒的尺寸和位置以及製程參數,以反應實際鋼線在工件表面上的運動型態。這項研究的結果可用於製程改進和DWS技術的製程參數優化,以獲得質量更好的晶圓。


    Fixed abrasive or diamond wire sawing (DWS) technology has been developed as a potential alternative to slurry sawing process (SWS) for slicing hard and brittle materials. However, despite of many advantages, the DWS process results in roughness, waviness damages and saw marks on the cut surface and subsurface damages beneath the ground surfaces. Therefore, this study aims for improvement in existing slicing process and the optimization of process parameters for DWS of silicon and sapphire in order to achieve a better surface and subsurface quality. To achieve this, the fundamental investigation on rocking mode DWS process was performed to emulate the wire web and the theoretical model to determine contact length between ingot and wire is established. The results demonstrated that rocking mode allows small and consistent contact length between wire and workpiece thus provides more uniform slicing conditions across the wafer surface and improved the surface quality. Besides that, parametric analysis was performed to ensure the effect of process parameters and wire characteristics on the surface morphology, surface roughness, subsurface damage and diamond wire wear for c-plane sapphire wafer. Results have shown that the effect of wire speed is more pronounced than abrasive size and distribution on surface roughness of sliced wafers. Further, the sub-surface damage (SSD) prediction model is developed which relates SSD with surface roughness (Rz) for silicon wafer. An explicit relation between SSD and Rz is derived for diamond wire sawing process of silicon substrates using classic brittle crack system and indentation fracture mechanics. The SSD values predicted by the prosed relation were proved to be comparable with the values obtained from experiments. Lastly, the roughness prediction model for DWS of monocrystalline silicon was established based on wire and process parameters. The wire parameters with random features including the sizes and positions of the abrasive grits along with process parameters is considered to map the dynamics of real wire motion on the workpiece surface.

    摘要 Abstract Acknowledgement Table of contents Nomenclature List of Figures List of Tables Chapter 1 INTRODUCTION 1.1 Wire sawing of hard and brittle materials 1.2 Research goal and objectives 1.3 Framework and contribution of the chapters Chapter 2 LITERATURE REVIEW 2.1 Material properties and crystal structure of sapphire 2.2 Wire sawing of silicon 2.3 Free and fixed abrasive wire sawing process 2.4 Major process performance in DWS 2.4.1 Surface morphology 2.4.2 Total thickness variation (TTV) 2.4.3 Surface and sub-surface crack 2.4.4 Fracture strength 2.5 Effect of abrasive properties and wire wear 2.6 Cutting mode and brittle to ductile transition (BTD) 2.7 Force modelling in wire sawing process 2.8 Rocking mode DWS process 2.9 Patent survey of wire sawing process 2.10 Summary of literature review Chapter 3 SUBSURFACE DAMAGE MODEL FOR DIAMOND WIRE SAWN SILICON 3.1 Subsurface damage for DWS process 3.2 Theoretical analysis 3.2.1 Subsurface damage depth for DWS 3.2.2 Relationship between SSD and surface roughness 3.2.3 Calculation of elastic recovery parameter (β) 3.3 Experiments method and parameters 3.4 Validation and discussion 3.4.1 Comparison with experimental results 3.4.2 Effect of grit angle 3.5 Further discussion 3.5.1 Relationship between SSD and process parameters 3.5.2 Comparison with the experiments 3.5.3 Influence of wire speed and feed rate 3.5.4 Effect of abrasive density 3.6 Summary of chapter 3 Chapter 4 GENERATION OF SLICED WAFER SURFACE FOR SILICON AND PREDICTION OF SURFACE ROUGHNESS 4.1 Prediction of DWS induced surface roughness 4.2 Characteristics of diamond coated wire 4.3 Generation of diamond coated wire 4.4 Generation of sliced surface topography 4.5 Simulation and experimental results 4.6 Graphical user interface (GUI) 4.7 Slicing of monosilicon (small ingot) 4.7.1 Surface roughness 4.7.2 Waviness 4.7.3 Wire wear 4.8 Slicing experiment (3 inch monosilicon) 4.8.1 Wafer geometry 4.9 Summary of chapter 4 Chapter 5 MODELING OF ROCKING MODE DWS PROCESS 5.1 Contact length in rocking wire DWS 5.2 Theoretical model 5.2.1 Variation in Z direction and contact length 5.2.2 Contact length calculation for rocking mode DWS 5.3 Equivalent chip thickness 5.4 Kinematic analysis 5.5 Experimental results and discussion 5.6 Summary of chapter 5 Chapter 6 STUDY ON PARAMETRIC AND DIAMOND WIRE EFFECT ON QUALITY OF WAFERS FOR ROCKING MODE SAWING OF c-PLANE SAPPHIRE 6.1 DWS for sapphire wafer 6.2 Experimental method and parameters 6.3 Surface roughness 6.4 Surface morphology and material removal mode 6.5 Subsurface damage 6.5.1 Effect of feed on subsurface damage 6.6 Wire wear analysis 6.7 Summary of chapter 6 Chapter 7 Results and discussions 7.1 Theoretical prediction of surface roughness and SSD for monocrystalline silicon 7.2 Evaluation of rocking mode in DWS of sapphire wafers 7.3 Academic contribution Chapter 8 CONCLUSION AND RECOMMENDATION 8.1 Conclusion 8.2 Recommendation APPENDIX A DWS -150 diamond wire sawing machine APPENDIX B Measurement equipment APPENDIX C Matlab programing APPENDIX D Simulation and experimental data Biography of author

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