[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, "Electric field effect in atomically thin carbon films," Sciences, vol. 306, no. 5696, pp. 666-669, 2004.
[2] P. Ma, Y. Salamin, B. Baeuerle, A. Josten, W. Heni, A. Emboras, and J. Leuthold, "Plasmonically enhanced graphene photodetector featuring 100 Gbit/s data reception, high responsivity, and compact size," ACS Photonics, vol. 6, no. 1, pp. 154-161, 2018.
[3] A. Pospischil, M. Humer, M. M. Furchi, D. Bachmann, R. Guider, T. Fromherz, and T. Mueller, "CMOS-compatible graphene photodetector covering all optical communication bands," Nat. Photonics, vol. 7, no. 11, pp. 892-896, 2013.
[4] J. Capmany, D. Doménech, and P. Muñoz, "Graphene integrated microwave photonics," J. Light. Technol., vol. 32, no. 20, pp. 3785-3796, 2014.
[5] R. Degl’Innocenti, L. Xiao, S. J. Kindness, V. S. Kamboj, B. Wei, P. Braeuninger-Weimer, K. Nakanishi, A. I. Aria, S. Hofmann, and H. E. Beere, "Bolometric detection of terahertz quantum cascade laser radiation with graphene-plasmonic antenna arrays," J. Phys. D, vol. 50, no. 17, p. 174001, 2017.
[6] H. Li, J. Wu, Z. Yin, and H. Zhang, "Preparation and applications of mechanically exfoliated single-layer and multilayer MoS2 and WSe2 nanosheets," Acc. Chem. Res., vol. 47, no. 4, pp. 1067-1075, 2014.
[7] H. R. Gutiérrez, Perea-López, Nestor, A. L. Elías, Berkdemir, Ayse, B. Wang, R. Lv, López-Urías, Florentino, V. H. Crespi, Terrones, Humberto, and M. Terrones, "Extraordinary room-temperature photoluminescence in triangular WS2 monolayers," Nano Lett., vol. 13, no. 8, pp. 3447-3454, 2013.
[8] X. Liu, H.-L. Shuai, Y.-J. Liu, and K.-J. Huang, "An electrochemical biosensor for DNA detection based on tungsten disulfide/multi-walled carbon nanotube composites and hybridization chain reaction amplification," Sens. Actuators B Chem., vol. 235, pp. 603-613, 2016.
[9] T. Kanazawa, T. Amemiya, A. Ishikawa, V. Upadhyaya, K. Tsuruta, T. Tanaka, and Y. J. S. r. Miyamoto, "Few-layer HfS 2 transistors," Sci. Rep., vol. 6, no. 1, pp. 1-9, 2016.
[10] J. Zhang, F. Wang, V. B. Shenoy, M. Tang, and J. Lou, "Towards controlled synthesis of 2D crystals by chemical vapor deposition (CVD)," Mater. Today, vol. 40, pp. 132-139, 2020.
[11] B. Deng, Z. Liu, and H. Peng, "Toward mass production of CVD graphene films," Adv. Mater., vol. 31, no. 9, p. 1800996, 2019.
[12] Z. Huang, T. Wu, S. Kong, Q.-L. Meng, W. Zhuang, P. Jiang, and X. Bao, "Enhancement of anisotropic thermoelectric performance of tungsten disulfide by titanium doping," J. Mater. Chem. C, vol. 4, no. 26, pp. 10159-10165, 2016.
[13] A. A. Tedstone, D. J. Lewis, and P. O’Brien, "Synthesis, properties, and applications of transition metal-doped layered transition metal dichalcogenides," Chem. Mater., vol. 28, no. 7, pp. 1965-1974, 2016.
[14] N. Liu, H. Tian, G. Schwartz, J. B.-H. Tok, T.-L. Ren, and Z. Bao, "Large-area, transparent, and flexible infrared photodetector fabricated using pn junctions formed by N-doping chemical vapor deposition grown graphene," Nano Lett., vol. 14, no. 7, pp. 3702-3708, 2014.
[15] W. Spear and P. Le Comber, "Substitutional doping of amorphous silicon," J. Alloys Compd., vol. 17, no. 9, pp. 1193-1196, 1975.
[16] H. Conrads and M. Schmidt, "Plasma generation and plasma sources," Plasma Sources Sci Technol, vol. 9, no. 4, p. 441, 2000.
[17] J. R. Conrad, J. L. Radtke, R. A. Dodd, F. J. Worzala, and N. C. Tran, "Plasma source ion‐implantation technique for surface modification of materials," J. Appl. Phys., vol. 62, no. 11, pp. 4591-4596, 1987.
[18] G. Yang, L. Li, W. B. Lee, and M. C. Ng, "Structure of graphene and its disorders: a review," Sci Technol Adv Mater, vol. 19, no. 1, pp. 613-648, 2018.
[19] J. H. Seol, Jo, Insun, A. L. Moore, Lindsay, Lucas, Z. H. Aitken, Pettes, Michael T, X. Li, Yao, Zhen, Huang, Rui, and D. Broido, "Two-dimensional phonon transport in supported graphene," Science, vol. 328, no. 5975, pp. 213-216, 2010.
[20] K. Xu, Z. Wang, F. Wang, Y. Huang, F. Wang, L. Yin, C. Jiang, and J. J. A. M. He, "Ultrasensitive phototransistors based on few‐layered HfS2," Adv. Mater., vol. 27, no. 47, pp. 7881-7887, 2015.
[21] M. Cox, A. Gorodetsky, B. Kim, K. S. Kim, Z. Jia, P. Kim, Nuckolls, Colin, and I. Kymissis, "Single-layer graphene cathodes for organic photovoltaics," Appl. Phys. Lett., vol. 98, no. 12, p. 67, 2011.
[22] C. Mattevi, H. Kim, and M. Chhowalla, "A review of chemical vapour deposition of graphene on copper," J. Mater. Chem., vol. 21, no. 10, pp. 3324-3334, 2011.
[23] P. Sehrawat, S. Islam, P. Mishra, and S. Ahmad, "Reduced graphene oxide (rGO) based wideband optical sensor and the role of temperature, defect states and quantum efficiency," Sci. Rep., vol. 8, no. 1, pp. 1-13, 2018.
[24] R. J. Toh, Z. Sofer, J. Luxa, D. Sedmidubský, and M. Pumera, "3R phase of MoS2 and WS2 outperforms the corresponding 2H phase for hydrogen evolution," ChemComm, vol. 53, no. 21, pp. 3054-3057, 2017.
[25] Y. Liu, N. O. Weiss, X. Duan, H.-C. Cheng, Y. Huang, and X. Duan, "Van der Waals heterostructures and devices," Nat. Rev. Mater., vol. 1, no. 9, pp. 1-17, 2016.
[26] Y.-H. Zhao, F. Yang, J. Wang, H. Guo, and W. Ji, "Continuously tunable electronic structure of transition metal dichalcogenides superlattices," Sci. Rep., vol. 5, no. 1, pp. 1-5, 2015.
[27] W.-J. Su, H.-C. Chang, Y.-T. Shih, Y.-P. Wang, H.-P. Hsu, Y.-S. Huang, and K.-Y. Lee, "Two dimensional MoS2/graphene pn heterojunction diode: fabrication and electronic characteristics," J. Alloys Compd., vol. 671, pp. 276-282, 2016.
[28] M. D. Siao, Y. C. Lin, T. He, M. Y. Tsai, K. Y. Lee, S. Y. Chang, K. I. Lin, Y. F. Lin, M. Y. Chou, and K. Suenaga, "Embedment of multiple transition metal impurities into WS2 monolayer for bandstructure modulation," Small, pp. 2007171, 2021.
[29] H. Yuan, H. Wang, and Y. Cui, "Two-dimensional layered chalcogenides: from rational synthesis to property control via orbital occupation and electron filling," Acc. Chem. Res., vol. 48, no. 1, pp. 81-90, 2015.
[30] L. E. Conroy and K. C. Park, "Electrical properties of the group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide," Inorg. Chem., vol. 7, no. 3, pp. 459-463, 1968.
[31] N. Wu, X. Zhao, X. Ma, Q. Xin, X. Liu, T. Wang, and S. Wei, "Strain effect on the electronic properties of 1T-HfS2 monolayer," Physica E Low Dimens. Syst. Nanostruct., vol. 93, pp. 1-5, 2017.
[32] W. Zhang, Z. Huang, W. Zhang, and Y. Li, "Two-dimensional semiconductors with possible high room temperature mobility," Nano Res., vol. 7, no. 12, pp. 1731-1737, 2014.
[33] B. Wei and C. Lu, "Transition metal dichalcogenide MoS2 field-effect transistors for analog circuits: a simulation study," Int J Electron Commun, vol. 88, pp. 110-119, 2018.
[34] K. Xu, Y. Huang, B. Chen, Y. Xia, W. Lei, Z. Wang, Q. Wang, F. Wang, L. Yin, and J. He, "Toward high‐performance top‐gate ultrathin HfS2 field‐effect transistors by interface engineering," Small, vol. 12, no. 23, pp. 3106-3111, 2016.
[35] M. M. Obeid, A. Bafekry, S. U. Rehman, and C. V. Nguyen, "A type-II GaSe/HfS2 van der Waals heterostructure as promising photocatalyst with high carrier mobility," Appl. Surf. Sci., vol. 534, p. 147607, 2020.
[36] J. Ye, K. Liao, X. Ge, Z. Wang, Y. Wang, M. Peng, T. He, P. Wu, H. Wang, and Y. Chen, "Narrowing bandgap of HfS2 by Te substitution for short‐wavelength infrared photodetection," Adv. Opt. Mater., pp. 2002248, 2021.
[37] T. Kanazawa, T. Amemiya, V. Upadhyaya, A. Ishikawa, K. Tsuruta, T. Tanaka, and Y. Miyamoto, "Performance improvement of HfS2 transistors by atomic layer deposition of HfO2," IEEE Trans Nanotechnol, vol. 16, no. 4, pp. 582-587, 2017.
[38] V. Upadhyaya, T. Kanazawa, and Y. Miyamoto, "Vacuum annealing and passivation of HfS2 FET for mitigation of atmospheric degradation," IEICE Trans. Electron., vol. 100, no. 5, pp. 453-457, 2017.
[39] K. Obodo, G. Gebreyesus, C. Ouma, J. Obodo, S. Ezeonu, D. Rai, and B. Bouhafs, "Controlling the electronic and optical properties of HfS2 mono-layers via lanthanide substitutional doping: a DFT+ U study," RSC Adv., vol. 10, no. 27, pp. 15670-15676, 2020.
[40] L. Fu, F. Wang, B. Wu, N. Wu, W. Huang, H. Wang, C. Jin, L. Zhuang, J. He, and L. Fu, "Van der Waals Epitaxial Growth of Atomic Layered HfS2 Crystals for ultrasensitive near‐infrared phototransistors," Adv. Mater., vol. 29, no. 32, p. 1700439, 2017.
[41] X. Zhao, T. Wang, G. Wang, X. Dai, C. Xia, and L. J. A. S. S. Yang, "Electronic and magnetic properties of 1T-HfS2 by doping transition-metal atoms," Appl. Surf. Sci., vol. 383, pp. 151-158, 2016.
[42] X. Zhao, C. Xia, T. Wang, X. Dai, and L. Yang, "Characteristics of n-and p-type dopants in 1T-HfS2 monolayer," J. Alloys Compd., vol. 689, pp. 302-306, 2016.
[43] M.-L. Tsai, S.-H. Su, J.-K. Chang, D.-S. Tsai, C.-H. Chen, C.-I. Wu, L.-J. Li, L.-J. Chen, and J.-H. He, "Monolayer MoS2 heterojunction solar cells," ACS Nano, vol. 8, no. 8, pp. 8317-8322, 2014.
[44] S. Wi, H. Kim, M. Chen, H. Nam, L. J. Guo, E. Meyhofer, and X. Liang, "Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping," ACS Nano, vol. 8, no. 5, pp. 5270-5281, 2014.
[45] R. L. Cheng, Dehui Zhou, Hailong Wang, Chen Yin, Anxiang Jiang, Shan Liu, Yuan Chen, Yu Huang, Yu Duan,and Xiangfeng, "Electroluminescence and photocurrent generation from atomically sharp WSe2/MoS2 heterojunction p–n diodes," Nano Lett., vol. 14, no. 10, pp. 5590-5597, 2014.
[46] Y. Deng, Z. Luo, N. J. Conrad, H. Liu, Gong, Yongji, S. Najmaei, Ajayan, Pulickel M, J. Lou, Xu, Xianfan, and P. D. Ye, "Black phosphorus–monolayer MoS2 van der Waals heterojunction p–n diode," ACS Nano, vol. 8, no. 8, pp. 8292-8299, 2014.
[47] Y. Gong, S. Lei, G. Ye, B. Li, He, Yongmin, Keyshar, Kunttal, X. Zhang, Wang, Qizhong, Lou, Jun, and Z. Liu, "Two-step growth of two-dimensional WSe2/MoSe2 heterostructures," Nano Lett., vol. 15, no. 9, pp. 6135-6141, 2015.
[48] M.-Y. Li, C.-H. Chen, Y. Shi, and L.-J. Li, "Heterostructures based on two-dimensional layered materials and their potential applications," Mater. Today, vol. 19, no. 6, pp. 322-335, 2016.
[49] L. Liu, N. Xu, Y. Zhang, P. Zhao, H. Chen, and S. Deng, "Van der Waals bipolar junction transistor using vertically stacked two‐dimensional atomic crystals," Adv. Funct. Mater., vol. 29, no. 17, p. 1807893, 2019.
[50] A. M. Afzal, M. Z. Iqbal, G. Dastgeer, G. Nazir, S. Mumtaz, M. Usman, and J. Eom, "WS2/GeSe/WS2 bipolar transistor-based chemical sensor with fast response and recovery Times," ACS Appl. Mater. Interfaces, vol. 12, no. 35, pp. 39524-39532, 2020.
[51] P. Graves and D. Gardiner, "Practical Raman spectroscopy," Springer, pp. 1-12, 1989.
[52] J. I. Goldstein, D. E. Newbury, J. R. Michael, N. W. Ritchie, J. H. J. Scott, and D. C. Joy, "Scanning electron microscopy and X-ray microanalysis," Springer, pp. 65-91, 2017.
[53] M. S. Dresselhaus, A. Jorio, M. Hofmann, G. Dresselhaus, and R. Saito, "Perspectives on carbon nanotubes and graphene Raman spectroscopy," Nano Lett., vol. 10, no. 3, pp. 751-758, 2010.
[54] A. Cingolani, M. Lugara, and F. Levy, "Resonance Raman scattering in HfSe2 and HfS2," Phys Scr, vol. 37, no. 3, p. 389, 1988.
[55] A. Azcatl, Qin, Xiaoye, Prakash, Abhijith, Zhang, Chenxi, Cheng, Lanxia, Wang, Qingxiao, Lu, Ning, Kim, Moon J, Kim, Jiyoung, and Cho, Kyeongjae, "Covalent nitrogen doping and compressive strain in MoS2 by remote N2 plasma exposure," ACS Appl. Mater. Interfaces, vol. 16, no. 9, pp. 5437-5443, 2016.
[56] M. Stoehr, H.-S. Seo, I. Petrov, and J. Greene, "Effect of off stoichiometry on Raman scattering from epitaxial and polycrystalline HfNx (0.85≤ x≤ 1.50) grown on MgO (001)," J. Appl. Phys., vol. 104, no. 3, p. 033507, 2008.
[57] L. Bulusheva, Okotrub, AV, Kinloch, IA, Asanov, IP, Kurenya, AG, Kudashov, AG, Chen, X, and Song, H, "Effect of nitrogen doping on Raman spectra of multi‐walled carbon nanotubes," PHYS STATUS SOLIDI A, vol. 245, no. 10, pp. 1971-1974, 2008.
[58] Z. Hu, K. Nomoto, Song, Bo, Zhu, Mingda, M. Qi, Pan, Ming, X. Gao, Protasenko, Vladimir, Jena, Debdeep, and H. G. Xing, "Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown," Appl. Phys. Lett., vol. 107, no. 24, p. 243501, 2015.
[59] T. Li, Bandari, Vineeth Kumar, M. Hantusch, Xin, Jianhui, R. Kuhrt, Ravishankar, Rachappa, L. Xu, Zhang, Jidong, M. Knupfer, and F. Zhu, "Integrated molecular diode as 10 MHz half-wave rectifier based on an organic nanostructure heterojunction," Nat. Commun., vol. 11, no. 1, pp. 1-10, 2020.
[60] C. A. Nijhuis, W. F. Reus, A. C. Siegel, and G. M. Whitesides, "A molecular half-wave rectifier," J. Am. Chem. Soc., vol. 133, no. 39, pp. 15397-15411, 2011.