互動式主動有機發光二極體之新式電壓編碼畫素電路及其顯示與感測電路整合設計

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研究生：	曾禹荃 Yu-Chuan Tseng
論文名稱：	互動式主動有機發光二極體之新式電壓編碼畫素電路及其顯示與感測電路整合設計 Novel Voltage Programming pixel circuit and integration with Sensing Pixel Circuit Design for AMOLED Displays
指導教授：	范慶麟 Ching-Lin Fan
口試委員:	李志堅 Chih-Chien Lee 徐世祥 Shih-Hsiang Hsu 顏文正 Wen-Jeng Yan 范慶麟 Ching-Lin Fan
學位類別：	碩士 Master
系所名稱：	電資學院 - 電子工程系 Department of Electronic and Computer Engineering
論文出版年：	2018
畢業學年度：	106
語文別：	英文
論文頁數：	91
中文關鍵詞：	主動式有機發光二極體顯示器、畫素補償電路、三維度顯示器、顯示與感測整合電路
外文關鍵詞：	LTPS TFTs, Integration pixel circuit
相關次數：	點閱：477 下載：0
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主動式有機發光二極體(AMOLED)由於其自發光性、廣視角、快的反應速度、輕薄等優勢，被視為是極具潛力的下一世代的顯示器技術。而在驅動主動式有機發光二極體之畫素電路部分，薄膜電晶體扮演非常重要的角色，由於薄膜電晶體材料特性的不同，優勢與適用的顯示器尺寸也不相同。非晶矽(a-Si)技術已相當成熟，適用於大尺寸顯示器，但是其較低的載子遷移率，使其無法進行高速的操作。低溫多晶矽(LTPS)具有高載子遷移率使其可進行高速操作，但是在低溫多晶矽的薄膜電晶體製造過程中，在準分子雷射退火時會造成電性差異，會使得在相同灰階下，電流不一的情況。氧化銦鎵鋅(IGZO)有著不錯的載子遷移率，在大面積製程較均勻及製成溫度較低的優點。然而，在實際的AMOLED顯示器上，電晶體除了製程上造成電性的差異外，元件經過長時間的操作也會造成劣化。
此外，互動式顯示器為一種結合顯示器與光感測器之快速發展的應用型顯示器，在傳統互動式螢幕的影像輸入及輸出是藉由獨立的顯示器搭配額外的攝影機所完成，環境光源經由攝影機內的感光元件轉換成電子訊號，經過影像處理之後光感測器所接受到的畫面可以直接輸入至顯示螢幕上，因此互動式螢幕具有即時顯示的優點。傳統互動式螢幕的顯示裝置與感測裝置無法整合的原因之一，在於顯示器與感測器所使用的基板不同，顯示器所使用的電子元件及基板為薄膜電晶體及玻璃基板，攝影機內部的感光元件使用的電子元件及基板是光電二極體搭配互補式金屬氧化物半導體(CMOS)放大電路及矽基板，由於矽基板是不透明的，造成整體的開口率大幅下降。
因此，第一個電路畫素電路是以低溫多晶矽組成的4T2C畫素電路，其特點為使用新式步階發光方式，縮短了元件的操作時間。除了補償驅動電晶體的臨界電壓變化外，同時補償因製程或長時間操作造成的載子遷移率的變化。值得一提的是，若OLED在發光階段以外的操作階段發光，會造成閃爍，導致畫面的不均勻。此電路只在發光階段進行發光，避免畫免閃爍。模擬結果顯示，在驅動薄膜電晶體的臨界電壓飄移正負0.33V時，電路的平均錯誤率僅為2%。
第二個電路為使用氧化銦鎵鋅(IGZO)的7T2C顯示感測整合型畫素電路，電路中使用的IGZO 模型為從實驗室所得的數據，利用AIM-SPICE進行擬合，並使用OLED之有機層做為吸光層，達到整合之目的。模擬結果證實了此電路的可行性，並藉由電路設計，達到補償驅動薄膜電晶體之臨界電壓飄移之效果。模擬結果顯示，在驅動薄膜電晶體的臨界電壓飄移正負0.5V時，電路的平均錯誤率僅在5.5% 以下。

Active matrix organic light emitting diode (AMOLED) display has become the most potential display for the next generation of visual technologies due to its self-illuminating, wide viewing angle, fast response time. When it comes to the pixel circuit of the AMOLED, thin film transistors (TFTs) play a very important role. Owing to different material properties, the advantages and suitable size for displays are different. The manufacture process of amorphous silicon (a-Si) is very mature, which provides good uniformity for large size display. However, the poor mobility makes it difficult for high speed operation. Low temperature poly-silicon (LTPS) offers high mobility to carry out high speed displays, while the excimer laser annealing (ELA) for LTPS crystallization influences the electrical properties of the TFT, which cause the non-uniformity of the gray scale. Indium Gallium Zinc Oxide (IGZO) provides low cost due to the fabrication in room temperature, relatively good mobility and uniformity over large area display. However, in the actual AMOLED displays, not only the fabrication process but also long time operation cause deteriorate of the device.
In addition to the display technology, bi-directional displays is the rapid growth application in displays. In the traditional interactive displays, the image input and output are done with an independent display screen with an extra camera. The ambient light source is converted into an electronic signal via a photosensitive element in the camera, after the image processing, the light source received by the photo sensor can be directly input to the display screen. Therefore, the interactive display have the advantage of real-time display. One of the main reasons of the display and the sensing part of the traditional interactive display cannot be integrated is that the substrate used in the display and the sensor is different. The electronic components and the substrate used in the display part are the thin film transistors (TFTs) and the glass substrate, while the sensing part are photodiodes with CMOS amplifier circuits and Silicon wafers. Causes the decrease of the aperture ratio at the pixel.
Therefore, the first 4T2C pixel circuit consists of LTPS, which characterizes the new voltage programming method and reduces the operating time. The proposed circuit not only compensates the threshold voltage but also the mobility shift of the driving TFT. Moreover, when the OLED lighten up before the emission period, flicker occurs, which leads to non-uniformity of the image. This circuit avoids flicker through the design, the OLED only emits in the emission period. The simulation results show the OLED current error rate only 2% while the threshold voltage shifts ±0.33V.
The second circuit is the 7T2C integrated sensing and displaying pixel circuit utilizes IGZO. The IGZO model used in this circuit is extracted from the laboratory and fitted by AIM-SPICE. The OLED is used as the emitting and the absorption layer for displaying and sensing. The simulation results verified the feasibility of the proposed circuit and the compensation function via design. While the threshold voltage shifts ±0.5V, the OLED current rate still under 5.5%.

Contents
Abstract (in Chinese)    I
Abstract        III
Acknowledgement        VI
Contents        VII
List of Figures        X
List of Tables        XIV
Chapter 1     Introduction    1
1.1 Research Background    1
1.2 AMOLED Structure and Operation    3
1.2.1    Mechanism of OLED Emission    5
1.2.2    PMOLED    7
1.2.3    AMOLED    8
1.3 Three-Dimension Displays    9
1.3.1    Overview of 3D Technology    9
1.3.2    Stereoscopic Displays    11
1.3.3    Emission Driving Scheme    13
1.4 Image Sensors and Operation    14
1.4.1    Charge-Coupled Device (CCD) Image Sensors    15
1.4.2    Photodiodes    17
1.4.3    Phototransistors    18
1.4.4    Conventional Sensor Circuit    21
1.5 Interactive Displays    23
1.6 Motivations        24
Chapter 2     AMOLED Pixel Circuit Driving Method    26
2.1 Driving Device        26
2.1.1 a-Si TFT    26
2.1.2 LTPS TFT    27
2.1.3 a-IGZO TFT    27
2.2 Compensation for AMOLED Displays    28
2.2.1 Threshold Voltage    30
2.2.2    Mobility    32
2.2.3    OLED Degradation    34
2.2.4    Voltage Drop of the Power Line    36
2.3 TFT Model Fitting Flow    37
Chapter 3     A Novel 4T2C LTPS Pixel Circuit Compensate for Mobility and Threshold Voltage Shift for AMOLED Displays    40
3.1 Introduction        40
3.2 Circuit Scheme and Operation    42
3.3 Simulation Results and Discussion    47
3.4 Summary        53
Chapter 4     A New Integrated Sensing and Display Pixel for Compensating Threshold Voltage Shifts for AMOLED Interactive Displays    54
4.1 Introduction        54
4.2 Circuit Scheme and Operation    55
4.3 Simulation Results and Discussion    61
4.4 Summary        67
Chapter 5     Conclusions and Future Work    68
5.1 Conclusions        68
5.2 Future Work        70
REFERENCE        71









List of Figures
Fig. 1- 1 The classification of Displays    1
Fig. 1-2 The structure difference between TFT-LCD and OLED    3
Fig. 1-3 Transition process of photogenerated excitons    4
Fig. 1-4 Schematic of Multi-layer of OLED emission structure and energy level illustration    6
Fig. 1-5 Passive matrix method for OLED displays    8
Fig.1-6 Active matrix method for OLED displays    9
Fig. 1-7 Classification of 3D Displays    12
Fig. 1-8 Illustration of Area Division and Time Division    12
Fig. 1-9 3D Implementation (a) by PE and (b) by SE    14
Fig. 1-10 Schematic structure of typical CCD image sensor    16
Fig. 1-11 MOS capacitors    16
Fig. 1-12 Charge transmit in MOS capacitors    16
Fig. 1-13 The operating principle of the photodiode    17
Fig. 1-14. Schematic diagram of bottom-gate, top contact thin-film phototransistor (photo-TFT).    20
Fig. 1-15 Detection mechanism of silicon and metal-oxide semiconductor materials.    21
Fig. 1-16 The conventional 3T sensor circuit    23
Fig. 1-17 Applications of interactive displays    24
Fig. 2- 1 N-type / P-type of 2T1C Pixel Circuit    29
Fig. 2-2 (a)and(b) Methods for detecting threshold voltage of driving TFT    31
Fig. 2-3 Transfer characteristics of the TFT models for the mobility doubling    33
Fig. 2-4 Mobility compensation operation    33
Fig. 2-5 Luminance (L) / initial luminance (Lo) and driving voltage (V)/initial driving voltage (VO) versus time of a mixed emitting layer OLED and a standard bilayer OLED    35
Fig. 2-6 (a) Experimental results of the normalized luminance in the constant dc and ac bias for over 14400 s of continuous operation. (b) Normalized luminance as a function of the duty cycle, in which the duty cycle of 100% represents the dc condition. (c) Brightness degradation of the OLED at the 20% ac condition can be diminished with an increased reversed-bias voltage    35
Fig. 2-7 The equivalent mechanism of IR Drop in 30-inch display    36
Fig. 2-8 a-IGZO Model Fitting Flow    38
Fig. 2-9 Measured and Simulated a-IGZO TFT (a) Transfer and (b)output curve    38
Fig. 2-10 The Equivalent Circuit for OLED    38
Fig. 2-11 Transfer Curve of Poly-Si TFT Model PSIA2 (Level 16)    39
Fig. 3-1 (a) Conventional and (b) parallel addressing schemes for voltage-programmed AMOLED displays    41
Fig. 3-2 The proposed 4T2C LTPS pixel circuit and time diagram    43
Fig. 3-3 The equivalent LTPS circuit at each state in operation    46
Fig. 3-4 Simulated transient waveform of proposed pixel circuit at VDATA = -1V    47
Fig. 3-5 Transient waveform of source voltage (Node A) in different data voltage ((a) from -0.2V to -2.6V. (b) -3V for row 1 and 3, -1V for row 2 and 4).    49
Fig. 3-6 (a) The OLED current of proposed pixel circuit with driving TFT threshold voltage shift    51
Fig. 3-7 (b) The OLED current of conventional 2T1C pixel circuit with driving TFT threshold voltage shift    51
Fig. 3-8 OLED current error rate as the mobility shifts from 0 to 50% for the proposed circuit and the conventional 2T1C pixel circuit    52
Fig. 4- 1 (a) Schematic circuit diagram and (b) operational waveforms of the proposed pixel circuit    56
Fig. 4-2 The operation scheme of the display part of the proposed circuit    59
Fig. 4-3 The operation scheme of the sensing part of the proposed circuit    61
Fig. 4-4 Simulated transient waveforms of node A and B of the proposed circuit in four display operation phases for threshold voltage shift of DTFT at the same VDATA.    63
Fig. 4-5 (a) OLED current and (b) relative current error rates of proposed pixel circuit with threshold voltage shift of DTFT (ΔVTH = 0.5V)    64
Fig. 4-6 OLED current variations as a function of (a) ΔVTH_OLED and (b) the IR drop in the power line from 0 to 0.5V    65
Fig. 4-7 Simulated output current in different photocurrent with the threshold voltage variation of DTFT    66
Fig. 4-8 Simulated transient waveforms of node B and C of the proposed circuit in the display and sensing part with threshold voltage shift of DTFT    67




List of Tables
Table 2-1    Different Backplane Technologies    28
Table 2-2    Comparison Between Two Programming Method    30
Table 3-1    Design Parameters of The Pixel Circuit    43
Table 3-2    Comparison of Similar Pixel Circuits    53
Table 4-1    Design Parameters of the Pixel Circuit    63



                                

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