本論文以直流磁控式濺鍍法實現矽/鍺膜同/異質磊晶，成功地在矽基板上達成矽膜和鍺膜的同異質磊晶成長，以及在鍺基板上之鍺膜同質磊晶。最後並以濺鍍磊晶成長矽膜於矽基板上之方式形成n+-p接面二極體元件。論文中探討同異質磊晶的載台溫度、濺鍍壓力和電源功率等參數變化對磊晶矽膜或鍺膜的影響。研究結果得知，在175℃之溫度下，矽膜可同質磊晶成長的厚度為10 μm以上，最高磊晶速率可達3.3 nm/sec，鍺膜可同異質磊晶成長的厚度至少6 μm以上，其磊晶速率為1.57 nm/sec。藉此磊晶法在p型基板上形成350 nm的n+層，以製作n+-p接面二極體，其理想因子(Ideality Factor)為1.62、on/off電流比達5.6個等級。另外本論文利用濺鍍法可直接沉積得到矽奈米顆粒之結構，奈米顆粒的直徑大小可藉由改變矽膜厚度來控制，其直徑大小的分佈範圍約為200 nm - 1200 nm，各個不同的矽膜厚度下之奈米顆粒其大小相當均一。

Homo- and hetero-epitaxy of Si and Ge films were realized by using DC magnetron sputtering in this article. Si and Ge films have been homo- and hetero-epitaxially grown on Si substrates, and the Ge films also can be homoepitaxially grown on Ge substrates. The influences of substrate temperature, deposition pressure and discharge power on epitaxial Si or Ge films were explored in this study. Si films at least 10 μm can be grown homoepitaxially on Si substrates at substrate temperature of 175℃ with a highest growth rate as high as 3.3 nm/sec. Ge films can be epitaxially grown on Ge or Si substrates more than 6 μm at 175℃, the epitaxial growth rate is as high as 1.57 nm/sec. The n+-p junction was formed by epitaxilly growing 350 nm-thick n+-Si epi-layer on p-type wafer using sputtering epitaxial method. The ideality factor is 1.62 and the on/off current ratio is 5.6 orders. In addition, the structure of Si nano-particle was obtained by directly sputtering deposition. The size of nano-particles can be controlled by changing the thickness of Si films, its diameter ranging from 200 nm to 1200 nm. The nano-particles which were grown with different thickness were relatively uniform.

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