本研究目的主要在進行後段導線製程 (Back End of Line, BEOL)中，銅導線的化學機械拋光之化學能與機械能佔比分析。由銅膜晶圓、鉭膜晶圓之化學機械拋光製程實驗，藉由集合式電錶即時觀測輸入進CMP機台中的能量，配合量測製程中的溫度，架設出能夠分析製程能量的系統。實驗以三部分進行，實驗A觀測電源輸入與溫度測量的精度，結果顯示溫度量測容易散失，因此以觀測電源輸入作為後續分析的主要方式。實驗B以IC1000進行Cu-CMP時進行測量，結果顯示為化學能量為71.28 %及機械能量為28.72 %。而進行Ta-CMP時，則化學能量為14.63 %及機械能量為85.37 %。再以H800進行Cu-CMP時，其化學能量為87.22 %及機械能量為12.78 %，進行Ta-CMP時，其化學能量為39.45 %及機械能量為60.55 %。實驗C則是基於前述實驗做延伸進行ICSU與 H7000N之能量分析，可以得知增加硬墊的壓縮性及壓縮回彈率，能夠使硬墊更有效的涵養拋光液，使得化學能量增多，增加晶圓表面品質，降低軟墊的壓縮性及壓縮回彈率並增加拋光墊硬度，在稍為減少涵養能力下，能夠使軟墊更有效的增加表面的機械性能增加，使得CMP後晶圓的粗糙度獲得優化。

The main purpose of this research is to analyze the proportion of chemical and mechanical in CMP of Back End of Line (BEOL). This research aims to establish a system for analyzing the energy of the chemical mechanical polishing process experiments which conduct the Cu-CMP and the Ta-CMP, by the integrated electric meter to detect energies that entry the CMP machine, in cooperation with the measurement of the temperatures in CMP process. The experiment is carried out in three phases. First, Experiment A observes the accuracy of power input and temperature. Results show that temperature measurement is easy to lose. Therefore, observation of power input is the main method of subsequent analysis. Experiment B is that IC1000 & H800 pad used for Cu-CMP which chemical energy is 71.28 % & 87.22% and mechanical energy is 28.72 % & 12.78%, individually. When Ta-CMP is performed, its chemical energy is 14.63 % & 39.45% and its mechanical energy is 85.67 % & 60.55 %, respectively. Third, Experiment C is for analysis of ICSU and H7000N for CMP energy distribution. It can be seen that increasing the compressibility and compressibility recovery ratio of the hard pad can make the hard pad more effectively conserving the polishing liquid, and it can also increase the chemical energy and the surface quality of the wafer. However, if the compressibility of the soft pad decreases and increases the compressibility recovery ratio and the hardness of polishing pad with a slight reduction in the conservation ability, the, soft pad increases mechanical properties of the surface more effectively and then optimizes the wafer roughness after CMP.

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