研究生: |
蕭百成 Bai-Cheng Xiao |
---|---|
論文名稱: |
銅化學機械平坦化之軟拋光墊性能指標分析研究 Analysis on Performance Index of Fine Polishing Pad for Copper CMP Process |
指導教授: |
陳炤彰
Chao-Chang Chen |
口試委員: |
趙崇禮
Choung-Lii Chao 顧逸霞 Yi-Sha Ku 吳昌謀 Chang-Mou Wu 周育任 Yu-Jen Chou 陳炤彰 Chao-Chang Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2019 |
畢業學年度: | 107 |
語文別: | 中文 |
論文頁數: | 186 |
中文關鍵詞: | 拋光墊 、選擇比 、銅膜化學機械拋光 、阻障層膜化學機械拋光 、銅圖案化學機械拋光 |
外文關鍵詞: | Pad, Selectivity, Cu CMP, Barrier CMP, Cu pattern CMP |
相關次數: | 點閱:212 下載:1 |
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隨著半導體元件金屬導線製程不斷微細化追求更高解析度的技術。化學機械拋光平坦化(Chemical Mechanical Polishing/Planarization, CMP)不斷面臨許多挑戰。CMP製程能有效提升晶圓表面平坦度與表面品質,因此選用適當的影響因子能降低製程中導線的刮傷(Scratch)、壓痕(Indentation),或拋光後拋光墊物理特性對導線上形成的Dishing(導線凹陷)與Erosion(介電質腐蝕)現象。本研究主要探討精拋墊之物理特性在後段導線(BEOL)拋光後對導線上Dishing與Erosion之影響因子。本研究分為三部份:首先針對精拋墊特殊表面進行微結構觀察與機械性質量測,量測項目包含:壓縮性、壓縮回彈率、硬度、承載比,並進行精拋墊之量測結果分析;第二部分為透過不同製程參數進行銅膜晶圓與阻障層膜晶圓之化學機械拋光,並探討材料移除率(MRR)、材料選擇比與拋光墊特性相關分析,實驗結果顯示移除率與壓縮回彈率和承載比呈現正比,材料選擇比與壓縮率和承載比的反應區Sk呈現高度正相關性。最後,將各款精拋墊應用於銅圖案晶圓化學機械拋光實驗,探討銅圖案化晶圓拋光後的Dishing與Erosion與拋光墊物理性質之相關性,實驗結果顯示要降低銅導線之凹陷(Dishing),與孔洞大小、壓縮率與壓縮回彈率有著高度相關性;要使介電質腐蝕(Erosion)降低,與拋光墊上的承載比和壓縮回彈率有著極高的正相關性。研究結果可用於銅拋光選擇比設計拋光墊。
Semiconductor devices recently are consistently heading to achieve higher resolution due to copper wires interconnect in back end of line(BEOL), Chemical Mechanical Polishing/Planarization(CMP) continues to face many challenges to fulfill such demands. The CMP process can effectively improve the flatness and surface quality of wafer and thin film surface. Therefore, the selection of appropriate influencing factors can reduce the scratches and the indentation of the wires in the process. Dishing and erosion phenomena formed on the wires after polishing can be basically caused by the physical properties of the polishing pad. This study mainly investigates the performance index of physical properties of polishing pad on the dishing and erosion on the wire after BEOL Cu CMP. This study is divided into three parts: first, structural observation is performed on the fine polishing pad and the measurement of mechanical properties including compressibility, compression recovery rate, hardness and bearing area ratio. The second part is the CMP of copper film and barrier film wafer through different process parameters and discusses the correlation between material removal rate(MRR), material selection ratio and polishing pad characteristics. Results show that the MRR is proportional to the compression recovery rate and the bearing area ratio, and the selectivity ratio of Cu/Ta and Cu/TaN is highly correlated with the compression ratio and transition section of bearing area ratio(Sk). Finally, the fine polishing pad is applied to the copper pattern CMP experiment to investigate the correlation between dishing, and erosion related to the physical properties of polishing pad after polishing. Results of correlation analysis show that pore size, compression ratio, and compression recovery rate are highly correlated with the dishing of copper wires. Consequently, the bearing area ratio and compression recovery rate are highly correlated with the erosion of copper wire patterns. Result of the study can be used to select from polishing pad to design Cu CMP.
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