晶圓經過化學機械拋光(CMP)製程後，晶圓表面通常殘留大量拋光液中之磨料、金屬離子及其他污染物，若無有效去除CMP製程後之殘留污染物以及拋光所產生之表面損傷，則將影響後續薄膜沈積、微影等製程之良率，因此CMP後清洗製程為應用於CMP製程後的關鍵技術。本研究針對拋光液中能有效降低表面粗糙度之抑制劑進行平坦化製程研究，同時藉由蝕刻實驗得知抑制劑附著的時間參數，以此減少拋光製程時間。將銅膜晶圓以及兩款拋光液應用於CMP製程中，發現1,2,4-Triazole及BTA在相同製程下，添加1,2,4-Triazole抑制劑之銅膜表面平均粗糙度比原先降低28.3%。最終將一般型以及混合型界面活性劑應用於清洗製程中，由結果發現混合型非離子界面活性劑能有效去除1,2,4-Triazole抑制劑，且能保持良好之表面粗糙度。本研究相關成果可驗證拋光液中1,2,4-Triazole抑制劑能提升化學機械平坦化製程之效益，並且發現混合型界面活性劑能有效運用在化學機械拋光後清洗製程，未來研究可著重於1,2,4-Triazole抑制劑應用在不同拋光液基底及溫度的影響。

The wafer surface usually leaves abundant particles, metal ions and contaminations after chemical mechanical polishing (CMP) process. Once each contaminations and the scratches can not be removed clearly, it can affect the following photolithography or doping process. Thus the post clean of CMP process plays a significant role in high volume manufacturing. In this study, 1,2,4-Triazole inhibitor has been investigated for post clean of CMP process and etching experiments can obtain the optimal parameters to reduce the polishing time. Copper blanket wafers are need for testing. Two different kinds of inhibitor 1,2,4-Triazole and BTA have been utilized in slurry for CMP process. Result indicates that the 1,2,4-Triazole inhibitor can obtain better surface roughness Sa reducing 28.3% from 2.47nm to 1.77nm under the same condition of slurry with BTA inhibitor. In addition, result of applying normal nonionic or mix-nonionic surfactant in cleaning procedure indicate that the mix-nonionic surfactant is capable of removing 1,2,4-Triazole inhibitor and maintains the same quality of surface roughness as well. Finally the 1,2,4-Triazole inhibitor is able to improve the efficiency and the mix-nonionic surfactant can be employed in post clean of CMP process. Future study can focus on different slurry and temperature effects on 1,2,4-Triazole inhibitor application.

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