本論文以實驗室自行壓製陶金靶材，採用RF反應式濺鍍法及利用氮氣混入濺鍍氣體進行製備n型的CuSnSO薄膜與p型的CuSnSNO薄膜，並探討靶材中不同SnS含量比例、沉積溫度及氮元素的摻雜對於薄膜品質、電性及光學性質之影響。於本實驗中我們利用EDS、SEM、AFM、XRD、霍爾效應量測儀、UV-vis、LSV線性掃描伏安法及XPS來分析薄膜特性。
實驗中使用自製的陶金靶材，以濺鍍功率70瓦、沉積溫度100 oC並固定氬氣流量，製備不同Sn含量之Sn-x-CuSnSO (x= 0、0.05、0.1與0.3)薄膜。實驗結果顯示，CuSO薄膜呈現柱狀排列而Sn-0.05-CuSnSO、Sn-0.1-CuSnSO與Sn-0.3-CuSnSO薄膜表面形貌皆具有連續性且表面平整。XRD量測得知，Sn-x-CuSnSO (x= 0、0.05、0.1與0.3)薄膜皆為半高寬甚大或結晶性不佳的繞射峰值，且CuSO、Sn-0.05-CuSnSO與Sn-0.1-CuSnSO薄膜主要結構為CuS；Sn-0.3-CuSnSO薄膜主要結構則變為SnS。霍爾效應量測結果得知，當增加Sn含量能有效增加載子遷移率及導電率，在x= 0.1時載子遷移率與導電率皆有最大值，分別為27.4 cm2 V-1 s-1及9.45 S·cm-1，而其載子濃度為2.21018 cm-3。電化學量測發現，隨著Sn含量增加，薄膜回饋的還原電流也隨之降低；光學量測得到薄膜能隙由2.26 eV下降至1.96 eV。
當改變沉積溫度100、200、300與400 oC下製備Sn-x-CuSnSO薄膜(x= 0、0.05、0.1與0.3)，探討沉積溫度對於不同Sn含量之CuSnSO薄膜性質之影響。隨著沉積溫度增加其晶粒大小隨之增大，薄膜的緻密度也隨之提升，表面形貌變平滑。由電性量測結果得知，當沉積溫度為400 oC時，薄膜皆具有最高之載子濃度。另外，透過UV穿透光譜計算薄膜能隙大小，隨著沉積溫度增加薄膜能隙會有略微減小的情形。薄膜回饋的還原電流也隨著溫度增加而降低。
此外，本研究將氮氣混入濺鍍氣體進行氮元素的摻雜，進而比較氮元素對於不同Sn含量之Sn-x-CuSnSNO薄膜(x= 0、0.05、0.1與0.3)性質之影響。在濺鍍時增加氮氣並固定流量，實驗結果顯示在摻雜氮元素之後薄膜中的O與S含量皆下降，且有晶粒細小化現象。電性量測結果得知，薄膜由未摻雜氮之前的n型轉變為p型半導體薄膜，最高載子濃度為5.511016 cm-3，載子遷移率為35.2 cm2V-1s-1，導電率為0.088 S·cm-1。透過UV穿透光譜計算薄膜能隙大小，摻雜氮元素之後，薄膜的能隙隨著Sn含量增加由1.99 eV上升至2.29 eV。

In this research, we successfully deposited n-type CuSnSO and p-type CuSnSNO films by radio-frequency reactive sputtering technique with an Cu-Sn-S-O cermet targets in an Ar/N2 atmosphere. The CuSnSO cermet target was made in our laboratory. In this experiment, we changed the content of SnS in target and the deposition temperature, and added nitrogen into Sn-x-CuSnSO (x= 0, 0.05, 0.1 and 0.3) thin film to observe their effects on morphology, electrical property and optical property of the CuSnSO and CuSnSNO thin films.
Sn-x-CuSnSO (x= 0, 0.03, 0.06 and 0.09) films were deposited on Si (100) substrates at 100 oC with RF output power at 70 watt. The CuSO thin film exhibited a columnar growth characteristic and the morphologies of other Sn-0.05-CuSnSO, Sn-0.1-CuSnSO and Sn-0.3-CuSnSO films were very smooth. The Hall effect measurement results showed that the carrier mobility and conductivity increased while the SnS content increased. For Sn-x-CuSnSO at x=0.1 the maximum carrier mobility and conductivity of 27.4 cm2 V-1 s-1 and 9.45 S·cm-1 were achieved, while with carrier concentration of 2.21018 cm-3. At the higher amount of the SnS in target, the electrochemical reduction current of the film decreased and the optical band gap also decreased from 2.26 to 1.96 eV.
For the the effect of substrate temperature on Sn-x-CuSnSO films, it was observed that the grain size and the density of the film increased and the surface root mean square became smooth at higher growth temperature. For the Hall-effect electrical properties, the 400 oC-deposited film had the highest carrier concentration of Sn-x-CuSnSO (x= 0, 0.03, 0.06 and 0.09) films. It was found that the optical band gap and electrochemical reduction current of the films slightly decreased with increasing substrate temperature.
To study the N-doping effect, the Sn-x-CuSnSO (x= 0, 0.05, 0.1 and 0.3) thin films were nitridized in a N2 plasma. The experimental results showed that the contents of O and S and the grain size in the films decreased after the nitrogen was doped. From the data of electrical measurements, the films transformed from n-type to p-type semiconductor films after incorporating nitrogen into Sn-x-CuSnSO. The CuSnSNO thin films from nitridation of Sn-0.1-CuSnSO reached the highest hole concentration of 5.511016 cm-3, mobility of 35.2 cm2V-1s-1, and conductivity of 0.088 S·cm-1. For the N-doped CuSnSNO film, its opitstical band gap increased from 1.99 to 2.29 eV with the increase in the Sn content.

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