本研究探討以離子束濺鍍法，沉積摻鉺氧化鋅薄膜(Erbium-doped ZnO, EZO)之特性。我們以層狀方式沉積EZO薄膜，藉退火使鉺與氧化鋅混合。實驗中，成功的以325 nm之He-Cd雷射，激發出從鉺能階4I11/2->4I15/2躍遷所發出之980 nm近紅外光(Near-Infrared, NIR)。在XRD分析中發現，部分EZO薄膜之氧化鋅(002)繞射峰值發生位移，產生原因可能是鉺離子進入氧化鋅且取代鋅離子所致，此時之980 nm發光強度較強。由變溫光激螢光量測得知，鉺發光能量可能是從氧化鋅缺陷發光轉移。最佳的退火參數為退火溫度800˚C，退火時間10分鐘，此時有最強的980 nm 發光。當退火溫度超過800˚C，或退火時間拉長至30分鐘時，可能由於鉺擴散至晶粒邊界，導致980 nm發光強度下降，但此時若以氮氣氣氛退火，可使NIR再度增強。若適度增加氧化鋅厚度，則能增強所有溫度之980 nm發光強度！

Erbium-doped ZnO films were deposited by ion-beam sputtering deposition. Alternate ZnO-Er layers were deposited on Si wafers utilizing individual ZnO and Er targets. This allows the mixing of Er into ZnO matrixes by thermal annealing. Under above bandgap excitation, near-infrared (NIR) emission at 980 nm is observed on annealed samples, which is due to the inner 4f transition of Er3+ from 4I11/2 to 4I15/2. XRD analysis indicates a shift of ZnO (002) peak position to larger angle values, which may due to the incorporation of Er ions into ZnO that causes a reduced interplanner distance along the c-axis which enhances NIR emission intensity. Annealing at 800˚C for 10 minutes in atmospheric environment gives the strongest NIR emission. Annealing temperature higher than 800˚C or annealing time longer than 20 minutes causes the NIR emission to decrease, but annealing in nitrogen atmosphere can restore the NIR emission. In all annealing temperature, the 980 nm emission will arise when the ZnO thickness increased adequacy.

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