本研究使用超高頻電漿化學氣相沉積系統來製備微晶矽薄膜，同時利用放射光譜儀來觀測電漿中成分的變化，並將放射光譜儀的量測結果和薄膜的結構特性做比較。並藉由調整電漿功率、反應總壓、上下電極間距、氫氣稀釋比，期望能得到電漿狀態和成長參數的關係。實驗結果發現，放射光譜儀量的量測結果和薄膜的成長速率、結晶比例具有相同的變化趨勢。因此在沉積微晶矽或串連式太陽能電池時，可藉由放射光譜儀直接量測的結果，即時調整實驗參數來得到最適化的沉積條件。

In this thesis, the hydrogenated microcrystalline silicon (μc-Si:H) intrinsic layer was deposited by very-high-frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD). The influence of deposition conditions on VHF plasma were characterized by in-situ optical emission spectroscopy (OES). The effect of varied power density, reaction pressure, distance between parallel electrodes and diluted ratio of hydrogen gases were also investigated. A close relationship between OES intensity and thin film structure was found. Therefore, the optimal deposition conditions can be established by OES.

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