由於能源危機的出現，使得再生能源備受全世界矚目。其中太陽能電池為最具有潛力能取代石化燃料的絕佳選擇之一。在此領域裡，硒化銅銦鎵薄膜太陽能電池已經被研究並使用一段時間了。然而，稀有元素銦和鎵的使用，造成其成本偏高，因而發展出低成本的硒化銅鋅錫嘗試將其取而代之。
本實驗利用濺鍍法，成功製備出CZTSe薄膜太陽能電池。吸收層薄膜的製備是利用DC真空濺鍍系統，以不同組成比例之銅-鋅-錫靶材，濺鍍CZT前驅物於鍍鉬的鈉玻璃基板上，接著再進行不同硒化條件的退火而製得。薄膜的特性藉由X光繞射分析儀(XRD)、場發射掃描式電子顯微鏡(FE-SEM)、能量散射光譜儀(EDS)與霍爾量測等來分析。接著將薄膜製備成太陽能電池元件，其堆疊方式如下，鈉玻璃/Mo (DC, 700 nm)/CZTSe (DC, 1 μm)/CdS (CBD, 70 nm)/i-ZnO (RF, 50 nm)/ITO (RF, 400 nm)/銀。最後利用擬太陽能光測試儀器測試其電池之光電轉換效率。
實驗結果顯示，二階段600 ℃硒化退火1小時後所製備的CZTSe薄膜，其晶粒最佳尺寸約為2 μm~6 μm，且經由XRD及EDS分析可以知道此薄膜為單相CZTSe結構，並具有Cu0.9ZnSnSe2組成比例。以靶材A製得之元件，組成嚴重缺銅，只有得到1.61 %之轉換效率。

靶材B製得之元件，組成稍微富銅，得到2.59 %之轉換效率。靶材C製得之元件，遷移率為38.2 cm2V-1s-1且導電度為12.79 Ω-1cm-1，得到3.72 %之最佳轉換效率。靶材D製得之元件，載子濃度較高，為9.63×1019 cm-3，轉換效率為2.38 %。

Confronting with the problem of energy crisis, the renewable resources have received lots of attention from all over the world. Solar cell is one of the best choices which show a great deal of promise in replacing fossil fuels. In this field, CIGSe thin-film solar cells have been studied and used for a period of time. However, the rare elements, such as indium and gallium, used in CIGSe made its cost get increased. Therefore, low cost Cu2ZnSnSe4 is emerging to try taking the place of it.
In this study, we successfully fabricated CZTSe thin-film solar cell devices by sputtering method. The absorption layers were grown by DC sputtering in vacuum system using Cu-Zn-Sn targets with different compositions to deposit CZT precursors on Mo-coated soda-lime glass (SLG) substrates followed by different selenization conditions. The characterizations of thin films were analyzed by X-ray diffractometer (XRD), field-emission scanning electron microscope (FE-SEM) epuipped with an energy dispersive X-ray spectrometer (EDS), and Hall measurement. Solar cells were then fabricated with the device stacks consisting of the following: SLG/Mo (DC, 700nm)/CZTSe (DC, 1μm)/CdS (CBD, 70nm)/i-ZnO (RF, 50nm)/ITO(RF, 400nm)/Ag
The performance of the device was then evaluated under the standard AM 1.5 illumination.
The results showed that CZTSe thin films which were made by a two-step selenization process at 600 ℃for 1 hr had grain size of 2 μm~6 μm. XRD and EDS analyses demonstrated that the films were single phase with the close component of Cu0.9ZnSnSe2.
Device made by target A contained Cu-poor CZTSe as an absorber. This device only got 1.61 % conversion efficiency. Device made by target B had the slightly Cu-rich component and it reached 2.95 % conversion efficiency. Device made by target C had the mobility of 38.2 cm2V-1s-1 and conductivity of 12.79 Ω-1cm-1 for its absorber layer. Its electrical properties are suitable for solar cells, which leads to the best conversion efficiency of 3.72 %. Device made by target D had the absorber with high carrier concentration of 9.63×1019 cm-3 and had its lower conversion efficiency of 2.38 % than that from target C.

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