近年來，研究者紛紛進行CIGSe太陽能薄膜電池非真空製備的研究，非真空製備方法極多，但其薄膜緻密程度為決定光電轉換效率的關鍵性。
本實驗利用油墨網印法製備銅銦鎵硒薄膜太陽能電池，以不同組成模式(CIGS、Cu2Se、In2Se3、Ga2Se3及Se)配製油墨，且固定薄膜比例為Cu0.8In0.7Ga0.3Se2，藉由適當的液相燒結的方式(一階段和兩階段)搭配不同的液相燒結溫度及冷壓與否對銅銦鎵硒吸收層之特性的影響進行探討，並且透過FE-SEM、XRD及EDS分析銅銦鎵硒之吸收層物理性質。將其各參數製備成元件(Ag/退火/ITO(RF，500 nm)/i-ZnO(RF，50 nm)/CdS(CBD，70 nm)/液相燒結/CIGSe(Printed screen，5 μm)/Mo(DC，800 nm)/Al2O3)，利用擬太陽能光測試儀器測試其電池之轉換效率。
經過實驗的顯示結果，網印後且冷壓之兩階段液相燒結的方式(第一階段300 oC，第二階段700 oC~750 oC)所製備之吸收層性質其晶粒為最佳，晶粒大小約為600~700 nm，經由XRD及EDS都可以證明此薄膜為Cu0.8In0.7Ga0.3Se2比例。將不同的組成參數製備元件，三相搭配單相和單相分別可量測出1.1 %及1.5 %的光電轉換效率。

The non-vacuum processes for Cu(In,Ga)Se2(CIGSe) solar cells have gradually attracted the researchers’ attentions. However, the major problem of the non-vacuum processes is the densification and the purity of the p-type absorption layer.
In this study, CIGSe thin film solar cells were prepared by using ink-printing on alumina substrates. The p-type layers with the composition of Cu0.8In0.7Ga0.3Se2 were prepared from the inks containing the single-phase CIGSe powder, the mixed powder of Cu2Se, In2Se3, and Ga2Se3, and the mixture of single-phase powder and the mixed powder at the weight ratio of 50:50. The densification involves the one-step and two-step processes at different sintering temperatures. Some of the specimens were underwent the constrained sintering. The CIGSe solar cell was constituted with the stacking form of Ag/ITO/ZnO/CdS/ink-printing CIGSe/Mo/Al2O3. The quality of the absorption layer was analyzed by X-ray diffractometer and field emission of scanning electron microscope equipped with energy dispersive X-ray spectrometer. The performance of the solar cells was evaluated under the standard AM1.5 illumination.
The experimental results showed that the best condition for the ink-printing CIGSe thin film with a thickness of 5 um was using the two-step process and the single-phase powder, sintering at 700–750 oC, and undergoing constrained sintering. The CIGSe films had the desired composition, good crystallinity, and the grain size of 600–700 nm. The stacked solar cells displayed the power conversion efficiencies of 1.1% and 1.5% for the cells with the CIGSe layers prepared from the 50/50 powder and the single-phase powder.

1
京都議定書
2
柯志昇，綠色能源當道-全球太陽能電池市場與產業發展趨勢分析
3
H. J. Moller , Semiconductor For Solar Cell, Landon, Artech House, 1993
4
李芳存，”以硒化銦和硒化銅作為緩衝層之硒化銅銦鎵薄膜太陽能電池” 國 立
中 央 大 學 電 機 工 程 研 究 所，碩 士 論 文，(2009)
5
Friedrich Kessler, Dominik Rudmann. ” Technological aspects of flexible CIGS
solar cells and modules ” Solar Energy 77 (2004) 685–695.
6
黃偉倫，”能帶偏移與缺陷參數對CIGS 太陽能薄膜電池影響之數值模擬”國立
東華大學光電工程研究所，碩士論文，(2009)
7
S. Pookpanratana,_ I. Repins, M. Bar, L. Weinhardt, Y. Zhang, R. Felix, M. Blum,
W. Yang,and C. Heske” CdS/Cu(In,Ga)Se2 interface formation in high-efficiency
thin film solar cells” APPLIED PHYSICS LETTERS 97, 074101 _2010_
8
L. Weinhardt, M. Bar, S. Pookpanratana, M. Morkel, T. P. Niesen, F. Karg, K.
Ramanathan, M. A. Contreras, R. Noufi, E. Umbach, and C. Heske” Sulfur
gradient-driven Se diffusion at the CdS/CuIn(S,Se)2 solar cell interface” APPLIED PHYSICS LETTERS 96, 182102 _2010_
9
A. Romeo, M. Terheggen, D. Abou-Ras, D. L. Batzner, F. J. Haug, M. Kalin, D.
Rudmann, A. N. Tiwari, Prog. Photovolt., 12 (2004) 93.
10
Ingrid Repins , y , Miguel A. Contreras , Brian Egaas, Clay DeHart, John Scharf, Craig L. Perkins,Bobby To and Rommel Noufi.”19.9%-efficient
ZnO/CdS/CuInGaSe2 Solar Cell with 81.2% Fill Factorz” Prog. Photovolt: Res.
Appl. 2008; 16:235–239.
11
Kannan Ramanathan, Miguel A. Contreras, Craig L. Perkins, Sally Asher, Falah S.
Hasoon, James Keane, David Young, Manuel Romero, Wyatt Metzger, Rommel
Noufi, James Ward and Anna Duda, ” Properties of 19_2% Efficiency
ZnO/CdS/CuInGaSe2 Thin-film Solar Cells” Prog. Photovolt: Res. Appl. 2003;
11:225–230 (DOI: 10.1002/pip.494)
12
G.S. Chen , J.C.Yang , Y.C.Chan , L.C.Yang , WelsonHuang, ” Another route to
fabricate single-phase chalcogenides by post-selenization of Cu–In–Ga precursors
sputter deposited from a single ternary target,” Solar Energy Materials & Solar Cells 93 (2009) 1351–1355
13
Min Sik Kim, R. B. V. Chalapathy, Kyung Hoon Yoon, and Byung Tae Ahn, ”
Grain Growth Enhancement and Ga Distribution of Cu„In0.7Ga0.3…Se2 Film
Using Cu2Se Layer on Cu–In–Ga Metal Precursor” Journal of The
Electrochemical Society, 157 _1_ B154-B158 _2010_
14
HWang, Y Zhang, X L Kou, Y A Cai,W Liu, T Yu, J B Pang, C J Li and Y Sun, ”
Effect of substrate temperature on the structural and electrical properties of CIGS 110 films based on the one-stage co-evaporation process ” Semicond. Sci. Technol. 25 (2010) 055007
15
P.J. Sebastian, M.E. Calixto R.N. Bhattacharya Rommel Nou, ” CIS and CIGS
based photovoltaic structures developed from electrodeposited precursors” Solar Energy Materials & Solar Cells 59 (1999) 125}135.
16
R.N. Bhattacharya, J.F. Hiltner, W. Batchelor, M.A. Contreras, R.N. Noufi, J.R.
Sites. ” 15.4% CuIn1-xGaxSe2-based photovoltaic cells from solution-based
precursor films”. Thin Solid Films 361±362 (2000) 396±399.
17
Jung-Min Cho, Chang-Woo Ham, Eun-Jin Bae, Jeong-Dae Suh and Ki-Bong
Song, ” CIGS Thin Film Fabrication Using Spray Deposition Method”
18
Qijie Guo, Grayson M. Ford, Hugh W. Hillhouse, and Rakesh Agrawal.” Sulfide
Nanocrystal Inks for Dense Cu(In1-xGax)(S1-ySey)2 Absorber Films and Their
Photovoltaic Performance”NANO LETTERS 2009 Vol.9，No.8 3060-3065
19
Jong WonPark, YoungWooChoi, EunjooLee, OhShimJoo, SunghoYoon,
ByoungKounMin. ” Synthesis of CIGS absorber layers via a paste coating ”
Journal of Crystal Growth 311 (2009) 2621–2625
20
SeJin Ahn, ChaeWoong Kim, Jae Ho Yun, Jihye Gwak, Sunho Jeong,
Beyong-Hwan Ryu, and KyungHoon Yoon. ” CuInSe2 (CIS) Thin Film Solar
Cells by Direct Coating and Selenization of Solution Precursors ” J. Phys. Chem. C
2010, 114, 8108–8113
21 Matthew G. Panthani,Vahid Akhavan,Brian Goodfellow, Johanna P. Schmidtke,
Lawrence Dunn, Ananth Dodabalapur,Paul F. Barbara, and Brian A. Korgel，
“Synthesis of CuInS2, CuInSe2, and Cu(InxGa1-x)Se2 (CIGS) Nanocrystal “Inks”
for Printable Photovoltaics” 2008 JOURNAL OF THE AMERICAN CHEMICAL
SOCIETY.
22
David B. Mitzi, Min Yuan, Wei Liu, Andrew J. Kellock, S. Jay Chey, Lynne
Gignac, Alex G. Schrott，“Hydrazine-based deposition route for device-quality
CIGS films” Thin Solid Films 517 2009 2158–2162
23
Min Yuan, David B. Mitzi , Oki Gunawan , Andrew J. Kellock , S. Jay Chey ,
Vaughn R. Deline，“Antimony assisted low-temperature processing of CuIn1−
xGaxSe2−ySy solar cells” Thin Solid Films 519 2010 852–856
24
吳先本，“濺鍍法製備硒化銅錫鋅薄膜太陽能電池及其分析”國立台灣科技大
學，碩士學位論文，2009.
25
張振昌，“化學水浴沉積法成長硫化鎘薄膜之研究”國立中山大學材料科學研
究所，碩士學位論文，(2006).
26
Li Zhang, QingHe, Wei-LongJiang, Fang-FangLiu,Chang-JianLi,YunSun，“Effects
of substrate temperature on the structural and electrical properties of Cu(In,Ga)Se2 thin films” Solar Energy Materials & Solar Cells 93 2009 114–118
27
David B. Mitzi, Min Yuan, Wei Liu, Andrew J. Kellock, S. Jay Chey, Lynne 111
Gignac, Alex G. Schrott，“Hydrazine-based deposition route for device-quality
CIGS films” Thin Solid Films 517 2009 2158–2162
28
Jong WonPark, YoungWooChoi, EunjooLee, OhShimJoo, SunghoYoon,
ByoungKounMin. ” Synthesis of CIGS absorber layers via a paste coating ”
Journal of Crystal Growth 311 2009 2621–2625