本研究成功的以RF反應式濺鍍法來製備III族氮化物薄膜，如GaN與InGaN等薄膜，濺鍍所需要的靶材則是將不同比例的金屬In、Ga與GaN陶瓷粉末混合後熱壓而成的陶金靶，靶材中的Ga含量需小於GaN含量，避免在熱壓及濺鍍時造成Ga溢流出靶材。除此之外我們將不同含量的金屬Mg粉摻雜進入GaN靶材中，製備出p型的GaN薄膜，最後再將GaN薄膜與摻雜Mg的GaN薄膜堆疊製作成GaN二極體觀察其電特性。於本研究中我們利用EDS、SEM、AFM、XRD、霍爾效應量測儀、UV與PL等儀器來分析薄膜特性，所以本論文的研究主要可以分成四個部分。
第一部分為利用RF反應式濺鍍法在Si基板上製備GaN薄膜，使用的靶材為Ga + GaN陶金靶，沉積溫度為100 – 400 oC，XRD分析顯示薄膜沿著(10-10)結晶平面成長，屬於纖維鋅礦結構。從霍爾效應量測結果可以得知GaN薄膜的電子濃度為9.61 x 1018 – 1.04 x 1018 cm-3。從UV吸收光譜計算GaN的能隙約為3.0 eV，小於典型GaN的能隙3.4 eV。同時我們也將此薄膜在氮氣氣氛下以900 oC退火1小時，退火後的GaN薄膜特性並無太大改變，證明本研究的GaN薄膜具有良好的熱穩定性。
第二部分為利用RF反應式濺鍍法在SiO2/Si基板上製備InxGa1-xN薄膜(x = 0.25與0.5)，使用靶材為In + Ga + GaN陶金靶，沉積溫度為100 – 400 oC，XRD分析顯示薄膜沿著(10-10)結晶平面成長，屬於纖維鋅礦結構，此繞射峰會隨著薄膜內In含量增加而往低角度偏移。從霍爾效應量測結果可以得知InxGa1-xN薄膜的電子濃度皆在1019 cm-3以上，其電子遷移率從12.1 cm2∙V-1∙s-1下降至5.9 cm2∙V-1∙s-1。而從PL分析中可以得知In0.25Ga0.75N的發光波段為藍光，In0.5Ga0.5N發光波段為綠光，顯示InN與GaN完全固溶形成InGaN三元合金系統。
第三部分為利用RF反應式濺鍍法在Si基板上製備Mg-x GaN薄膜(x = 0.05、0.1與0.5)，使用靶材為Mg + Ga + GaN陶金靶，沉積溫度為400 oC，並在濺鍍時固定氬氣與改變氮氣的流量，觀察改變氮氣流量對薄膜造成的影響，從霍爾效應量測結果可以得知當x = 0.1時，薄膜不需要經過退火程序即可從n型轉變為p型半導體薄膜，電洞濃度為9.37 x 1016 cm-3，遷移率為345 cm2∙V-1∙s-1，導電率為3.23 S∙cm-1。從UV吸收光譜計算Mg-x GaN的能隙約為3.06 – 2.93 eV。
第四部份則是利用RF反應式濺鍍法將GaN與Mg-GaN薄膜在Pt/Si基板上製備成GaN二極體，同時我們將此二極體在500 oC與氮氣氣氛下退火1小時，並在室溫下量測其電壓-電流曲線，退火前後的二極體都具有良好的整流作用，即使逆向偏壓增加至20 V仍沒有崩潰現象出現，此GaN二極體的理想因子在退火前後其值分別為5.0與4.9，而能障高在退火前後其值分別為0.62與0.64 eV，證明此二極體的性質相當優良。

In this research, we successfully deposited GaN and InGaN films by RF sputtering with single cermet targets. The targets were made by hot pressing the powder mixture of metallic Ga and In and ceramic GaN. The Ga content in targets was less than the GaN content to avoid the outflow of viscous Ga during hot pressing and sputtering. In addition, we had doped Mg into the GaN cermet target and successfully deposited p-type GaN films by RF sputtering. All the thin films were analysised by EDS, SEM, AFM, XRD, Hall Effect measurement, UV and PL. This study was divided into four parts.
The first part is about GaN films. The GaN films were deposited on Si substrate by RF sputtering with single (Ga + GaN) cermet target. The deposition temperature was 100 – 400 oC. The XRD results indicated that the GaN films had a wurtzite crystalline structure and grew preferentially with the (10-10) crystal plane. The carrier concentration of GaN films were 9.61 x 1018 – 1.04 x 1018 cm-3. The energy bandgap of GaN films was ~3.0 eV which small than 3.4 eV for the typical GaN. After 900 oC annealing in N2 atmophsere, the GaN films still exhibited excellect thermal stability.
The second part is about InxGa1-xN films (x = 0.25 and 0.5). The InxGa1-xN films were deposited on SiO2/Si substrate by RF sputtering with single (In + Ga + GaN) cermet target. The deposition temperature was 100 – 400 oC. The XRD results indicated that the InxGa1-xN films films had a wurtzite crystalline structure and grew preferentially with the (10-10) crystal plane. With increasing In content, the 2 peak position gradually shifted to lower angle. All the InxGa1-xN films had a high carrier concentration above 1019 cm-3. The mobility of InxGa1-xN films were decreased from 12.1 to 5.9 cm2∙V-1∙s-1. The PL showed that InxGa1-xN had blue and green light-emitting capabilities.
The third part is about Mg-x GaN films (x = 0.05, 0.1 and 0.15). The Mg-x GaN films were deposited on Si substrate by RF sputtering with single (Mg + Ga + GaN) cermet target. The deposition temperature was 400 oC. We also changed the Ar/N2 flex during the sputtering to investigate the properties of Mg-GaN films. As x = 0.1, the film has transformed into p-type conductivity and has the carrier concentration of 9.37 x 1016 cm-3, the highest mobility of 344.6 cm2∙V-1∙s-1, and the highest conductivity of 3.23 S∙cm-1. The energy bandgap of Mg-GaN films were 3.06 – 2.93 eV.
The final part is about GaN p-n diode. The p-n diode was made on Pt/Si substrate by RF sputtering. The p-n diode was annealed at 500 oC in N2 atmophsere for 1 hr. The current-voltage (I-V) curves of the as-grown and 500 oC-annealed p-n diode tested at room temperature. The I-V curve exhibited exllent rectifying behavior. There were no irreversible breakdowns occurred, though the reverse voltage has increased to 20 V. The ideality factors of the as-grown and 500 oC-annealed diodes were 5.0 and 4.9, respectively. The barrier heights of the as-grown and annealed diodes were 0.62 eV and 0.64 eV, respectively.

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