本論文在探討利用化學氣相沉積法來成長二硫化鉬和二硫化鎢於石英和藍寶石基板上。利用拉曼散射，X射線衍射譜線，光致發光光譜和原子力顯微鏡的技術，來進行材料特性的檢測。X射線衍射譜線觀察到成長在藍寶石(0001)上的二硫化鉬有強烈的C面（002）訊號，但在較短的成長時間會有氧化鉬（002）訊號顯現。在塊材的MoS2和WS2的拉曼光譜具有兩個主要活性模式： A1g (408cm cm-1)及E12g (382 cm-1)而在WS2分別為A1g (420 cm-1和)和E12g (355 cm-1)。在E2g振動模態對應於硫原子與另一個鉬(鎢)原子的振動，而A1g模式是硫原子振動模態。在接近單層的二硫化鉬及二硫化鎢（低於五層）這兩種振動模態與厚度有強烈的相依性。在A1g和E12g位置之間差縮小的趨勢。在原子力顯微鏡圖上示成長出來的WS2呈片狀的三角形形貌，其中隨著成長時間厚度會增加。但是，在二硫化鉬並未發現這樣的行為。同時，藉由光致發光光譜量測成長在藍寶石基板上的二硫化鎢和二硫化鉬光學性質。發現到在低於五層下的樣品觀察到，二硫化鎢和二硫化鉬直接躍遷訊號分別在1.99 eV和1.85 eV。

The theme of this thesis is focused on the growth and analysis in the MoS2 and WS2 multilayer crystal on Quartz and Sapphire substrate grown by chemical vapor deposition (CVD). Detailed characterizations of the materials were carried out by using X-ray diffraction (XRD), Raman scattering, atomic force microscopy (AFM), and photoluminescence (PL) techniques. XRD analysis observe that MoS2/Sapphire is of c-plane (002) and MoO3 (002) peak, while dependent by growth time. The two main active modes A1g and E2g of bulk MoS2/WS2 in Raman spectrum are 408cm-1/420cm-1 and 382cm-1/355cm-1, respectively. The E2g mode corresponds to the sulfur atoms vibrating in one direction and the Molybdenum or tungsten atom in the other, while the A1g mode is a mode of the sulfur atoms vibrating out-of-plane. When the thickness of MoS2 in multilayer (less ~five layers), these two modes becomes thickness dependent. The separation between the A1g and the E2g is smaller than that in bulk. Illustrated by AFM, shows the thickness of triangle WS2 flake increases with increasing growth time. Whereas, such growth mechanism are not observed in MoS2.The optical properties of WS2 and MoS2 grown on sapphire were also investigated by PL. The luminescence detected by (PL) indicates the transition is direct behavior with multilayer (less than five layers) thickness. The room temperature direct transition of WS2 and MoS2 were determined to be 1.99 eV and 1.85 eV.

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