隨著科技日新月異地進步，從今日的12吋晶圓至未來即將進入的新世代18吋晶圓，半導體產品已成為人類的生活不可或缺之必需品，並隨著曝光微影的線寬持續降低，化學機械平坦化已成為半導體製程中關鍵的技術。而製程中最主要的消耗品即為鑽石修整器及拋光墊，因此兩者間的加工模式已成各廠商爭相研究的關鍵技術。由於拋光墊為具有壓縮性的彈性體而非剛體，因此在修整器對拋光墊的移除機制研究上較為困難，為了瞭解鑽石對於拋光墊的加工機制，本研究建立鑽石修整模型對鑽石壓入深度進行估算，再透過五顆鑽石呈一直線等距排列之修整器，對實心且無孔隙之聚氨酯拋光墊進行修整，以探討鑽石之工作機制，在本研究參數操作下，在初始修整時其工作機制將以犁削機制為主，且較重的下壓力將會使拋光墊較容易產生塑性變形，而造成較高的犁削比。另透過收集修整切屑進行剪切角分析，在下壓力5psi下具有較大的剪切角，使之具有較佳的排屑能力及較小的排屑阻力，進而轉以切削機制為主來移除材料，並透過切屑觀察可得知修整切屑主要為連續切屑，但過高的下壓力10psi下，其將產生不連續的塑性變形之切屑，本研究結果可應用於拋光墊修整模式建立及鑽石修整器設計。

Because of rapid development of new technology, the wafer size has been enlarged from 12 to 18 inch in near future, and the semiconductor products have become essential for industry. With the decreasing of line width of integrated circuit, chemical mechanical planarization (CMP) process has become a critical technique in semiconductor manufacturing. The diamond dressing model with polishing pad of CMP has recently been concentrated for improving CMP efficiency. The polishing pad is a compressible and elastic material. This study aims to establish a dressing model and evaluate the plowing ratio and chip thickness generated by a special designed diamond dresser. The solid and non-porous polyurethane polishing pad and the dresser with 5 line-up diamond dresser are used to investigate the pad plowing effect in dressing process. Experimental results have shown that the plowing initially controls the dressing mechanism. Initial higher pressures such as 5psi and 10psi makes the pad material to deform easily compared with that of a lower pressure 2.5psi. With 5 psi down pressure, the diamond grit has the highest shear angle to remove chip from pad surface easily. In the SEM observation, the chips at 2.5psi and 5psi are continuous, but the chip at 10psi is discontinuous and thicker. Also the chip at 10psi looks like to have a plastic deformation due to the high pressure applied. Result of this study can be further need for constructing pad dressing model and diamond dresser design.

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