本研究透過自行開發與改良的彩色共軛焦量測系統進行修整製程中，拋光墊表面形貌的量測；此外透過拋光墊修整軌跡模擬軟體，評估拋光墊之修整均勻性。實驗方法為固定修整器轉速15, 40, 65rpm對於拋光盤進行修整，探討實驗後拋光墊修整指標相關性。根據指標相關性係數，實驗A結果拋光墊表面粗糙度的變化對於製程參數具有趨勢性的變化，主要和拋光墊表面非均勻性有關，於修整器轉速為15rpm且拋光盤轉速40rpm為非整除數時，能完整地修整全部拋光墊表面，造成拋光墊表面粗糙度提高而拋光墊之表面粗糙度能作為銅膜晶圓判斷表面非均勻性的指標。實驗B銅圖案化晶圓拋光時間的判斷，最後選用拋光製程為10分鐘，以獲得50%的銅圖案化晶圓拋光面積進行實驗。實驗C將彩色共軛焦量測系統應用於銅圖案化晶圓透過指標相關性分析得拋光製程中產生凹陷及侵蝕的變化與拋光墊Spk指標有-0.4到-0.7間的中度指標相關性。實驗D由固定修整器轉速15rpm進行拋光100片晶圓的馬拉松實驗，得銅膜晶圓的材料移除率與非均勻性對於承載比中的反應區(Spk)分別具有高度(-0.74)和中度(-0.41)相關性指標；銅膜晶圓之表面粗糙度對於拋光墊的Sz具有高度(-0.75)指標相關性。此兩套模擬系統，能觀察與驗證拋光墊表面粗糙度與非均勻性，對應晶圓之指標相關性，未來可將此系統應用於需精準控制之拋光製程環境上。

This study focuses on the In-Situ chromatic confocal system and correlation between pad dressing performance and the Cu- CMP process with different pad dressing parameters. Changing dresser head rotation speeds (15, 40, and 65 rpm) yields different levels of pad roughness and also creates a different Cu blanket wafer uniformity index for pad roughness in each run. From results of Experiment A, the surface roughness of polishing pads changes with CMP parameters, mainly according to pad non-uniformity. Experiment B estimate CMP time for Cu pattern wafer, it takes about 10 minutes for exposing 50% pattern area. Apply it the chromatic confocal system to copper pattern wafer CMP of Experiment C, the relation between dishing and erosion effect with Spk is -0.4 to -0.7. Experiment D is a marathon test of 100 pieces of copper blanket wafer CMP under 15 rpm. Results show that the MRR and N.U. are highly related to Spk, while the surface roughness is highly related to Sz. By such chromatic confocal system and developes pad uniformity simulation program, pad roughness can be measured and then pad uniformity index can be predicted. Results of this study can be further applied on In-line Cu CMP process control for advanced node demands.

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