在本論文中，我們研究使用微波輔助化學氣相沉積系統來成長奈米鑽石薄膜於矽及鈮酸鋰基板上，藉由控制溫度、氣體組成及成長壓力，我們可得到表面平坦且品質良好的鑽石薄膜。
鈮酸鋰有很高的機電耦合係數，和奈米鑽石薄膜整合可得到很高的表面聲波波速與機電轉換效率以適合高頻上的應用。不過，鈮酸鋰與鑽石之間的熱膨脹係數差異太大，造成很大的薄膜應力，很難直接將鑽石薄膜沉積於鈮酸鋰基板上。於是，我們加入一層薄的矽緩衝層以提高鑽石膜與鈮酸鋰之間的黏著性。
根據之前的研究，我們發現多晶矽薄膜比較適合用來整合此架構。廣泛地在薄膜電晶體和低溫多晶矽領域裡使用的技術如固相結晶、快速升溫退火、準分子雷射退火，在本研究中被用來將非晶的矽薄膜轉變成有結晶。我們相信奈米鑽石/矽/鈮酸鋰結構可以得到高的機電偶合係數與表面聲波波速，非常適合在表面聲波元件上應用。

The growth of the nanocrystalline diamond (NCD) films on Si and LiNbO3 (LN) substrates using CH4/H2/O2 in microwave plasma enhanced chemical vapor deposition (MWPECVD) reactor had been investigated in this study. By controlling the temperature, gas composition, and processing pressure during the growth, smooth NCD films of good quality are obtained.
LN has high electromechanical coupling coefficient (K2), which can be integrated with NCD films to achieve fast velocity and large K2 of SAW devices for high frequency applications. However, the large mismatch of thermal expansion coefficient between LN and diamond is the major issue to cause the large stress in the deposited films. So, a thin amorphous Si (α-Si) layer is used to promote a good adhesion between NCD film and LN.
In our previous studies, a poly-Si thin layer is suitable for integrating the structure. Solid Phase Crystallization (SPC), Rapid Thermal Annealing (RTA), and Excimer Laser Annealing (ELA), the techniques widely used in TFT and LTPS fields, are used to convert the thin layer to crystallized one. We believe that the NCD/Si/LN structure is capable of achieving a high K2 and high SAW velocity, which is highly desirable for SAW devices.

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