本論文以本實驗室自行壓製陶金(陶瓷+金屬)靶材，採用RF反應式濺鍍法製備N摻雜的IGZO薄膜，以N取代O的位置，期望提高IGZO薄膜內的氮含量來提升載子遷移率及提升電性穩定性。實驗中，觀察在不同氧氣/氬氣流量、不同氮氣/氬氣流量及不同氧氣/氮氣比例之混合氣體流量的製程條件下，對於薄膜品質、電性及光學性質之影響。於本實驗中我們利用EDS、SEM、XRD、AFM、UV-vis、霍爾效應量測儀、橢圓偏光儀及HR-TEM來分析薄膜特性。
實驗中使用自製的(金屬銦+金屬鋅+氧化銦+氮化鎵)陶金靶材，在濺鍍功率120瓦、沉積溫度400oC、氧氣x sccm、氬氣20-x sccm (x= 5、7.5、10與15)條件下，製備不同N摻雜量之IGZNO薄膜。實驗結果顯示，隨著氧氣流量升高，N摻雜量會隨之降低，其表面形貌皆十分平坦只有些微結晶。所有薄膜在可見光區內皆有85%以上的高穿透率，能隙隨著氧摻雜量的增加而提高。由霍爾效應量測結果得知，摻入N能有效降低載子濃度，氮摻雜量增加載子遷移率隨之提升，在x=7.5時載子遷移率有最大值59.3cm^2V^-1s^-1，載子濃度為2.33x10^15cm^-3，導電率為0.0221S/cm，可見光區之折射率在2.046-2.062之間，可見光通過率達86%。
在濺鍍功率120瓦、沉積溫度400oC、氮氣x sccm、氬氣20-x sccm (x= 2.5、5、10與15)條件下，N摻雜量隨著氮氣流量增加而增加，其薄膜沉積速率逐漸上升，表面形貌變粗糙，結晶性提升，在x= 10、15時轉變為InN為主相的氮化物。在可見光區的穿透率明顯下降，變為不透光，能隙隨著氮氣流量提高而由2.5eV下降至2.06eV。其載子濃度及導電度明顯提升，在x= 15時載子遷移率有最高點35.8cm^2V^-1s^-1、載子濃度為3.36x10^18cm^-3、導電率為19.3S/cm。
在濺鍍功率120瓦、沉積溫度400oC、氧氣x sccm、氮氣(10–x) sccm、氬氣10 sccm (x= 2.5、3.7與 5 )條件下沉積薄膜，隨著氧氣流量提高，氮氣流量下降，薄膜內N摻雜量減少，能隙也隨之上升，其表面形貌及結晶性與通氧氣時相似，十分平坦，當x= 2.5時在可見光區的穿透率為73%，而其餘條件下皆有85%以上的高穿透率，由電性量測結果得知，在x= 3.7時，載子遷移率最大值45.5cm^2V^-1s^-1、載子濃度為2.16x10^16cm^-3、導電率為0.157S/cm、在可見光區的折射率由2.062降為2.048、可見光通過率達85%。

In this thesis, we successfully deposited nitrogen-doped IGZO thin film by radio- frequency reactive sputtering technique with an IGZNO cermet target which was made in our laboratory. The target was made up of indium, indium oxide, zinc, and gallium nitride. We expect oxygen to be replaced with nitrogen for improving the carrier mobility and electrical stability of the IGZO thin film. In this experiment, we changed the atmosphere in the chamber with O2/Ar, N2/Ar and O2/N2/Ar, and varied their flow rates to observe their effects on morphology, electrical property and optical property of the IGZNO thin film.
We deposited IGZNO films at 120 W and 400 oC in gas flow rates of O2 at x sccm with x= 5, 7.5, 10 and 15, and Ar at (20-x) sccm. The N content decreased while the O2 flow increased. The morphologies of all films were very flat. The transmittance reached over 85% and the refractive index were between 2.046-2.062 in visible light range. The band gap slightly increased while the O2 flow increased. From the results of Hall effect measurement, nitrogen doping effectively reduced the carrier concentration and increased the carrier mobility. For IGZNO at x=7.5, we got the maximum carrier mobility of 59.3cm2V-1s-1, while carrier concentration was 2.33x10^15cm-3, conductivity 0.0221S/cm, and the transmittance 86%.
At the second part, we deposited IGZNO films at 120 W and 400 oC in gas flow rates of N2 at x sccm with x= 2.5, 5, 10 and 15, and Ar at (20-x) sccm. The N content increased while the N2 flow increased. The morphology was getting rougher because of crystallinity increasing. The phase of the films became to nitride in InN while reaching x=10 and 15. The transmittance in visible light range decreased and became opaque. While the N2 flow increased, the band gap decreased from 2.5 to 2.06eV. From the results of Hall effect measurement, the carrier concentration and conductivity effectively increased by using N2 as the reaction gas. For IGZNO at x=15, we obtained the maximum carrier mobility 35.8cm2V-1s-1, while carrier concentration was 3.36x10^18cm-3 and conductivity 1.93S/cm.
At the last part, we deposited IGZNO films at 120 W, 400 oC in gas flow rates of O2 at x sccm with x= 2.5, 3.7 and 5, N2 at (10-x) sccm, and Ar at 10 sccm. The N content decreased while the O2 flow increased and the N2 flow decreased. The morphologies of all films were flat, similar to the films deposited by using O2 as the reaction gas. For IGZNO at x= 2.5, the transmittance was 73%, and the others reached over 85% in visible light range. The band gap increased and the refractive index decreased from 2.062 to 2.048 while the O2 flow increased and the N2 flow decreased. For IGZNO film at x=3.7, we achieved the maximum carrier mobility of 45.5cm2V-1s-1, while carrier concentration was 2.16x10^16cm-3, electrical conductivity 0.157S/cm, and the transmittance 85%.

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