本論文使用化學氣相傳導法(Chemical vapor transport, CVT)成長二硫化鉬(Molybdenum disulfide, MoS2)以及二硒化鎢(Tungsten diselenide, WSe2), 經由拉曼和XRD分析確定其材料組成結構並且為2H結構的單晶晶體. 以場效電晶體量測觀察MoS2以及WSe2的電荷中性點確認其半導體特性分別為n型以及p型, 透過機械式剝離法得到n型MoS2及p型WSe2的薄片, 將厚度控制在1-3 μm, 以垂直堆疊的方式製作了pn異質接面二極體, 量測二極體特性曲線以及半波整流實驗, 觀察到在1-6 Vpp及1-1000 Hz的低頻下表現出顯著的整流特性. 另一方面, 藉由氧摻雜的技術可以將n型MoS2轉換成p型MoS2, 並以場效電晶體的量測觀察電荷中性點從-80 V位移至+102 V確定n型MoS2成功地改變為p型MoS2, 進一步透過不鏽鋼基板作為遮罩, 在MoS2的表面製作出pn同質接面二極體, 並量測其二極體特性曲線以及半波整流實驗, 觀察到在1-7 Vpp並且在1-1000 Hz之下皆有優良的整流特性. 最後, 透過氧電漿摻雜, 進一步在MoS2的表面製作出pnp雙極性接面電晶體, 以黃光微影技術定義基極寬度, 經由氧摻雜技術將射極進行重摻雜, 基極保留n型半導體行為, 集極進行輕摻雜, 元件經由量測觀察到擁有穩定的主動區以及飽和區, 電流增益(β)經計算後為1.02. 本實驗成功地將二硫化鉬以及二硒化鎢透過垂直堆疊, 氧電漿摻雜以及黃光微影技術等等簡單的方式, 製作了兩種二極體以及電晶體, 驗證了二維材料中的過渡金屬硫屬化物 (Transition metal dichalcogenides, TMDs)對於研究上以及應用上皆有極大的潛力.

The dissertation demonstrates the fabrication and discusses the characteristics of heterojuction diode, homojunction diode, and bipolar junction transistor (BJT). To start with, WSe2 and MoS2 were grown by chemical vapor transport (CVT). Material composition structure and hexagonal structure of WSe2 and MoS2 were respectively verified through Raman spectroscopy and X-ray diffraction analysis. The semiconductor behaviors of p-type WSe2 and n-type MoS2 were demonstrated by field effect transistor (FET) measurement, respectively. Through mechanical exfoliation, we limited the thickness of WSe2 and MoS2 sheets from 1 to 3 μm, and vertically stacked the sheets to form a pn heterojunction diode, which presented a significant rectification and low cut-in voltage. Indeed, the half-wave rectification experiment indicated that the pn heterojunction diode featured significant rectifying behavior under 1-6 Vpp and 1-1000 Hz. On the other hand, we used the oxygen plasma treatment to transform the characteristics of MoS2 from n-type to p-type and demonstrated the charge neutrality point (CNP) shift from -80 V to +102 V by the FET measurement, successfully. In order to fabricate a pn homojunction diode, we defined the junction on the surface of MoS2 with a mask for doping precisely. The pn homojunction diode shows excellent rectifying behavior with 1-10 Vpp and 1-1000 Hz by the half-wave rectification experiment. Finally, starting from the concept of pn homojunction diode, it is further fabricated into a pnp BJT. The base width of the BJT was defined by photolithography and the behavior of the n-type semiconductor was maintained in the base. Emitter and collector of the BJT were heavily doped p-type and lightly doped p-type with oxygen plasma, respectively. It is observed that it has a stable active region, saturation region, and cut-off region. In this experiment, a variety of transistors were fabricated by using molybdenum disulfide and tungsten diselenide in a simple method through vertical stacking, oxygen plasma doping, and photolithography. The dissertation demonstrates that Transition metal dichalcogenides (TMDs), vertically stacked and doped with oxygen plasma, have great potential for pn diodes which feature significant pn characteristics and rectifying behavior.

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