本研究提出一套新式的「頻差疊紋式表面形貌量測技術」，用以偵測置放於高迴轉速(1500rpm)平台上的藍寶石晶圓表面形貌。此套量測技術以疊紋理論為設計概念，結合雷射準直儀、掃描輪廓法及亞條紋分析法等技術之優點，同時引入閃頻原理的技術理念，使量測系統可應用於高迴轉速的量測條件中。
此套「頻差疊紋式表面形貌量測技術」由一氦氖雷射(或雷射二極體)、一擴束系統、一線性光柵片、一分光鏡、一聚焦透鏡及一電荷耦合元件(Charge-coupled Device)攝影機所組成。藉由擴束系統將雷射光束直徑擴展至兩吋，擴束光穿透線性光柵片後投射於待測藍寶石晶圓基板上，接著反射回原光路架構中，再通過透鏡聚焦於CCD照相機中形成量測光柵影像，同時利用LabVIEW程式語言於電腦端形成參考(數位)光柵影像，最後藉參考及量測光柵影像後形成疊紋條紋影像。當晶圓基板發生翹曲(表面形貌改變)時，疊紋條紋將隨之發生變化，透過頻差觸發法的頻率調控來進一步分析疊紋影像的相位變化量，即可使量測系統量測到晶圓基板表面各偵測點之角度變化量，最後再藉由掃描輪廓法的使用來重建藍寶石基板的表面形貌。
由實驗結果證明，於高迴轉速的條件下，此套「頻差疊紋式表面形貌量測技術」可精準地量測多片待測晶圓基板的表面形貌，其解析度(最小可量得的角度變化量)可達5µrad，量測速度極限為900µrad/s，5分鐘的系統穩定度達0.4µrad以內，量測表面形貌的重現性誤差小於1.08%。此外，本量測系統可實際架設於可視化腔體上進行晶圓基板之表面形貌量測。

A novel technique for surface profile measurement by the frequency difference moiré method for measuring sapphire wafers on top of a high speed rotating platform (1500rpm) is proposed in this study. This measurement technique is based on the moiré method, combining the advantages of laser autocollimators, the scanning profile method, sub-fringe analysis method, as well as the the stroboscopic measurement technique, thereby allowing the system to be applied to samples rotating at high speeds.
The configuration of this technique consists of a He-Ne laser or Laser Diode as light source, a beam expander, a linear grating, a focusing lens, and a Charge-coupled Device camera. The laser beam is first expanded to a diameter of two inches, then projected through the linear grating onto a sapphire wafer, reflected into the focusing lens, which is then captured by CCD camera and converted into moiré fringe in the computer. When wafer warpage happens, the moiré fringe will change accordingly; by analyzing the phase shift of the moiré with the frequency difference method, the system is able to measure the change in angle of all detection points on the surface, and reconstruct the surface profile of the sapphire wafer via the scanning profile method.
The results of our experiments show that this measurement technique can accurately measure the surface profile of multiple sapphire wafers under high speed rotation; it has a resolution of 5 µrad, a speed limit of 900 µrad/s, a system stability of 0.4 µrad within five minutes, as well as being able the reconstruct the topography of the measured surface with an error less than 1.08 percent. This system can also be applied to a visualization chamber for wafer surface structure measurement.

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