在本研究中, 我們以銅箔作為石墨烯之成長基板, 並將銅箔置於可移動式熱化學氣相沉積系統成長石墨烯, 其光穿透率可達85%. 接著, 將最佳化設計之奈米碳管束陣列以熱化學氣相沉積法成長於石墨烯上. 再利用氯化鐵溶液將銅箔去除, 其目的使石墨烯與石墨烯上之奈米碳管束陣列從銅箔上轉移至玻璃基板. 以石墨烯為陽極及石墨烯上之奈米碳管束陣列為場電子發射端, 組合成全碳式場電子發射之元件, 並分析及量測其特性. 本實驗中, 我們定義全碳式場電子發射元件之電流密度達到0.1 mA/cm2時, 其電場為臨界電場. 此元件之臨界電場發生於2.7 V/m. 此外, 在陽極石墨烯塗上螢光粉, 並量測均勻性後呈現出全面螢光現象. 此展現出全碳式場電子發射元件在顯示器應用方面有良好的性質.

In this study, graphene was successfully synthesized on the Cu foil using floating thermal chemical vapor deposition (CVD) system. The transmittance of synthesized graphene achieved over 85%. Further, we successfully grew vertically aligned carbon nanotube (VACNT) bundle arrays onto graphene which was synthesized on the Cu foil using thermal CVD. In order to transfer both graphene and VACNT bundle arrays on graphene from the Cu foil to the glass substrate, the Cu foil was etched by FeCl3 solution. The characteristics of graphene and VACNT on graphene were investigated by Raman spectroscopy, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Graphene as the anode and VACNT bundle arrays on graphene as the field emitter were combined to be the field emission (FE) device. This study defined the threshold field (Eth) as that which corresponded to the FE current density of 0.1 mA/cm2, and the Eth was about 2.7 V/m. Moreover, the fluorescent powder was smeared on the graphene anode to show the uniformly fluorescent screen. The results showed that the all carbon-made FE device exhibited promising the characteristics for FE applications.

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