研究生: |
周首成 Shou cheng Chou |
---|---|
論文名稱: |
以射頻矽甲烷電漿輔助化學氣相沉積法製備非晶矽薄膜太陽能電池元件之研究 Amorphous Silicon Thin Film Solar Cells Prepared by RF SiH4-PECVD System |
指導教授: |
洪儒生
Lu-Sheng Hong |
口試委員: |
魏大欽
Ta-Chin Wei 葉秉慧 Bing-Huei Ye |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2011 |
畢業學年度: | 99 |
語文別: | 中文 |
論文頁數: | 88 |
中文關鍵詞: | 射頻電漿輔助化學氣相沉積 、矽甲烷 、非晶矽 、參雜 、窗口層 、薄膜太陽能電池 |
外文關鍵詞: | RF-PECVD, silane, a-Si:H, doped, window layer, thin film solar cell |
相關次數: | 點閱:413 下載:1 |
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本研究係以射頻矽甲烷電漿輔助化學氣相沉積系統,藉由調配適當的反應參數反應壓力及三甲基硼(TMB)摻雜比等,分別進行本質非晶矽及p型非晶碳化矽薄膜之沉積,並針對薄膜的結構及光電性質加以分析,以探求非晶矽薄膜太陽能電池元件的最適化製程條件。
實驗結果顯示,反應壓力為200 mTorr時所沉積的本質非晶矽薄膜之光學能隙為1.74eV,在電性表現方面,其暗導電率為2.61×10-10 S/cm,且光敏感度達5.03×104。
另一方面,針對p型非晶碳化矽薄膜的製備,以三甲基硼(TMB)至對矽甲烷流量比為3%時,甲烷對矽甲烷流量比為2時,所成長的p型非晶碳化矽薄膜暗導電率為3.1×10-8 S/cm,光學能隙可達到2.12 eV,其電性及光學性質適宜作為非晶矽薄膜太陽能電池元件窗口層的應用。
最後,利用多重腔體連結式PECVD裝置製作單層接面非晶矽薄膜太陽能電池,現階段所得最佳元件之開路電壓、短路電流及填充係數分為811mV、14.81 mA/cm2及64.65 %,光電轉換效率達7.77 %。考慮減少p型層與本質層非晶層的界面復合,於兩者界面加入摻雜程度較低的p-層後,電池元件的開路電壓和短路電流分別提升到840 mV 及 15.46 mA/cm2 且光電轉換效率提升到8.21%
In this thesis, the intrinsic hydrogenated amorphous silicon (a-Si:H) thin films and p-type hydrogenated amorphous silicon carbide (a-SiC:H) thin film were deposited on glass by radio-frequency silane plasma enhanced chemical vapor deposition system. The thin films were prepared under different experimental parameters, such as reaction pressure and TMB flow ratio. For optimization of the layer, the dependence of electrical and optical properties were investigated.
In the first part, we deposited intrinsic a-Si:H by altering the deposition condition. We set up reaction pressure at 200 mTorr, and the optical band gap of the film deposited was 1.74 eV. The dark conductivity and photosensitivity were 2.61×10-10 S/cm and 5.03×104, respectively.
In the second part, we deposited p-type a-SiC:H with silane and TMB. The dark conductivity and optical gap of the film deposited at [TMB]/[SiH4] = 3% were 3.1×10-8 S/cm and 2.12 eV, respectively. The result showed that the films were more transparent than amorphous silicon.
Finally, we deposited amorphous silicon thin film solar cell. The short-circuit current(Jsc), open-circuit voltage(Voc) and fill factor(FF) of device were 14.81 mA/cm2, 811 mV and 64.65 %, respectively. The optoelectronic conversion efficiency of 7.77 % was achieved. And we consider reducing the p/I interface of the rcombination center , so we used low-doped p-layer in the p/I interface .In the result , we deposited amorphous silicon thin film solar cell. The short-circuit current(Jsc), open-circuit voltage(Voc) of device were 15.46 mA/cm2, 840 mV, respectively. The optoelectronic conversion efficiency was up to 8.21 %
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