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研究生： 沈子堯
Tzu-yao Shen
論文名稱： 低溫鋁擴散進入非晶矽形成P型層的技術及其在矽晶異質接合太陽能電池的製作應用
Low-temperature Diffusion of Al into Amorphous Si Layers and its Application in Silicon Heterojunction Solar Cells fabrication
指導教授： 洪儒生
Lu-sheng Hong
口試委員: 李三良
none
葉秉慧
none
學位類別： 碩士
Master
系所名稱： 工程學院 - 化學工程系
Department of Chemical Engineering
論文出版年： 2012
畢業學年度： 100
語文別： 中文
論文頁數： 123
中文關鍵詞： 電漿輔助化學氣相沉積 、氫化非晶矽 、鋁 、鈍化 、異質接合太陽能電池
外文關鍵詞： plasma enhanced CVD, a-Si:H, aluminum, low-temperature thermal diffusion, passivation, heterojunction solar cells
相關次數： 點閱：176  下載：2 
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    • 本研究係利用一低溫鋁擴散於非晶矽膜層使其形成p型多晶矽層之技
    術，作為矽晶異質接合太陽電池製作之應用。以此技術製備p型膜層的實
    驗結顯示，沉積厚度為30nm的非晶矽層與20nm厚的濺鍍鋁層接觸並經
    200℃熱處理30分鐘後，可獲得電阻率為8.45×10-3 Ω-cm的結晶化p型膜
    層。然而在矽晶片上以此p型層單面覆蓋時，矽晶片的有效載子生命週期
    僅為20μs，暗示開路電壓為590mV；當改為局部的p型覆蓋時，在單面覆
    蓋率為17%下，晶片有效載子生命週期為500μs，此時暗示開路電壓可維持
    在685mV。利用全面低溫鋁擴散形成的p型層作為p型矽晶片異質接合太
    陽電池元件的背電場，獲得元件的開路電壓、電流密度及填充因子分別為
    591 mV、29.95 mA/cm2及71.45 %，光電轉換效率可達12.7%。

    A process to form highly Al-doped crystalline Si layers through low-temperature diffusion of Al into hydrogenated amorphous Si (a-Si:H) layers was examined. We found that the conversion of a-Si:H into p+ crystalline Si for the Al/a-Si:H system is affected by the hydrogen incorporation amount of the a-Si:H layers, the thickness of the Al layers, the diffusion temperature, and the treatment time. A typical film resistivity of 8.45×10-3 Ω-cm was obtained after thermal treatment of Al (20nm)/amorphous Si(30nm) for 30 min under 200 oC. Applying the p+ layer thus prepared as the back surface field for p-type mono-crystalline Si hetero-junction solar cell, we achieved a primary cell efficiency of 12.7% on an untextured Si wafer with an open circuit voltage (Voc) of 590 mV. The low cell Voc is most plausibly due to the poor interface between the crystallized p+ doped layer and the Si surface. An attempt to passivate this interface was now underway.

    摘要 ..........................................................................I Abstract...................................................................................................... II 誌謝. ......................................................................................................... III 目錄. .......................................................................................................... V 圖索引 ................................................................................................... VIII 表索引 ................................................................................................... XIII 第一章 緒論 .......................................................................................... 1 1.1 前言 ............................................................................................. 1 1.2 高效率矽晶太陽能電池 ............................................................. 5 1.3 矽晶異質接合太陽能電池之光電轉換原理........................... 12 1.4 非晶矽薄膜的性質與成長機制 ............................................... 16 1.5 低溫鋁擴散原理 ....................................................................... 19 1.6研究目的與方向 ........................................................................ 22 第二章 實驗相關部分 ............................................................................ 23 2.1 實驗裝置 ................................................................................... 23 2.1-1 使用rf-PECVD系統成長本質層、p型及n型非晶矽薄膜 .......................................................................................... 23 2.1-2 使用磁控濺鍍系統成長透明導電玻璃薄膜 ............... 28 2.1-3使用磁控直流濺鍍系統成長鋁層薄膜 ........................ 30 2.1-4 使用高溫爐系統進行熱擴散製程 ............................... 32 2.2 實驗程序 ................................................................................... 33 2.2-1 矽晶基材之清洗 ........................................................... 33 2.2-2 玻璃基材的清洗 ........................................................... 35 2.2-3 異質接合太陽能電池之製作程序 ............................... 36 2.2-4 低溫鋁擴散太陽能電池之製作程序 ........................... 37 2.2-5低溫鋁擴散薄膜之製作程序 ........................................ 38 2.3 分析儀器 ................................................................................... 39 2.3-1表面形態輪廓儀 (surface profiler) ............................... 39 2.3-2 拉曼光譜儀(Raman) ..................................................... 40 2.3-3 紫外光/可見光光譜儀 (UV/VIS) ................................ 42 2.3-4 場發射掃瞄式電子顯微鏡 (field emission scanning electron microscope, FE-SEM) ...................................................... 45 2.3-5 X射線光電子能譜化學分析儀 (X-ray photoelectron spectroscopy) .................................................................... 46 2.3-6 霍爾量測儀 (Hall measurement) ................................. 47 2.3-7 電壓電流量測系統 (IV)............................................... 50 2.3-8 載子生命週期量測儀 (Lifetime tester) ....................... 51 2.3-9 太陽光模擬器 (solar simulator) ................................... 55 第三章 結果與討論 ................................................................................ 58 3.1低溫鋁擴散形成高摻雜p型膜層的製作參數 ........................ 58 3.1-1 氫化非晶矽薄膜製備時的氫氣稀釋比對形成p型層的影響 .......................................................................................... 59 3.1-2熱處理溫度對擴散層形成p形膜層的影響 ................ 69 3.1-3 鋁層厚度與熱處理時間對形成p型膜層的影響 ....... 77 3.2 低溫鋁擴散形成之p型膜層對矽晶片的鈍化效果及應用在矽晶太陽電池元件製備的特性 .................................................................. 85 3.2-1 整面之鋁擴散形成的p型膜層 ................................... 86 3.2-2 局部低溫鋁擴散形成的p型膜層 ............................. 97 第四章 結論 .......................................................................................... 102 作者簡介 ................................................................................................ 109

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