本論文以RF反應式濺鍍法製備施體-受體共摻雜n型或p型的ZnSnGaN薄膜，並探討不同摻雜比例、濺鍍功率與沉積溫度對於薄膜品質、電性及光學性質之影響。於本實驗中我們利用EDS、SEM、AFM、XRD、霍爾效應量測儀、UV-vis及TEM來分析薄膜特性。
實驗中使用Zn+Sn+Ga+GaN陶金靶，以濺鍍功率120瓦、沉積溫度400 oC並固定氬氣及氮氣流量，製備不同摻雜量之ZnxSn0.04GaN薄膜(x= 0、0.03、0.06與0.09)。實驗結果顯示薄膜皆為(10-10)優選方向之纖鋅礦結構。霍爾效應量測結果得知，當Zn摻雜量超過6 at%時，薄膜不需要經過高溫退火程序即可由n型轉變為p型半導體薄膜，最高電洞濃度為3.3x10^17 cm^-3，載子遷移率為3 cm^2^V^-1s^-1，導電率為0.16 S·cm^-1。隨著摻雜量提升，薄膜能隙會由3.12 eV下降至2.89 eV。
當改變濺鍍功率90、120與150瓦製備Zn0.06Sn0.04GaN薄膜，其沉積速率會隨著功率提高而增加，在150瓦下的濺鍍條件下製備之薄膜結晶性較佳，且電洞濃度及導電率最高，分別為5.1x10^17 cm^-3與1.1 S·cm^-1。另外，透過UV穿透光譜計算薄膜的能隙，隨著濺鍍功率增加，能隙會由3.22 eV下降至2.92 eV。
此外，本研究改變沉積溫度100 – 400 oC，探討溫度對於Zn0.06Sn0.04GaN薄膜性質之影響。隨著沉積溫度增加，結晶性會隨之提升，由電性量測結果得知，當沉積溫度為400 oC時，薄膜具有最高之載子濃度及導電率，透過UV穿透光譜計算薄膜能隙大小，隨著溫度增加薄膜能隙會有些微縮小的情形。
本研究中利用不同摻雜量之ZnxSn0.04GaN薄膜(x= 0、0.03、0.06與0.09)與Si基板堆疊製作p-n異質接面二極體，以及利用n-Zn0.03Sn0.04GaN與p-Zn0.09Sn0.04GaN在藍寶石基板上建構而成p-n同質接面二極體，並量測電流-電壓曲線，結果顯示兩種二極體元件皆具有二極體特性及整流作用。

In this research, we successfully deposited donor-acceptor co-substituted ZnSnGaN films by radio-frequency reactive sputtering technique with single cermet targets in an Ar/N2 atmosphere. ZnxSn0.04GaN (x= 0, 0.03, 0.06 and 0.09) films were deposited on Si (100) substrates at 400 oC with RF output power at 120 watt. X-ray diffraction results showed that ZnSnGaN films had a wurtzite structure with a preferential (10-10) growth plane. The film transformed into p-type conduction at x= 0.06. The highest conductivity was found to be 0.16 S·cm^-1 for the Zn0.09Sn0.04GaN film due to the high hole concentration of 3.3x10^17 cm^-3. The values of band gap for ZnxSn0.04GaN films were found in the range of 2.89 – 3.12 eV.
The comparison among Zn0.06Sn0.04GaN films deposited at various RF powers of 90, 120 and 150 W indicated that crystalline quality was improved with RF power. As power increased to 150 watt, the carrier concentration increased to 5.1x10^17 cm^-3 and conductivity was 1.1 S·cm^-1. The energy bandgap of Zn0.06Sn0.04GaN films decreased from 3.22 to 2.92 eV, as power increased from 90 to 150 watt.
When substrate temperature was increased from 100 oC to 400 oC, the crystallinity increased with temperature. The 400 oC-deposited film had the highest hole concentration and electrical conductivity. It is found that the optical band gap of the Zn0.06Sn0.04GaN films slightly decreased with increasing temperature.
In addition, the p-n junction ZnxSn0.04GaN diodes were all fabricated successfully by sputtering technique with cermet targets for p- and n-type ZnxSn0.04GaN and metal targets for electrodes. The current-voltage curves of the p-n diode tested at room temperature were performed. The I-V curves exhibited rectifying behavior. By using equations based on the standard thermionic-emission (TE) mode, the barrier height and ideality factor of the diodes were also determined.

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