InxGa1-xN系統之能隙可以由3.42eV （GaN）調變至0.7eV （InN），其能隙幾乎涵蓋了地球表面上收到的太陽光的頻譜，所以選擇氮化鎵系統半導體材料進行太陽電池之研究。
本論文主要將以模擬的方式，來分析探討不同設計或製程參數對InGaN多重量子井結構的太陽電池特性的影響。模擬使用的軟體為美國SILVACO公司開發的套裝軟體ATLAS。本文將首先對III-V族氮化物半導體材料作一簡短回顧，並對此一材料相關重要參數及物理模型做一整理。
在模擬中，我們照射固定強度的光並且設計了7種模擬，包括（1）多重量子井結構與p-i-n結構之太陽電池比較，（2）ITO透明導電層對太陽電池的影響，（3）p-GaN厚度對太陽電池的影響，（4）多重量子井層中不同銦含量對太陽電池的影響，（5）串聯電阻對太陽電池影響之分析（6）並聯電阻對太陽電池影響之分析，（7）蕭基接觸（Schottky contact）對太陽電池影響之分析。最後我們提出實驗與模擬的比較，得到相符的結果。

InxGa1-xN material system offers a very wide bandgap energy range staring from 0.7eV to 3.42eV continuously that almost covers terrestrial solar spectrum. So we select III-nitride semiconductor to do solar cell research.
　　In this thesis, we studied the influence of different design or processing on the performance of InGaN MQW solar cell by using commercial simulation program ATLAS of Silvaco Incorporation. First, we briefly introduce III-nitride semiconductor material, including some important physic models and characteristic parameters.
　　In simulation, assuming fixed standard AM1.5 solar light illumination, seven simulation experiments were carried out that included： （1）MQW structure versus p-i-n structure, （2）with and without ITO transparent conductive layer, （3）p-GaN layer thickness, （4）different In composition in InGaN quantum wells , （5） series resistance, （6） shunt resistance and （7）Schottky contact. Finally, we compared simulation with experimental results. They were consistent.

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