異質接合太陽電池的高開路電壓特性取決於是否有良好的鈍化層，本論文研究以射頻電漿輔助化學氣相沉積系統(RF-PECVD)製備本質氫化非晶氧化矽薄膜用於鈍化n型單晶矽基材，研究重點為探討本質氫化非晶氧化矽的成長條件，特別是氧組成及其鍵結特性與其在矽晶成長鈍化效果及其應用於異質接合太陽電池的元件特性關係。
在氫化非晶矽部份，主要探討氧原子源的二氧化碳流量比對成長非晶矽薄膜鈍化矽晶片的效應。藉由沉積雙面30nm厚的非晶矽薄膜鈍化矽晶片後得到最佳的有效載子生命週期高達2360μs，暗示開路電壓740mV。其中二氧化碳流量比由0.001提高到0.005時，薄膜的光學能隙由1.72eV增加到1.85eV，而對於矽晶片的鈍化效果指標參數-暗示開路電壓則由608mV躍升到740mV。最後，利用多重腔體連結式PECVD裝置製作矽晶異質接合太陽能電池，以本質氫化非晶氧化矽薄膜作為鈍化層獲得元件最佳的開路電壓為707mV，光電轉換效率達12.19%。

In this paper, we studied the passivation quality of intrinsic amorphous silicon sub-oxides (a-SiOx:H) thin layers deposited on n-type FZ Si wafers. Conventional RF plasma enhanced chemical vapor deposition (RF-PECVD) system were applied to deposit a-SiOx:H using SiH4, CO2, and H2 as the reactant gases. We investigated to effects of passivation quality of c-Si wafers sandwiched by 30-nm thick a-SiOx:H layers deposited at various CO2 partial pressures. We found that by increasing the CO2 concentration from 0.1 to 0.5% the corresponding effective carrier lifetime of Si wafers increase from 1100 to 2360s, and the implied open circuit voltage increase from 608 to 740 mV. Optical analysis of the a-SiOx:H layers showed that the addition of CO2 concentration from 0.1 to 0.5% increase the optical band gap of a-SiOx:H layers from 1.72 to 1.85eV. The application of the a-SiOx:H layer with 1.85eV band gap to the fabrication of Si heterojunction solar cells showed a high cell Voc of 707mV.

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