量子點敏化太陽能電池中，常有因量子點半導體元件在空氣中暴露時容易氧化而不利於元件之效能，如何改善此缺陷是量子點電池中重要的議題之一。
本實驗針對此原因在光電極外再包覆 ZnS、ZnSe 及 ZnS/ZnSe 寬能系的鈍化層材料使其與外界隔絕，用以減少激發電子被電解液捕獲而發生電荷重組現象。其中雖然 ZnSe 與材料間的晶格失配度優於 ZnS，但是因 ZnS 能隙大於 ZnSe，所以 ZnS 鈍化層的最佳效能為 8.40 %優於 ZnSe 的 7.85 %。為了結合兩種鈍化層的優點，將兩種鈍化層疊加，但是因為其材料之間的晶格失配度，所以我們選用先包覆 ZnSe 再包覆 ZnS 作為雙層鈍化層之條件，其效率可達 9.15 %。
為了簡化浸泡製程，我們使用 MnZnSe 量子點做為鈍化層，悉知這是第一次使用量子點做為鈍化層之應用。量子點為鈍化層應用之優點有層積方式簡單、尺寸較為均一，而且受激發時有機會提供更多的電子。根據結果，發現其效率可提升至 7.45 %。

In quantum dot sensitized solar cells, it is often unfavorable to oxidize quantum
dot semiconductor devices when exposed to air, which is one of the important issues in quantum dot cells.
For this reason, the passivation layer materials of ZnS, ZnSe and ZnS/ZnSe wide
energy systems are coated on the outside of the photoelectrode to isolate them from the surroundings. It is used to reduce the charge recombination phenomenon in which
excited electrons are trapped by the electrolyte. Although the lattice mismatch between ZnSe and the material is better than ZnS and the material, the optimum efficiency of ZnS passivation layer is 8.40% better than 7.85% of ZnSe because ZnS energy gap is larger than ZnSe. In order to combine the advantages of the two passivation layers, the two passivation layers are superimposed. Because of the lattice mismatch between the materials, we choose to coat ZnSe and then coat ZnS as the double passivation layer, and its efficiency can reach 9.15%.
In order to simplify the immersion process, we use MnZnSe quantum dots as the
passivation layer. It is known that this is the first time that quantum dots have been used as a passivation layer. The advantages of quantum dots as a passivation layer are that the layering method is simple, the size is relatively uniform, and there is an opportunity to provide more electrons when excited. According to the results, it was found that its performance can be improved to 7.45%.

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