本論文以平板式電漿輔助化學氣相沉積系統為基礎，分為兩部分：第一部份為成長低介電係數薄膜，實驗採用一矽烷偶合劑γ-glycidoxypropyl-trimethoxysilane(γ-GPS)及辛氟甲苯(C7F8)為原料先驅物，藉由添加氧氣來改變薄膜的組成，發現從沒有添加氧氣(O2/ γ-GPS流量比為0 )到O2/ γ-GPS流量比為3時，薄膜中的Si與O含量分別由3.24 %增加至34.95 %，以及13.86 %增加至49.41 %。而薄膜的介電係數(k)值，在O2/ γ-GPS流量比為2時有一最小值k=2.8。將試片經退火處理後k值皆有下降趨勢，其中O2/ γ-GPS流量比為2，經退火處理後試片k值可至2.75，經SEM及AFM觀察試片表面有微孔隙，孔隙化程度經公式估算為32.8 %，但薄膜附著力僅24牛頓。
第二部分為成長非晶矽薄膜，實驗以矽甲烷及氫氣為原料，第一階段我們將背景壓力控制在1×10-5 torr，在沈積溫度200℃、總壓100 mtorr、矽甲烷及氫氣流量比為1:20條件下，沈積出含有約4.1 %氧成分的非晶矽薄膜來，此條件的長膜在FT-IR圖譜的波數1080 cm-1處有明顯Si-O訊號。第二階段我們改變腔體設計，包括漏氣率的降低，將裝置背景壓力降低至8×10-8 torr以下，沈積出的非晶矽膜中，已降低了氧含量到XPS的量測極限以下，且在沈積溫度200℃、總壓200 mtorr、矽甲烷流量3 sccm，氫氣流量為28.5 sccm的條件下的長膜，經由拉曼散射測量得知為具體積分率72.6 %的微晶矽，並經XRD量測膜中微晶晶粒大約為23 nm。

In this thesis, we deposited low dielectric constant (low-k) and amorphous silicon films using by a parallel plate PECVD system. In depositing low-k films, we used γ-glycidoxypropyltrimethoxysilane (γ-GPS) and octafluoroluene(C7F8) as precursors, and added oxygen to change film’s composition. When O2/ γ-GPS (gas flow ratio) from 0 to 3, the atomic ratio of Si and O increase from 3.24 % to 34.95 % and 13.86 % to 49.41 %, respectively. The dielectric constant of films had a minimum 2.8 when O2/ γ-GPS ratio at 2 and was down to 2.75 after annealing. In this sample, we could see some nanoporous on film’s surface by using SEM and AFM, porosity was about 32.8 %. But film’s adhesion force was only 24 N.
In another work, we deposited amorphous silicon films on glasses using silane (SiH4) and hydrogen (H2) gas. First, we controlled back pressure at 1×10-5 torr. When substrate temperature was 200℃, working pressure was 100 mtorr and H2/ SiH4 gas flow ratio was 1/20, the amorphous silicon films had an O atomic ratio 4.1 %. The FT-IR spectra appeared S-O bonds around 1080 cm-1 clearly. Second, we reconstructed our vacuum chamber. We could control our back pressure down to 8×10-8 torr in this new chamber. And the silicon films were synthesized by this chamber had an oxygen quantity less than the XPS equipment’s limitation. The films deposited at substrate temperature 200℃, working pressure 200 mtorr, silane flow rate 3 sccm and hydrogen flow rate 28.5 sccm, had a crystalline volume fraction about 72.6 % and the crystal size is about 23 nm.

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