本研究為使用鋁金屬誘發結晶法於非晶矽薄膜中，經由加熱退火後促使非晶矽轉化成多晶矽，使用此方法之優點為可在簡易、低成本的製程中得到晶粒較大之多晶矽薄膜，其中誘發的製程若為操作在低溫下，又可稱為低溫鋁誘發非晶矽製程。
本實驗將藉由注入氫氣於射頻電漿中沉積形成氫化非晶矽，並且控制不同厚度之氫化非晶矽與退火溫度、時間等參數，達到誘發過程所需之最佳溫度與退火時間。經由拉曼光譜儀測定薄膜之結晶型態、光學顯微鏡觀察試片表面誘發結晶的轉變過程。最後成長自組裝單分子薄膜(self-assembled monolayer, SAM)於不同的界面上修飾表面之特性，經由鋁誘發結晶成多晶矽後，探討單分子薄膜對於多晶矽薄膜之影響，發現使用單分子薄膜，不僅可以增加電子遷移率和降低薄膜內部之載子濃度，再由穿透式電子顯微鏡分析存在於薄膜內部之元素分布，觀察到兩種自組裝單分子薄膜具有不同的薄膜形成發展，並進一步的探討出鋁誘發形成之多晶矽薄膜的形成機制，發現因不同的自組裝單分子薄膜有不同的多晶矽成膜堆積方式。

Polycrystalline silicon (poly-Si) thin film fabricated on transparent substrate remains challenging. Aluminum-induced crystallization is a promising process for the fabrication of polysilicon on glass substrate and it could be considered as a low temperature annealing process. Due to the low temperature annealing process, polysilicon can be used as substrates and in future, it might be expected to use in the electronics industry.
In this study, we combined the amorphous silicon that is coated on glass substrate using RF-sputtering with aluminum to transform the hydrogenated amorphous silicon into polycrystalline silicon by aluminum induced layer exchange (ALILE) process. As a result, the crystallization process temperature further decreased to the lowest temperature due to the hydrogenation amorphous silicon and we obtained the polycrystalline silicon with good crystallinity and larger grain size.
In our approach, we have used self-assembled monolayers with different functional groups to modify the surface of glass substrate to modulate the surface tension, wettability, and polarity of the substrate prior to the growth of silicon and ALILE process. The fabricated polycrystalline silicon was characterised by TEM, Raman, XRD and Hall measurement. Our finding paves a way for the fabrication of polycrystalline silicon on glass substrate with lower processing temperature and better quality of the polycrystalline silicon. Especially, the self-assembled monolayers modified glass substrate improved the mobility and crystallinity of polycrystalline silicon. Further, we are studying the mechanism of exchanging layer during the aluminum induced layer exchange crystallization process.

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