在微晶矽薄膜太陽能電池(microcrystalline silicon thin film solar cell, μc-Si)絕緣製程(isolation process)的研究範疇中，本研究探討雷射刻劃(scribing)各層薄膜的絕緣加工。本研究分別以紫外光雷射(Ultraviolet Laser)、光纖雷射(Fibre Laser)、以及飛秒雷射(Femtosecond Laser)三種雷射加工平台，透過田口品質工程以L18直交表(orthogonal array)規劃實驗，進行微晶矽薄膜太陽能電池的絕緣刻劃製程，絕緣刻劃材料有五種：氧化鋅摻雜鋁透光導電膜層(ZnO：Al, AZO)其厚度分為200奈米與500奈米兩種、厚度500奈米的微晶矽薄膜層分結晶度38%與68%兩種、厚度300奈米的鋁金屬背接觸層。
本研究探討雷射刻劃微晶矽薄膜太陽電池製程，以成功絕緣刻劃為首要目標。絕緣之後，再以最小刻劃線寬、最平整的槽狀底部、最少量的加工邊緣表面突塊為良好的加工品質。透過田口品質工程的主效果分析、變異數分析理論找出單一品質最佳參數，再利用層級分析法(analytic hierarchy process, AHP)的層級結構建立正對比矩陣，經過一致性的檢定與總權重計算，再進行重要性排序後，用以找出兼具多品質的最佳化參數，最後透過田口確認實驗與信心區間計算，驗證實驗結果。
雷射刻劃結果，依據雷射硬體極限的最小上部刻劃線寬、最大下部刻劃線寬、最少量最小突塊高度、以及最適當刻劃深度的品質特性判斷，以飛秒雷射優於光纖雷射，光纖雷射再優於紫外光雷射。刻劃結果為：AZO(200奈米)最小刻劃線寬可達16.07微米；AZO(500奈米)最小刻劃線寬17.66微米；微晶矽(結晶度38%)最小刻劃線寬24.29微米；微晶矽(結晶度68%)最小刻劃線寬29.91微米；鋁薄膜(300nm)最小線寬達11.57微米。各層的絕緣刻劃線寬愈細窄，疊合後可節省佔用太陽電池的吸收太陽光面積、轉而增加太陽電池的光致發電效益。
最後應用倒傳遞類神經結合比例共軛梯度演算法建立起預測系統，進行實驗結果的模擬，模擬實驗結果的雷射刻劃品質，品質特性為：最小上部刻劃線寬、最大下部刻劃線寬、最小突塊高度、最適當刻劃深度。經實驗驗證，本研究所建構的系統可以準確地預測微晶矽薄膜太陽能電池絕緣刻劃製程的結果。

The microcrystalline silicon thin film solar cell consists of several thin films, such as the microcrystalline silicon thin film, the aluminum-doped zinc oxide transparent conductive film, and aluminum back-contact thin films. The purpose of this research is to find the optimization parameters of making the several thin films isolated well by laser scribing. In this study, we used three laser systems, Ultraviolet Laser, Fibre Laser, and Femtosecond Laser, to examine the relation between factors of laser systems and the quality characteristics of laser isolation processing.
By using Taguchi Method, we could obtain factors and quality characteristics from following the L18 orthogonal array to set up the experiment. We defined the quality characteristics of scribing structure, such as upper width of V-cut line, lower width of V-cut line, V-cut depth, and the burrs above processing surface of microcrystalline silicon thin film. Therefore, the optimal factors combination for isolation processing of the microcrystalline silicon thin film were conducted via Taguchi Method and analytic hierarchy process theory.
The results of laser scribing microcrystalline solar cell materials are as follows: AZO(200nm) scribed a minimum line width of 16.07 micrometers, AZO(500nm) scribed a minimum line width of 17.66 micrometers, microcrystalline silicon(38% crystallinity) scribed the smallest line 24.29 micrometers wide, microcrystalline silicon(68% crystallinity) scribed a minimum line width of 29.91 micrometers, and aluminum back contact(300nm) scribed the smallest line 11.57 micrometers wide.
In additions, we can predict the results of laser isolation processing through simulation experiments by using the back propagation neural computing forecasting system. Through experimenting and computing, the error between actual value and predicted value could be converged within 2%. Finally, the results of laser isolation processing experiment were confirmed.

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