三維堆疊積體電路(3DS-IC)被認為是一項突破摩爾定律關鍵技術，由矽導孔晶圓(TSV)及玻璃導孔晶圓(TGV)作為中介層(Interposer)材料進行三維異質元件堆疊，TGV所需使用的無鹼玻璃基板亦為生醫晶片不可或缺的材料。本研究針對此具有特定功能性的晶圓進行平坦化製程研究，利用外加偏壓能量於平坦化製程中，發展一電致動力輔助化學機械平坦化系統(EKF-CMP)，透過外加偏壓於具有鑲嵌式電極拋光導電盤上產生電滲流，幫助拋光液中磨粒產生擾動，提高磨粒使用效率，並探討鑲嵌式電極間距以及拋光墊加工孔洞對於電滲流之影響，將分析結果製作專用導電盤。將銅膜晶圓以及兩款拋光液應用於EKF-CMP並比較傳統CMP，結果發現Slurry A之移除率提升36.6%，Slurry B之移除率提升64.7%。將TSV晶圓應用CMP及EKF-CMP製程後，結果發現經過EFK-CMP製程後有較快的材料移除速率，且孔洞在間距較大的MA.2區域中有較低的Dishing深度。玻璃基板於EKF-CMP製程也發現移除率提升約20%。本研究相關成果可驗證電致動力輔助化學機械平坦化製程之效益。

Three-dimensional stacking integrated circuit (3DS-IC) is considered to be a key technology to break through the limitations of Moore's law. The main technology is using the silicon or glass substrate with via which called through silicon via (TSV) and through glass via (TGV) to be interposer for stacking heterogeneous elements. The alkali glass of TGV is also an important material for biochip fabrication. This study develops an electrical kinetic-force assisted chemical mechanical planarization (EKF-CMP) for functional wafer by a designed damascene electrode on conductive plate to achieve micro area abrasive circulation of slurry. From simulation results, effect of electro-osmosis flow rate by different electrode gap can be used to design and fabricate the conductive plate for EKF-CMP. Experimental results shows that the MRR of copper blanket wafer with two kinds of slurry have been obtained by CMP and EKF-CMP tests that of material removal rate (MRR) by Slurry A can increase 36.6% and slurry B can increase 64.7% MRR of copper blanket wafer by EKF-CMP. As for the TSV pattern wafer after planarization by CMP and EKF-CMP, the MRR of EKF-CMP is faster than CMP and lower dishing in MA.2 region can be observed by EKF-CMP. For glass substrate, the MRR of glass substrate also increases 20% by EKF-CMP and the surface roughness Sa is maintained as 1.74 nm. Results of this study can verify the planarization efficiency by EKF-CMP for future application on TSV-CMP and TGV-CMP.

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