隨著半導體產業發展，三維堆疊積體電路(3DS-IC)為突破莫爾定律的關鍵技術之一，其透過中介層(Interposer)之使用進行異質元件間三維堆疊接合。目前中介層主要為矽穿孔(Through-Silicon-Via, TSV)晶圓之開發，但矽基板具備製作成本高與訊號傳遞損失等問題，目前亦朝向基板成本較低之玻璃開發玻璃穿孔(Through-Glass-Via, TGV)晶圓。因中介層具高深寬比特徵，電鍍填銅時亦間接高厚度之銅膜產生，故CMP之效率需要有效的提高，本研究設計新型三層組合式導電盤以改進電致動力輔助化學機械平坦化製程(EKF-CMP)在銅膜晶圓、玻璃晶圓與TGV晶圓之應用，透過電致動力提升拋光液中之磨粒擾動，增加磨粒之使用效率。研究方法先以COMSOL進行磨粒擾動行為模擬分析，並以最佳參數設定之導電盤面設計進行後續製程探討。實驗部分則使用銅膜晶圓、玻璃晶圓與TGV晶圓進行EKF-CMP與傳統CMP製程比較，實驗結果EKF-CMP製程於40mm×40mm銅膜晶圓可提升15%之製程效益，以八吋銅膜晶圓進行驗證其材料移除率約可提升13.6%，並進行40mm×40mm及八吋之玻璃晶圓實驗，材料移除率分別可提升7.6%及2.8%，最後導入TGV製程探討，EKF-CMP較傳統CMP可較快達製程終點，且能減少14.56%的銅膜凹陷(Dishing)程度。實驗成果可驗證本研究之EKF-CMP製程及組合式電極設計可有效提升銅膜晶圓、玻璃晶圓及TGV晶圓化學機械平坦化製程之材料移除率並降低製程缺陷。

As rapid development of semiconductor industry, 3DS-IC has been considered as a critical technology to break through Moore’s Law. The three dimensional stacking and integrating mechanism of heterogeneous element is an interposer insertion. For 3DS-IC, the Through-Silicon-Via (TSV) wafer is usually used as an interposer, however, high process cost and signal transmitted loss are the drawbacks of silicon substrate. Currently an alternative of Through-Glass-Via (TGV) wafer is potentially adopted as interposer for its better dielectric property and chemical stability. Moreover, due to high aspect ratio feature design of interposer, high copper film thickness is generated via electroplating. Therefore the efficacy of CMP is needed to be improved for 8inch application. In this study Electrical Kinetic-Force Assisted Chemical Mechanical Planarization (EKF-CMP) with three layers of novel conductive plate structures has been utilized to improve the polishing process. With the electric kinetic force, it can augment the circulation rate and efficiency of slurry during the polishing process. COMSOL Multiphysics is used to simulate the abrasive behavior of Electro osmosis Flow (EOF), then the optimal parameters from the simulation can be obtained. In the experiment, Cu blanket wafer, glass wafer, and TGV wafer with the developed EKF-CMP conductive plate have been compared with the conventional CMP. Results show that the EKF-CMP with 40×40mm Cu blanket wafer is capable to increase 15% MRR and has also been verified by 8inch Cu blanket which the results are increased to 13.6%. Additionally, for 40×40mm and 8inch glass wafer, the MRR are lifted to 7.6% and 2.8%. From the results, polishing process with TGV of EKF-CMP is not only to provide the potential to remove the material within a short time, but also to reduce 14.56% dishing as compared with that of conventional CMP. This study successfully demonstrates EKF-CMP with novel conductive plate that can augment the MRR and lessen the dishing. Further study can focus on the reaction between the slurry and pad design of TGV in EKF-CMP of TSV and TGV applications.

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