研究生: |
李奕德 Yi-De Li |
---|---|
論文名稱: |
複線式電泳反應式鑽石線鋸加工製程於單晶氧化鋁基板之研究 Study on Multi-Wire Reactive Electrophoretic Diamond Wire Sawing Process of Single-Crystalline Sapphire Wafers |
指導教授: |
陳炤彰
Chao-Chang Chen |
口試委員: |
蔡宏營
Hung-Yin Tsai 許東亞 Dong-Yea Sheu 郭俞麟 Yu-Lin Kuo 林建憲 Jian-Shian Lin 陳炤彰 Chao-Chang Chen |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 機械工程系 Department of Mechanical Engineering |
論文出版年: | 2018 |
畢業學年度: | 106 |
語文別: | 中文 |
論文頁數: | 159 |
中文關鍵詞: | 鑽石線鋸加工 、電泳沉積 、單晶氧化鋁晶圓 、搖擺式 、次表面破壞 |
外文關鍵詞: | Diamond wire sawing, Electrophoresis, Sapphire wafers, Rocking motion, Sub-surface damage |
相關次數: | 點閱:314 下載:3 |
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單晶藍寶石(Sapphire)是一種高透光性、耐高溫且高硬度的化合物半導體材料,然而也因單晶藍寶石之高硬度和化學穩定性,目前此類晶圓基板的生產大多以鑽石線鋸(Diamond Wire Sawing, DWS)作為主軸。本文研究主要藉由能與藍寶石產生固相化學反應之二氧化矽(SiO2)粉末,利用電泳沉積(Electrophoresis Deposition)方式披覆於鑽石線上,以半固定式二氧化矽反應磨料將硬質藍寶石表面轉為軟質性質,再以固定式鑽石磨料移除軟化層。本研究先行改裝實驗用單線式電泳沉積線鋸切割機(Electrophoresis Deposition Single Wire Sawing Machine, EPD-SWSM),並以此機台驗證固相化學反應之改善效益,由實驗結果顯示,單線式電泳反應式鑽石線鋸加工(Electrophoresis Deposition Single-wire Diamond Wire Sawing, EPD-SDWS)可有效改善c面藍寶石晶圓加工面Ra 約42%、Sa 約26%,且切屑形狀由顆粒狀轉為條狀,驗證加入反應效果的製程可輔助鑽石線鋸加工。接著將電泳反應式輔助製程導入實驗用複線式線鋸機台,比較在電泳反應式之輔助下搖擺機制加入的差異性,發展一套搖擺式電泳反應鑽石線鋸加工(Rocking Motion Electrophoresis Deposition Multi-wire Diamond Wire Sawing, RMEPD-MDWS),此機制可改善接觸長度而明顯提升材料移除率約26%,且更有效改善晶圓之非均勻度(N.U.)約13%,與次表面破壞深度約20%,本研究結果未來可供量產型製程研發及相關半導體材料加工之參考。
Single crystal sapphire is a highly transmissive, high temperature resistant, and high hardness brittle semiconductor material, but with a good lattice matching with GaN for solid-state illumination. Diamond Wire Sawing (DWS) is usually used in the production of single crystal sapphire wafer for LED substrates. This research aims to develpe a multi-wire reactive electrophoresis DWS and apply SiO2 particles to generate a solid-phase chemical reaction (SPCR) with sapphire and then create the deposition of SiO2 powder coating by electrophoresis deposition during the diamond wire sawing process. For process mechanism, the reacting abrasive first convert the sapphire surface into a softer reaction layer, then the softened layer can be removed by diamond grits on the diamond wire. In this study, a single-wire saw cutting machine has been modified from previous study and used to finish wire sawing of two-inch sapphire wafers to verify the solid-phase chemical reaction. Moreover, the EPD-SDWS process has been converted into an experimental multi-wire saw machine to compare the difference with rocking motion. Experimental results show that the SPCR can reduce surface roughness of as-cut sapphire wafer Sa as 26% and Ra as 42%. Also the shape of chips can be obviously changed from granular to strip type. The rocking motion assisted process can reduce the contact length by 49% and increase the material removal rate (MRR) by 29%. Moreover, surface quality and sub-surface damage can be improved. Results of this study can be future applied on development of high efficient multi-wire sawing process of related semiconductor material process.
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