LED在人們日常生活中的影響性是與日俱增，而藍寶石晶圓(Sapphire Wafer)與GaN之晶格相匹配性佳，故在LED中常使用藍寶石晶圓為磊晶鍍膜的承載板，然而由於藍寶石晶圓優異的材料機械性質，使得基板平坦化製程加工時間冗長，因此本研究中探討過氧化氫(H2O2)與單晶藍寶石晶圓的反應特性，並將此特性應用平坦化製程當中以提升平坦化製程效益。在平坦化製程的研光階段加入H2O2於鑽石液中可使藍寶石晶圓表面產生反應層，此反應層的硬度較藍寶石晶圓軟，因此應用於研光製程可較原本鑽石液提升材料移除率且減少次表層破壞，測試結果樹脂銅盤於單晶鑽石增益值為10.6 %，材料移除率可達1216 nm/min，多晶鑽石液之增益值為11.1 %，材料移除率可達1051 nm/min。樹脂銅鐵研光盤搭配單晶鑽石液之增益值為14.8 %，材料移除率可達490 nm/min，多晶鑽石液之增益值為13.6 %，材料移除率可達385 nm/min。在提升材料移除率的同時對於晶圓表面粗糙度、非均勻性以及研光盤的磨耗的表現均沒有下降的趨勢。在使用XRD對晶圓研光後品質做分析發現加入過氧化氫於研光製程所得的晶圓在次表層晶粒結晶性以及晶粒內應變有較好的表現，而在拋光製程所需時間較一般研光製程所得的晶圓要來的短，測試結果樹脂銅盤於單晶鑽石液研光後的拋光時間差異為22.2 %，於多晶鑽石液研光後的拋光時間差異為25 %，在樹脂銅鐵盤於單晶鑽石液研光後的拋光時間差異為28.5 %，於多晶鑽石液研光後的拋光時間差異為16.6 %，證明過氧化氫能有效應用於藍寶石晶圓平坦化製程。

關鍵字: 單晶藍寶石晶圓, 過氧化氫, 研光加工, 次表層破壞

The impact of LED on people’s daily life is increasing and the sapphire wafer is used as substrate of LED due to its high transparency and its well high lattice matching with GaN. However, the planarization process of sapphire wafer takes a long time owing to its high hardness. This research aims to investigate the reaction between hydrogen peroxide (H2O2) with sapphire wafer and to apply such slurry in lapping process for better efficiency. Adding H2O2 to diamond slurry in lapping process makes the sapphire wafer generating a reactive layer with lower hardness. The material removal rate (MRR) can increases and also reduces subsurface damage. Results show that the MRR of resin copper plate (RCP) with monocrystal diamond slurry (MCDS) and polycrystalline diamond slurry (PCDS) increase 10.6 % and 11.1 %, respectively. The MRR of resin copper-iron plate (RCFP) with MCDS and PCDS increase 14.8 % and 13.9 %, respectively. After lapping process, the sapphire wafer is measured with the full-width-half-maximum (FWHM) of X-ray diffraction (XRD) method to check the subsurface damage and to calculate the strain to assess the wafer quality. Results show that the wafer after lapping with H2O2 slurry has better quality and the polishing time also is shorter than that of the conventional lapping process. The reducing rate of polishing time on RCP with MCDS and PCDS are 22.2 % and 25 %, respectively and the reducing rate of RCFP with MCDS and PCDS are 28.5 % and 16 %, respectively. It proves that the hydrogen peroxide can be effectively applied on the sapphire wafer planarization process.

Keyword: Sapphire wafer, Hydrogen Peroxide, Lapping Process, Subsurface Damage

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