近年來，許多研究者紛紛投入CIGSe薄膜太陽能電池真空製程之研究，而真空製程方式極多，主要分為濺鍍與蒸鍍，本實驗使用真空濺鍍當作主要製程。
本實驗是利用不同靶材濺鍍出CIGSe薄膜，再將陶瓷CIGSe薄膜與陶金CIGSe薄膜進行不同硒源與不同溫度的退火，欲得到Cu0.9In0.7Ga0.3Se2，最後藉由將吸收層進行FE-SEM、EDS、XRD與霍爾電特性量測，探討不同組成的靶材與不同硒化條件對CIGSe薄膜的影響。將較佳之參數製備成電池元件(Ag/ITO(DC supttering，500 nm)/i-ZnO(RF sputtering，50 nm)/CdS(CBD，50 nm)/吸收層(RF sputtering，1.5 μm)/Mo(DC supttering，900nm)，利用擬太陽能光測試儀器測試其電池之光電轉換效率。
實驗結果顯示，陶瓷CIGSe薄膜於2階段600 oC下硒化後，薄膜表面型態平整且緻密，晶粒粒徑約為1-5 nm，組成接近Cu0.9In0.7Ga0.3Se2，XRD分析為CIGSe單一相；陶瓷CIGSe薄膜於2階段550 oC下硒化後，表面型態平整且緻密，晶粒粒徑約為1.5-3 μm，組成接近Cu1In0.8Ga0.2Se2，XRD分析為CIGSe單一相。將陶瓷CIGSe薄膜製成電池元件，其光電轉換效率為0.052%。

In recent years, The vacuum processes for makingCu(In,Ga)Se2
(CIGSe) solar cells thin-film solar cell are gradually getting researchers, attentions. There are many ways for vacuum processes. Evaporation and sputtering process are the most commonly used. In this experiment, we used sputtering vacuum process as our major process.
In this study, CIGSe thin film were sputtering by different targets, ceramic CIGSe thin film and cermet CIGSe thin film were followed by selenization with different Se sources and annealing temperatures. The quality of the absorption layer was analyzed by X-ray diffractometer, field-emission scanning electron microscope equipped with energy dispersive X-ray spectrometer and Hall measurement. Different targets and different conditions were studied for the effects of the CIGSe thin films .The CIGSe solar cell was constituted with the stacking form of Ag /ITO/ ZnO/ CdS/ CIGSe/Mo. The performance of the solar cells was evaluated under the standard AM1.5 illumination.
The experimental results showed that the ceramic CIGSe thin film of a grain size of 1-5 μm after two stages selenization at 600 oC had shown the best performance with dense microstructure and Composition closed Cu0.9In0.7Ga0.3Se2. On the other hand, the cermet CIGSe thin film of a grain size of 1.5-3 μm after two stages selenization at 550 oC had shown the best performance with dense microstructure and Composition closed Cu1In0.8Ga0.2Se2 .The stacked solar cells displayed the power conversion efficiencies of 0.052% .

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