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研究生： 楊孟儒
Meng-Ju Yang
論文名稱： 以濺鍍法控制方向性鉑底電極成長C軸擇優取向氮化鋁薄膜
Control of Texture of Platinum Bottom Electrode to Grow C-axis Preferentially Oriented AlN Thin Film by Sputtering
指導教授： 周賢鎧
Shyankay Jou
口試委員: 顏怡文
Yee-wen Yen
胡毅
Yi Hu
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2007
畢業學年度： 95
語文別： 中文
論文頁數： 80
中文關鍵詞： 鉑 、氮化鋁 、體聲波元件
外文關鍵詞： Pt, AlN, FBAR
相關次數： 點閱：221  下載：4 
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    • 本論文使用磁控式濺鍍法控制鉑金屬薄膜，利用濺鍍條件控制鉑電極的方向性做為氮化鋁薄膜成長的底電極基材。實驗的第一個部分是以矽基材與玻璃基材使用不同比例的氬氣與氮氣反應式濺鍍出氮化鋁薄膜。探討氮氣比例對於氮化鋁薄膜成長時方向性的影響。第二個部分是利用控制濺鍍條件製作出鉑薄膜與在濺鍍過程中通入氧氣成長PtOx先驅物薄膜，並且利用退火製程控制鉑形成具方向性的薄膜以供作為氮化鋁壓電層的底電極。第三部分則是利用具方向性的鉑底電極當基材濺鍍氮化鋁壓電薄膜。並探討此機制對於氮化鋁薄膜成長時C軸擇優取向的影響。
    由實驗結果得知，在氮氣比例占80%時，可以在矽基材與玻璃基材上濺鍍出以氮化鋁<002>方向為主的薄膜。在濺鍍鉑薄膜部分，可利用濺鍍參數搭配退火的條件達到控制鉑電極薄膜的方向性。在通入氧氣濺鍍PtOx先驅物薄膜經過退火後，並沒有辦法利用濺鍍條件有效的控制鉑電極的方向性。但在經過900℃退火後，經由四點探針量測還原過後的鉑電極可以達到最低7μΩ-cm的電阻率。最後，分別利用蒸鍍鉑基材、玻璃基材與本實驗的鉑底電極同時成長氮化鋁薄膜。可以由XRD圖發現，本實驗的鉑底電極成功的有助於氮化鋁薄膜以C軸擇優的方式沈積在基材表面，達到未來將應用在體聲波元件的目的。

    This study uses magnetron sputtering to develop platinum thin film, and utilize sputter conditions to control orientation of platinum film, which can be used as bottom electrode as well as the substrate for AlN thin film. The first part uses reactive sputtering to deposit AlN thin film on Si and glass substrate. Influence between the N2 flow rate and AlN thin film orientation is investigated. The second part uses sputtering to grow platinum and PtOx thin films with the presence of O2 gas, and uses annealing process to induce texture structure of platinum film. The third part uses texture platinum electrode as substrate and to grow AlN piezoelectric thin film with C-axis preferred orientation.
    We can get <002>-orientated AlN thin film on Si and glass substrate when the N2 gas ratio becomes 80%. In the part of sputter platinum, we can control Pt orientation by sputter conditions and anneal process. We can not control the texture when we add O2 gas to develop thin film. But subsequent annealing at 900℃ reduce the PtOx into Pt thin film with low resistivity of 7μΩ-cm. At last, we use three kinds of substrates, evaporation Pt, glass and our platinum, to grow AlN thin film. From the XRD we can find the textured platinum is useful for growing C-axis preferred orientation AlN, which is capable to be used in FBAR device in the future.

    目 錄 中文摘要.................................................Ⅰ 英文摘要.................................................Ⅱ 目錄.................................................... Ⅲ 圖目錄...................................................Ⅵ 表目錄...................................................Ⅸ 第一章 前言...............................................1 第二章 理論基礎...........................................3 2.1 壓電效應...........................................3 2.2 氮化鋁.............................................5 2.3 聲波元件簡介 ......................................8 2.4 薄膜體聲波元件種類................................11 2.5 薄膜體聲波元件的工作原理..........................13 2.6 下電極與壓電薄膜的關係............................14 2.7 鉑................................................16 2.8 電漿(Plasma).......................................16 2.9 磁控濺鍍..........................................19 2.10 射頻濺鍍..........................................20 2.11 反應性濺鍍........................................20 2.12 薄膜成長機制......................................22 2.13 薄膜晶向成長控制..................................22 第三章 實驗方法與量測....................................24 3.1 實驗材料與藥品....................................24 3.2 實驗裝置..........................................25 3.3 實驗步驟..........................................25 3.4 基材準備..........................................25 3.5 在不同基材上濺鍍氮化鋁薄膜........................25 3.6 製備方向性Pt電極..................................28 3.7 氮化鋁壓電層製作..................................28 3.8 X光繞射分析儀....................................28 3.9 場發射掃瞄式電子顯微鏡（FE-SEM）...................30 3.10 原子力顯微鏡（AFM）................................30 3.11 表面輪廓儀........................................31 3.12 四點探針..........................................31 第四章 實驗結果與討論....................................32 4.1 在不同基材上濺鍍AlN薄膜..........................32 4.2 Pt電極............................................38 4.2.1 濺鍍距離對Pt薄膜電極的影響....................38 4.2.2 退火溫度對Pt薄膜電極的影響....................41 4.2.3 不同鍍膜壓力與濺鍍功率對Pt薄膜電極的影響......43 4.3 PtOx先驅物薄膜....................................48 4.3.1 不同氧氣比例下對PtOx先驅物薄膜的影響..........48 4.3.2 改變不同濺鍍壓力與功率對PtOx先驅物薄膜的影響..54 4.4 Pt電極與PtOx先驅物薄膜特性分析....................58 4.4.1 Pt與PtOx先驅物薄膜XRD比較....................58 4.4.2 Pt與PtOx先驅物薄膜FE-SEM表面型態觀察..........62 4.4.3 Pt與PtOx先驅物薄膜表面型態觀察................65 4.4.4 Pt與PtOx先驅物薄膜四點探針量測................65 4.5 濺鍍AlN壓電層在Pt電極上..........................69 第五章 結論..............................................74 參考文獻.................................................75 圖 目 錄 圖2-1 正壓電效應.........................................4 圖2-2 逆壓電效應.........................................4 圖2-3 氮化鋁結構圖.......................................6 圖2-4 (a)LFE共振結構圖(b)HBAR理論結構圖.................9 圖2-5 表面聲波元件結構示意圖............................10 圖2-6 SMR結構示意圖...................................11 圖2-7 體微細製造之FBAR結構圖..........................12 圖2-8 表面微細製造之FBAR示意圖........................12 圖2-9 Anglient專利製程FBAR結構示意圖...................13 圖2-10 輝光放電示意圖...................................18 圖2-11 磁控濺鍍的磁力線分佈..............................19 圖2-12 反應式濺鍍示意圖..................................21 圖2-13 薄膜成長示意圖....................................23 圖3-1 基材清洗流程......................................26 圖3-2 濺鍍機示意圖......................................27 圖3-3 原子能階圖........................................29 圖3-4 布拉格繞射示意圖..................................30 圖4-1 AlN JCPDS圖......................................33 圖4-2 不同氮氣比例下濺鍍AlN薄膜XRD(a)75% (b)80% (c)90%.34 圖4-3 不同氮氣比例下氮化鋁薄膜方向性的變化圖............35 圖4-4 不同氮氣比例下AlN薄膜FE-SEM圖(a)75% (b)80% (c)90%37 圖4-5 Pt的JCPDS圖......................................39 圖4-6 Pt在不同濺鍍距離下XRD圖(a)未退火(b)退火900℃..... 40 圖4-7 不同退火溫度下Pt的XRD圖........................ 42 圖4-8 不同退火溫度下Pt<111>繞射峰的半高寬與方向性強度比.42 圖4-9 Pt電極在固定功率70W不同鍍膜壓力下退火前後XRD圖 (a)未退火(b)退火400℃(c)退火700℃(d)退火900℃ .......45 圖4-10 Pt電極在固定功率50W不同鍍膜壓力下退火前後XRD圖 (a)未退火(b)退火400℃(c)退火700℃(d)退火900℃......47 圖4-11 濺鍍PtOx先驅物薄膜在不同氧氣比例下未退火XRD圖...49 圖4-12 濺鍍PtOx先驅物薄膜在不同氧氣比例下退火900℃的XRD圖................................................49 圖4-13 PtOx先驅物薄膜在不同氧氣比例下退火前後XRD圖比較 (a) 0%O2(b) 2.5%O2(c) 5%O2(d) 7.5%O2................ 51 圖4-14 PtOx先驅物薄膜在不同氧比例不同退火溫度下XRD圖比較 (a) 2.5%O2(b) 5%O2(c) 7.5%O2........................ 53 圖4-15 PtOx先驅物薄膜經不同溫度回火後<111>方向繞射峰強度比................................................ 53 圖4-16 固定氧比例5%，濺鍍功率70W改變不同鍍膜壓力下PtOx先 驅物薄膜退火前後XRD圖(a)11mTorr (b)5mTorr..........55 圖4-17 氧比例5%，功率50W改變不同鍍膜壓力下PtOx先驅物薄膜 退火前後XRD (a)11mTorr (b)8mTorr (c)4.5mTorr.........57 圖4-18 鍍膜功率70Watt Pt<111>繞射峰強度比................. 59 圖4-19 鍍膜功率50Watt Pt<111>繞射峰強度比.................59 圖4-20濺鍍功率70W、壓力50mTorr退火900℃後XRD圖.......60 圖4-21 濺鍍功率50W、壓力2mTorr退火900℃後XRD圖.........60 圖4-22 濺鍍PtOx先驅物回火後 Pt<111>繞射峰強度比.......... 61 圖4-23 濺鍍功率50W、壓力8mTorr退火900℃後XRD圖........ 61 圖4-24 不同退火溫度下Pt電極FE-SEM表面形貌圖 (a) 未退火(b) 400℃(c) 700℃(d) 900℃................. 63 圖4-25 不同退火溫度下PtOx先驅物FE-SEM表面形貌圖 (a) 未退火(b) 400℃(c) 800℃(d) 900℃................. 64 圖4-26 Pt與PtOx在不同退火溫度下AFM表面形貌............. 66 圖4-27 Pt與PtOx利用AFM計算表面粗糙度與晶粒大小......... 67 圖4-28 Pt與PtOx利用表面輪廓儀量測表面粗糙度.............. 67 圖4-29 Pt與PtOx利用四點探針量測電極電阻率................ 68 圖4-30 在不同基材上濺鍍AlN薄膜.......................... 70 圖4-31 不同濺鍍基材下AlN壓電薄膜SEM圖 (a)濺鍍Pt電極 (b)NDL Pt基材 (c)玻璃基材.............72 圖4-32 利用退火400℃後的Pt電極為基材濺鍍AlN薄膜的XRD圖................................................73 圖4-33 濺鍍在Pt電極上的AlN壓電薄膜SEM剖面圖...........73 表 目 錄 表2-1 氮化鋁材料基礎性質.................................7 表2-2 用於聲波元件壓電材料設計參數.......................8 表2-3 金屬電極特性表....................................15 表2-4 電漿內部碰撞反應..................................18 表2-5 雙原子分子解離能比較..............................21 表4-1 不同基材AlN繞射峰強度比..........................70

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