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研究生: 王柏凱
Po-Kai Wang
論文名稱: 雷射共軛焦三維表面形貌量測儀開發應用於拋光墊之碎形維度和承載比分析
Development of 3D Confocal Laser Measurement Instrument for Polishing Pad Analysis with Fractal Dimension and Bearing Ratio Methods
指導教授: 陳炤彰
Chao-Chang A. Chen
鍾俊輝
Chun-Hui Chung
口試委員: 楊宏智
Hong-Tsu Young
張充鑫
Chung-Shin Chang
黃育熙
Yu-Hsi Huang
學位類別: 碩士
Master
系所名稱: 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年: 2013
畢業學年度: 101
語文別: 中文
論文頁數: 157
中文關鍵詞: 化學機械拋光拋光墊雷射共軛焦3D掃描承載比碎形維度
外文關鍵詞: Chemical mechanical polishing, Polishing pad, Laser confocal 3D scanning, Bearing ratio, Fractal dimension
相關次數: 點閱:659下載:23
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  • 本研究主要在建構用於化學機械平坦化拋光之拋光墊表面形貌分析,自行研發設計一款雷射共軛焦三維表面形貌掃描儀,並開發對拋光墊形貌分析之專用程式。主要方法為將雷射共軛焦儀架設於龍門線性馬達平台,回授平台X、Y位置訊號,同時以共軛焦法掃描拋光墊之表面得到形貌高度,再轉換為數位化資料,重新建構出拋光墊之3D形貌。其後將掃描所得到之數據,以承載比(Bearing Ratio)之參數建構拋光墊與拋光液之工作分層,包括儲存區(Svk)、傳輸區(Sk)、反應區(Spk),有助於分析拋光墊之工作壽命、接觸面積以及拋光液儲存能力,本法可加快對新式拋光墊之性能評比,提升拋光墊對半導體晶圓表面精密加工之平坦化效能。拋光墊之表面形貌雖呈現不規則現象,但具有自我相似的特性,本研究嘗試以碎形原理之盒子維數法(Box Method)求得拋光墊之碎形維度(Fractal Dimension),其結果顯示不同款式拋光墊有其一定範圍之維度值,且會影響藍寶石晶圓拋光之差異性。利用共軛焦掃描儀對拋光墊拋光前、後及修整後做形貌掃描,並以承載比與碎形維度做形貌分析,可提供作為藍寶石晶圓拋光加工參數之設定及拋光墊選擇評估依據。


    This study is to develop a pad profile analysis for chemical mechanical polishing (CMP) process. A 3D laser confocal measurernent system with fractal dimension and bearing ratio analysis has been developed in this study to investigate pad topography. Laser confocal measurement probe is installed on a linear motor stage, and also feedbacks the X-Y position and height signal of pad topography at the same time. Then, measurement data can be converted into 3D pad topography. In order to predict the pad life function, polishing contact area of pad asperity and slurry storage ability of pad porosity have calculated and analyzed. The bearing ratio method is defined for the working layer of pad as reservoir region (Svk), transmission region (Sk) and reaction region (Spk). Therefore, pad performance can be effectively predicted without long time experiments. The pad topography has self-similar phenomena which can be predicted by fractal dimension theory. The box method is used to calculate the fractal dimension of pads. Results show that pad has its own dimension which influences the surface profile of sapphire after polishing. Pad topography before polishing, after polishing, and dressed have been measured and calculated. The differences of fractal dimensions and bearing ratio of different pads have been obtained and discussed. Based on such pad profile analysis system, the performance of pad on wafer planarization can be potentially predicted.

    摘要… III Abstract IV 目錄… V 圖目錄 VIII 表目錄 XII 第一章 緒論 1 1.1 研究背景 1 1.2 研究動機與目的 3 1.3 研究方法 4 1.4 論文架構 5 第二章 文獻回顧 7 2.1化學機械拋光(Chemical Mechanical Polishing , CMP)原理 7 2.2拋光墊的物理與化學移除機制 10 2.3拋光墊的材質 11 第三章 雷射共軛焦量測儀與拋光墊形貌分析 17 3.1共焦與共軛焦的基本原理 17 3.1.1共軛焦掃描顯微之方法 18 3.1.2雷射共軛焦量測儀整合於線性馬達平台 22 3.2碎形維度分析法 27 3.2.1碎形幾何學 27 3.2.2碎形維度基本求法 32 3.2.3盒子維數計算法求碎形維數 34 3.2.4盒子維數實際運算方法 36 3.2.5維度大小與形貌差異之關連性 39 3.2.6 Box Method的準確性證明 40 3.3承載比分析拋光墊 42 3.3.1以承載比畫分拋光墊分層 42 3.3.2界定Spk 、Sk、 Svk範圍 43 3.3.3 流體保留機能參數分析 47 第四章 實驗設備及規劃 50 4.1拋光墊共軛焦量測系統 51 4.2量測軟體開發 56 4.2.1運動控制介面 57 4.2.2共軛焦雷射儀控制介面 58 4.2.3形貌資料處理介面 58 4.2.4承載比分析程式介紹 63 4.2.5碎形分析介面 68 4.3 晶圓拋光實驗準備 71 4.3.1 PM5精密拋光機 71 4.3.2 拋光墊選用分類 71 4.3.3研磨液 74 4.3.4鑽石修整器 74 4.3.5單晶藍寶石晶圓試片(Sapphire Wafer) 75 第五章 實驗結果與討論 77 5.1電子顯微鏡(SEM)觀察拋光墊微結構 78 5.2拋光墊的曲線碎形維度分析 81 5.3拋光墊的剖面碎形維度分析 83 5.4 拋光墊的表面積碎形維度分析 87 5.5拋光墊的體積碎形維度分析 92 5.6承載比分析結果 97 5.7總結 106 第六章 結論與建議 108 6.1結論 108 6.2建議 109 參考文獻 110 附錄… 114 附錄A ISO 25178表面性狀參數說明 114 附錄B 雷射共軛焦掃瞄儀儀器規格表 117 附錄C 各款拋光墊的曲線維度值 120 作者簡介 144

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