本研究主要是探討化學機械拋光(Chemical Mechanical Polishing, CMP )加工硬脆材料－藍寶石晶圓(Sapphire wafer)基板的加工機制，利用含有 的拋光液與基板接觸產生化學反應移除藍寶石晶圓，觀察在不同下壓力、拋光轉速和不同形貌的拋光墊、拋光粒徑及拋光液濃度對於藍寶石晶圓的移除量以及表面形貌的變化。並搭配回歸分析理論，針對Preston研磨玻璃上所提出的方程式 做出改善，並針對因拋光液體積濃度的改變造成的誤差提出補償參數Crv。最後再配以田口進行最佳化分析(ANOVA)，找出不同參數對於移除量的影響，以及在不同的參數下，表面形貌的變化。
實驗分析結果顯示給予的下壓力、轉速若越大，則移除量越多，表面有花紋的拋光墊較無花紋的拋光墊移除量多。拋光粒徑和拋光濃度方面，當粒徑越小，拋光液濃度越高，研磨晶圓的研磨顆粒較多，因此擁有較佳的移除量，並由田口最佳化分析得知，拋光液中的體積濃度和粒徑對移除量的影響較下壓力和轉速顯卓。表面形貌方面，當下壓力越大和轉速越快，表面會擁有刮痕，當拋光顆粒越小，濃度越濃，表面刮痕有增加的趨勢。藉由以上的分析結果，對於藍寶石晶圓研磨研究給予幫助。

The study mainly explores the processing mechanism of a hard and brittle material, sapphire wafer substrate by chemical mechanical polishing (CMP). A polishing fluid containing SiO2 is used to contact with substrate to produce chemical reaction for removal of sapphire wafer. The paper observes how polishing pads under different pressures, different rotational speeds of polishing and different profiles, as well as the polishing particle size and polishing fluid concentrations create changes to the removal volume and surface profile of sapphire wafer. Also using regression analysis theory, and focusing on the equation MRR = KpPV proposed for Preston polishing glass, improvement is to be made. Focusing on the error caused by the concentration change of polishing fluid, a compensation parameter, Crv is proposed. Finally, Taguchi method is adopted to carry out optimal ANOVA, acquiring the effects of different parameters on removal volume, and the change of surface profile under different parameters.
As shown from the results of experimental analysis, if the lower pressure and rotational speed are greater, the removal volume will be more. The removal volume of the polishing pad with pattern on the surface is greater than that of the polishing pad without pattern on the surface. As to polishing particle size and polishing concentration, when particle size is smaller, the concentration of polishing fluid is higher, and the quantity of polishing particles of polishing wafer is more, thus achieving better removal volume. And as known from Taguchi optimization analysis, the effects of volume concentration and particle size of polishing fluid on removal volume are more obvious than the effects of lower pressure and rotational speed. In the aspect of surface profile, when lower pressure is greater and rotational speed is faster, scratches will be formed on the surface. When the polishing particle size is smaller and the concentration of polishing fluid is denser, there is a trend that more scratches are formed on the surface. Through the above analytical results, much help is offered to the studies of sapphire wafer polishing.

[1] Anthony J. Clark, “Oxide Removal Rate Interractions between Slurry, Pad, Downforce, and Conditioning”, Rodel Inc.

[2] Wei-En Fu, Tzeng-Yow Lin, Meng-Ke Chen, Chao-Chang A.Chen ”Surface qualities after chemical-mechanical polishing on thin films”, The Solid Films,pp 4909-4915 (2009)

[3] Shengiun Zhou, Sheng Liu, ”Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching”, Applied Surface Science, pp9469-9473 (2009)

[4] J. Bai, Y.W. Zhao, Y.G. Wang, “A mathematical model for material removal and chemical-mechanical synergy in chemical-mechanical polishing at molecular scale” ScienceDirect, pp8489-8494, (2007)

[5] Kihyun park, Jiheon OH, and Haedo JEONG, “Pad Characterization and Experimental Analysis of Pad Wear Effect on Material Removal Uniformity in Chemical Mechanical Polishing” Japanese Journal of Applied Physics, Vol.47, NO. 10, pp. 7812-7817, (2008)

[6] Yongwu Zhao, L. Chang, S.H.Kim, “A mathematical model for chemical-mechanical polishing based on formation and removal of weakly bonded molecular species” Wear 254, pp332-339, (2003)

[7] H.D.Jeong, K.H. Park, K.K. Cho, “CMP Pad Break-in Time Reduction in Silicon Wafer Polishing”, Annals of the CIRP Vol. 56, pp.357-360, (2007)

[8] Honglin Zhu, Luiz A. Tessaroto, Robert Sabia, Victor A. Greenhut, Maynard Smith, Dale E. Niesz, ”Chemical mechanical polishing(CMP) anisotropy in sapphire”, Applied Surface Science 236, pp.120-130, (2004)

[9] Edward E. Remsen, Sriram Anjur, David Boldridge, Mungai Kamiti, Shoutian Li, Timothy Johns, Charles Dowell, Jaishanker Kasthurirangan, and Paul Feeney, “Analysis of Large Particle Count in Fumed Silica Slurries and Its Correlation with Scratch Defects Generated by CMP” Journal of Electrochemical Society, 153, pp453-461, (2006)

[10] Nam-Hoon Kim, Pil-Ju Ko, Gwon-Woo Choi, Yong-Jin Seo, Woo-Sun Lee, “Chemical mechanical polishing(CMP) mechanisms of thermal film after high-temperature pad conditioning”, Thin Solid Films 504, pp166-169, (2006)

[11] Yongqing Lan, Yuzhuo Li, “Case study for particle agglomeration during chemical mechanical polishing process”,

[12] Woo-Jin Lee, Hyung-Soon Park, Heon-Cheol Shin, “Enhancement of CMP pad lifetime for shallow trench isolation process using profile simulation”, Current Applied physics 9, pp134-137, (2009)

[13] K. Palanikumar, “Application of Taguchi and response surface methodologies for surface roughness in machining glass fiber reinforced plastics by PCD tooling”, Int J Adv Manuf Technol 36, pp19-27, (2008)

[14] Chijuan Li, Jingling Xiao, “The experimental study of super smooth surface processing technology for optical galss and sapphire component”, Proc. Of SPIE Vol. 5635 pp349-360

[15] Yinzhen Wang, Lingling Zhang, Shengming Zhou, Jun Xu, “Surface Treatment Effects of sapphire for High Quality Ⅲ-Nitride Film Growth”, Proc. Of SPIE Vol 5628, pp228-245

[16] Boumyoung Park, Hyunseop Lee, Kihyun Park, Hyoungjae Kim, Haedo Jeong, “Pad roughness variation and its effect on material removal profile in ceria-based CMP slurry”, Journal of Materials Processing Technology 203, pp287-292, (2008)

[17] Yongsong Xie, Bharat Bhushan, “Effects of particle size, polishing pad and contact pressure in free abrasive polishing”, Wear 200, 281-295, (1996)

[18]Hong Lei, Jianbin Luo, “CMP of hard disk substrate using a colloidal slurry: preliminary experimental invertigation”, Wear 257, pp461-470, (2004)

[19] Liu Yuling, Tan Baimei, Niu Xinhuan, Zhao Haitao, “Control technique of Sapphire roughness in CMP processing”, pp1-6

[20] 楊慶賓，「近場光學微影加工製程及非破壞方法逆解光纖探針口徑研究」，國立台灣科技大學，九十四年

[21] 王彥松，「單晶α相氧化鋁晶圓基板平坦化加工研究」，國立台灣科技大學，九十二年七月

[22] 許厲生，「矽晶圓薄化與平坦化加工研究」，國立台灣科技大學，九十六年七月

[23] 林真真，「回歸分析」，華泰書局出版，八十二年七月

[24] 劉昭宏，「非等厚塑膠光學元件收縮補償之模流分析」，國立台灣科技大學，九十四年六月

[25] 陳建中，「專利技術突破系統化分析及其應用研究」，國立台灣科技大學，九十八年七月十三日