研究生: |
翁廷維 Ting-Wei Weng |
---|---|
論文名稱: |
奈米碳管束面積對場發射特性的影響 Area Effect of Patterned Carbon Nanotube Bundle on Electron Field Emission Characteristics |
指導教授: |
李奎毅
Kuei-Yi Lee |
口試委員: |
黃鶯聲
Ying-Sheng Huang 葉文昌 Wen-chang Yeh 邱博文 Po-Wen Chiu |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2007 |
畢業學年度: | 95 |
語文別: | 英文 |
論文頁數: | 74 |
中文關鍵詞: | 電子場發射 、圖形化奈米碳管束 、奈米碳管 、化學氣相沈積 |
外文關鍵詞: | Chemical vapor deposition, Field emission display, Pattern, Carbon nanotubes |
相關次數: | 點閱:200 下載:20 |
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本實驗利用熱化學氣相沉積法成長圖形化的奈米碳管束。利用微影製程在矽基板上製作出不同半徑與不同間距的圖形化。改變不同的成長時間來控制奈米碳管束的高度。鐵當做觸媒金屬層,鋁為緩衝層。成長碳管的最佳條件為鐵薄膜厚度3 nm、鋁薄膜厚度5 nm、退火1小時和在750℃的條件下通乙炔。有論文指出當奈米碳管的間距比上奈米碳管的高度為2時,奈米碳管擁有最佳的場發射特性。在本篇論文中,奈米碳管束間距與奈米碳管束高度的比例被設定為2。改變不同的奈米碳管束面積,並討論其與場發射特性的關係。由實驗結果發現當奈米碳管束的面積佔總面積的46%時,奈米碳管陣例擁有最低的臨界電場,此臨界電場為0.7 V/um 。
Patterned carbon nanotube (CNT) bundles were fabricated using the thermal chemical vapor deposition (CVD) method. The catalyst metal layer and buffer layer were Fe and Al, respectively, for CNT bundle growth. The optimal growth conditions were found to be Fe (3 nm), Al (5 nm), annealing for 1 hr and C2H2 flowing at 750℃. Patterns of different diameters and distances were defined on Si (100) substrates using photolithography. Bundle height was controlled using different hydrocarbon flow times. The inter-bundle distance to bundle height ratio was maintained at 2, a number predicted to have a maximum field emission for CNT, and left the patterned CNT bundle area as a variable parameter. The relationship between this area and the electron field emission characteristics was studied. The lowest threshold electric field of 0.7 V/um was obtained when the total area of patterned CNT bundles was approximately 46%.
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