二維過渡金屬二硫化物在近年來備受矚目，因其半導體的特性以及身為二維材料在厚度上可以達到原子級，被業界認為具有延續摩爾定律的潛力。作為第四族過渡金屬二硫化物，二硫化鋯的研究相對於二硫化鉬、二硫化鎢等仍然較為少見，但由理論計算上也預期其發展的潛力相當大。本研究嘗試利用化學氣相沉積的方法來生長二硫化鋯薄膜，並且藉由調節二硫化鋯材料的生長參數來觀測生長參數的改變對於其最後材料成長厚度、面積及品質等影響，並在此基礎之上意圖長出更薄的二硫化鋯材料。隨後藉由拉曼、光致發光光譜、原子力顯微鏡與掃描式電子顯微鏡來分析所成長材料之光學特性以及其厚度。

Two-dimensional transition metal disulfides have attracted much attention in recent years. Due to their semiconductor properties and the thickness of twodimensional materials can reach atomic level, they are considered to have the potential to continue Moore’s law. As a group IV transition metal disulfides, the study of zirconium disulfide is still relatively rare compared with molybdenum disulfide and tungsten disulfide, but its potential is also been theoretically expected. In this study, we try to use chemical vapor deposition method to grow zirconium disulfide thin films. By adjusting the growth parameters, the influences on the thickness, area, and quality of the final material have been observed. Subsequently, the optical properties and thickness of the grown materials were analyzed by Raman, photoluminescence, atomic force microscopy, and scanning electron microscopy.

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