目前矽晶太陽能電池仍為市場主流，其中鈍化射極接觸(passivated emitter rear cell, PERC)太陽能電池，其製程簡單且能有效提升光電轉換效率，逐漸成為廠商發展高效率太陽能電池的首選。由於 PERC 太陽能電池大多在電池射極處成長氧化鋁鈍化層，本研究嘗試利用自組裝混成式化學氣相沉積系統(Hybrid Plasma CVD system)，於 P 型矽基板上成長類鑽碳膜(diamond-like-carbon, DLC)作為鈍化層，類鑽碳具堅硬、可見光與紅外光範圍透明、高電阻率特性，具有發展鈍化層潛力。藉由少數載子生命週期作為分析類鑽碳之鈍化效果，並調整參數(甲烷/氫氣流量、工作壓力、射頻電漿功率)，期望製備出高載子生命期的 DLC 鈍化層。
為了探討 DLC 鈍化層的優劣，透過鋁/類鑽碳/矽基板(MIS)結構之電容-電壓量測，輔以平帶電壓、遲滯現象與電導法分析類鑽碳膜之固定電荷、陷阱電荷、界面缺陷；暫穩態光電導量測分析表面復合速率等重要評斷鈍化層優劣之指標，另外利用電流-電壓量測來探討漏電流對復合電流之關係，並回饋修正成長參數，製備出最佳化類鑽碳鈍化層。實驗結果發現在1 torr下、甲烷/氫氣流量比10/90 sccm、RF power為150 W此參數在此研究中有最低的表面復合速率及介面缺陷密度分別為0.23 cm/s和2.25×〖10〗^10 〖eV〗^(-1) 〖cm〗^(-2)，因此載子生命期從矽裸片2.99 s提升至最高值9.85 s。

In recent years, the passivated emitter rear cell (PERC) solar cell has benefits such as easy fabrication and high conversion efficiency which demonstrate a promising cell structure of Si-based solar cells. In general, the alumina oxide was deposited on the emitter region of PERC for passivation purpose. It is well known that the DLC thin films exhibits many advantages such as high hardness, transparency in visible-light and IR-light and high resistivity etc. In this study, the diamond like carbon (DLC) thin films is tried to grow on the p-type Si substrate by combined electron-cyclotron resonance (ECR) plasma and radio-frequency (RF) plasma chemical vapor deposition (CVD), namely hybrid plasma CVD (HPCVD) system. The growth parameters of DLC thin films such as precursors flow ratio of CH4 and H2, working pressure and RF power are optimized in order to find a better passivation result.
The capacitance-voltage (C-V) measurement of samples constructed by metal Al/DLC/p-Si/metal Al are used for studied the fix-charge density, trap-center density and interface defect density of DLC passivation layer by techniques of the flat-band voltage, hysteresis behavior and conductance. The quasi steady state photoconductivity (QSSPC) is also be used for carrier lifetime measurement. In addition, the leakage current of sample structure is studied by the current-voltage (I-V) measurement. Finally, an optimized DLC passivation layer with growth conditions: working pressure of 1 torr, CH4/H2 flow ratio of 10/90 sccm, RF power of 150 W is used for achieving the lowest surface recombination rate (0.23 cm/s), interface defect density (2.25×〖10〗^10 〖eV〗^(-1) 〖cm〗^(-2)). In addition, the carrier lifetime is increased from 2.99 s for p-Si substrate to 9.85 s for DLC passivated p-Si substrate.

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