本研究乃針對藍光氮化鎵發光二極體元件的p型氮化鎵透明導電接觸層提出一取代材質及製程，考慮現在工業製程所使用的氧化銦錫薄膜中稀有元素銦的價昂，提案改使用同為透明導電氧化物的摻鎵氧化鋅來取代氧化銦錫。同時考慮使元件發光層發出的光能有效被導出元件，提案一新製程令剛鍍製好的摻鎵氧化鋅層表面呈現錐狀結構以提升光萃取效率來提高元件亮度。
實驗上設計一電漿輔助化學氣相沉積系統，採用連續式、脈衝式與遠距式不同模式的電漿導入來成長薄膜，實驗結果以二氧化碳/二乙基鋅/三乙基鎵-連續式的電漿輔助化學氣相沉積系統在基材溫度為180oC、CO2/DEZn原料比為5.9、電漿功率為3w的條件下長膜主要的擇優晶相為(100)，載子濃度為6.9x1020 cm-3，電阻率為3.09x10-3 Ω.cm，顯示鎵源確實成功摻入氧化鋅形成GZO薄膜；但薄膜表面之粗糙化仍要靠濕式蝕刻來達成。
改採用水/二乙基鋅/三乙基鎵-脈衝式電漿輔助化學氣相沉積時，發現基材溫度在180oC、H2O/DEZn原料比為2、電漿功率為15w電漿脈衝頻率80Hzduty cycle為30%時，可成長出在藍光波長區時擴散穿透率大於40%的表面粗糙化GZO薄膜來。
最後以水/二乙基鋅/三乙基鎵-遠距式電漿輔助化學氣相沉積薄膜時，基材溫度在180oC、H2O/DEZn原料比為2、電漿功率為3W條件下較利於表面(110)角錐結構薄膜的生長，惟鎵原子的摻入薄膜仍待進一步縮短遠距式電漿導入三乙基鎵氣流的滯留時間來達成。

In this project, a newly developed Ga-doped ZnO (GZO) thin layer preparation process using plasma-enhanced chemical vapor deposition technique (PECVD) was proposed. A two-step growth process was also proposed to form self-textured GZO layers. Emphasis of the study will be placed on exploring the policies to increase the light extraction efficiency in GaN based LED devices through introducing the proposed GZO layers as a contact layer with p-type GaN.
The technological background and innovation of the proposal are:
1. By using PECVD technique to form GZO, we expect an increasing in the Ga source dissociation at low temperatures which facilitates highly doped GZO films .
2. By introducing different model plasma ：continuous plasma and pulsed plasma, we expect a self-textured GZO contact layer can increase the light extraction efficiency of GaN based LED devices.

The technological goals of this project include:
1. Process design of the GZO-PECVD.
2. Evaluating the possibility to form self-textured GZO through the different plasma model.
By using CO2/DEZn/TEGa-PECVD desposit GZO film, we find temperature at 180 oC 、CO2/DEZn ratio 5.9、plasma power 3 w , the main preferred orientation of the films was (100), the films exhibited low resistivity (6.9x1020 cm-3) .
By using H2O/DEZn/TEGa-pulsed PECVD desposit GZO film, set frequency 100Hz and duty cycle 30%, we find temperature at 180 oC、H2O /DEZn ratio 2、plasma power 15 w, the films exhibited high diffused transmittance (40%) in the visible range.
By using H2O/DEZn/TEGa- remoted PECVD desposited GZO film，we find temperature at 180 oC、H2O /DEZn ratio 2、plasma power 3 w, the I(110)/I(100) ratio is better more than other plasma power.

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